IXFR 180N10
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS 247 (IXFR) OUTLINE
VDS = 10 V; ID = 90A
Note 2
60
90
S
Ciss
Coss
Crss
9400
3200
1660
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
50
90
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 90A
RG = 1 W (External),
140
65
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Qg(on)
Qgs
400
65
nC
nC
nC
Dim.
Millimeter
Min. Max. Min. Max.
Inches
VGS = 10 V, VDS = 0.5 • VDSS, ID = 90A
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Qgd
220
RthJC
RthCK
0.30 K/W
K/W
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
0.15
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
e
L
L1
5.45 BSC
19.81 20.32
3.81
.215 BSC
.780 .800
.150 .170
4.32
Symbol
TestConditions
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
IS
VGS = 0 V
180
720
A
A
S
T
U
13.21 13.72
15.75 16.26
1.65
.520 .540
.620 .640
.065 .080
ISM
Repetitive;
3.03
pulse width limited by TJM
VSD
IF = 100A, VGS = 0 V, Note 1
1.5
V
trr
250 ns
IF = 50A,-di/dt = 100 A/ms, VR = 100 V
QRM
IRM
1.1
13
mC
A
Note: 1. Pulse width limited by TJM
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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