Advance Technical Information
HiPerRFTM
IXFN 24N100F
VDSS = 1000 V
ID25
RDS(on)
=
=
24 A
0.39 Ω
Power MOSFETs
F-Class: MegaHertz Switching
D
N-Channel Enhancement Mode
t ≤ 250 ns
Avalanche Rated, Low Q Low Intrinsic R
rr
g,
g
G
High dV/dt, Low t
rr
S
S
Symbol
TestConditions
MaximumRatings
miniBLOC,SOT-227B
E153432
VDSS
VDGR
T
T
= 25°C to 150°C
1000
1000
V
V
J
J
S
= 25°C to 150°C; R = 1 MΩ
GS
G
VGS
Continuous
Transient
±20
±3
V
VGSM
0
V
S
ID25
T
= 25°C
24
A
C
D
IDM
IAR
T
= 25°C, pulse width limited by T
= 25°C
96
24
A
A
C
JM
T
C
G = Gate
S = Source
D = Drain
EAR
T
= 25°C
60
3
mJ
C
EAS
T
= 25°C
.0
J
C
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
dv/dt
I
≤ I , di/dt ≤ 100 A/µs, V ≤ V
,
10
V/ns
W
S
DM
DD
DSS
T
≤ 150°C, R = 2 Ω
J
G
PD
T
= 25°C
600
C
Features
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
l
RF capable MOSFETs
-55 ... +150
l
Double metal process for low gate
resistance
UnclampedInductiveSwitching(UIS)
rated
TJ
1.6 mm (0.63 in) from case for 10 s
-
°C
l
VISOL
50/60 Hz, RMS
≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
l
I
ISOL
Low package inductance
- easy to drive and to protect
Fast intrinsicrectifier
Md
Mountingtorque
Terminalconnectiontorque
1.5/13Nm/lb.in.
1.5/13Nm/lb.in.
l
Weight
3
0
g
Applications
l
DC-DC converters
l
Switched-modeandresonant-mode
power supplies, >500kHz switching
Symbol
TestConditions
CharacteristicValues
(T = 25°C, unless otherwise specified)
l
DC choppers
J
l
min. typ. max.
Pulsegeneration
l
Laserdrivers
VDSS
V
V
= 0 V, I = 1 mA
1000
3.0
V
V
GS
DS
D
VGH(th)
= V , I = 8 mA
5.5
Advantages
GS
D
IGSS
IDSS
V
= ±20 V , V = 0
±200 nA
GS
DC
DS
l
Easy to mount
l
V
V
= V
T = 25°C
100 µA
Space savings
mA
DS
GS
DSS
J
= 0 V
= 10 V, I = 0.5 I
D25
T = 125°C
3
l
J
High power density
RDS(on)
V
GS
D
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.39
Ω
© 2002 IXYS All rights reserved
98875 (1/02)
