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IXFK38N80Q2

型号：

IXFK38N80Q2

描述：

N沟道增强模式额定雪崩，高dv / dt ，低Q值低的固有ř[ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

606 K

下载PDF手册
HiPerFETTM  
Power MOSFETs  
Q2-Class  
VDSS  
ID25  
= 800 V  
38 A  
IXFK 38N80Q2  
IXFN 38N80Q2  
IXFX 38N80Q2  
=
RDS(on) = 220 mΩ  
trr ≤ 250 ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low Qg  
Low intrinsic Rg  
PreliminaryDataSheet  
Symbol  
TestConditions  
Maximum Ratings  
PLUS247TM (IXFX)  
VDSS  
VDGR  
T
= 25°C to 150°C  
800  
800  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D (TAB)  
D
ID25  
IDM  
IAR  
T
= 25°C  
38  
150  
38  
A
A
A
TC = 25°C, pulse width limited by TJM  
TCC = 25°C  
TO-264 AA (IX
EAR  
EAS  
T
= 25°C  
75  
4.0  
mJ  
J
TCC = 25°C  
G
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
20  
V/ns  
D (TAB)  
D
S
PD  
TC = 25°C  
735  
W
miniBLOC,SOT-227B(IXFN)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
E153432  
S*  
G
TL  
1.6mm (0.063in) from case for 10s (Plus247, TO-264) 300  
°C  
VISOL  
50/60Hz, RMS t =1 min  
ISOL < 1mA t = 1s  
SOT-227B  
2500  
3000  
V~  
V~  
S*  
I
D
Md  
Mounting torque  
Terminal torque  
TO-264  
SOT-227B  
0.9/8 Nm/lb.in.  
1.5/13 Nm/ib.in.  
* Either Source terminal can be used as  
main or Kelvin source terminal  
FC  
Mounting force  
PLUS-247 22...130/5...30 N/lb  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
Weight  
PLUS247  
TO-264  
SOT-227B  
g
10  
30  
g
g
Features  
z
Double metal process for low gate  
resistance  
International standard packages  
Epoxy meet UL 94 V-0, flammability  
classification  
Avalanche energy and current rated  
Fast intrinsic Rectifier  
Symbol  
TestConditions  
Characteristic Values  
z
z
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
z
z
VDSS  
VGS = 0 V, ID = 3mA  
VDS = VGS, ID = 8 mA  
800  
2.0  
V
V
VGS(th)  
4.5  
miniBLOC package version with  
Aluminum Nitrate isolation  
IGSS  
IDSS  
VGS = 30 VDC, VDS = 0  
200 nA  
VDS = V  
T = 25°C  
TJJ = 125°C  
50 µA  
VGS = 0DVSS  
2
mA  
Advantages  
RDS(on)  
V
= 10 V, ID = 0.5 • I  
220 mΩ  
PuGSlse test, t ≤ 300 µs,Dd2u5 ty cycle d ≤ 2 %  
z
Easy to mount  
Space savings  
High power density  
z
z
DS99150A(09/04)  
© 2004 IXYS All rights reserved  
IXFK 38N80Q2 IXFN 38N80Q2  
IXFX 38N80Q2  
Symbol  
gfs  
TestConditions  
Characteristic Values  
PLUS247TM Outline  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDS = 10 V; ID = 0.5 • ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
25  
37  
S
Ciss  
Coss  
Crss  
8340  
890  
pF  
pF  
pF  
175  
td(on)  
tr  
td(off)  
tf  
20  
16  
60  
12  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Terminals: 1-Gate  
RG = 1.0 Ω (External),  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Qg(on)  
Qgs  
190  
44  
nC  
nC  
nC  
Min. Max.  
Min. Max.  
A
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
.045 .055  
.075 .084  
.115 .123  
.024 .031  
.819 .840  
.620 .635  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A12  
Qgd  
88  
b
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
b
RthJC  
RthCK  
0.17 K/W  
K/W  
b12  
TO-264  
0.15  
C
D
E
0.61  
0.80  
20.80 21.34  
15.75 16.13  
e
5.45 BSC  
.215 BSC  
.780 .800  
.150 .170  
L
19.81 20.32  
L1  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
min.  
typ. max.  
TO-264 AA Outline  
VGS = 0 V  
38  
A
A
ISM  
VSD  
trr  
Repetitive; pulse width limited by TJM  
150  
1.5  
IF = IS, VGS = 0 V,  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
250  
ns  
IF = 25A, -di/dt = 100 A/µs, VR = 100 V  
QRM  
IRM  
1
µC  
10  
A
SOT-227BminiBLOCOutline  
Millimeter  
Dim.  
Inches  
Min. Max.  
Min.  
Max.  
A
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.202  
.114  
.083  
A1  
.100  
A2  
.079  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
c
D
E
e
0.53  
25.91  
19.81  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.033  
1.030  
.786  
5.46BSC  
.215BSC  
J
0.00  
0.25  
.000  
.010  
K
0.00  
0.25  
.000  
.010  
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
6.04  
6.30  
.238  
.248  
T
1.57  
1.83  
.062  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
oneormoreofthefollowingU.S.patents:  
IXFK 38N80Q2 IXFN 38N80Q2  
IXFX 38N80Q2  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
40  
35  
30  
25  
20  
15  
10  
5
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
7V  
V
GS  
= 10V  
8V  
7V  
6V  
6V  
5.5V  
5.5V  
5V  
5V  
7
0
0
1
2
3
4
5
6
8
9
10  
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
ºC  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
VGS = 10V  
7V  
6V  
5.5V  
5V  
ID = 38A  
ID = 19A  
0.7  
0.4  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0
2
4
6
8
10 12 14 16 18 20  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
2.8  
2.6  
2.4  
2.2  
2
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
TJ = 125ºC  
1.8  
1.6  
1.4  
1.2  
1
TJ = 25ºC  
0.8  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXFK 38N80Q2 IXFN 38N80Q2  
IXFX 38N80Q2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
70  
60  
TJ = -40ºC  
50  
25ºC  
125ºC  
40  
30  
20  
10  
0
TJ = 125ºC  
25ºC  
-40ºC  
0
3.5  
4
4.5  
5
5.5  
6
0
10  
20  
30  
40  
50  
60  
V
G S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
120  
100  
80  
60  
40  
20  
0
VDS = 400V  
D = 19A  
G = 10mA  
I
I
TJ = 125ºC  
TJ = 25ºC  
0
20 40 60 80 100 120 140 160 180 200  
0.4 0.5 0.6 0.7 0.8 0.9  
1
1.1 1.2 1.3  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
1000  
100  
10  
TJ = 150ºC  
C = 25ºC  
C
iss  
T
25µs  
100µs  
RDS(on) Limit  
C
C
oss  
1ms  
10ms  
DC  
rss  
30  
f = 1MHz  
1
0
5
10  
15  
20  
25  
35  
40  
10  
100  
VD S - Volts  
1000  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFK 38N80Q2 IXFN 38N80Q2  
IXFX 38N80Q2  
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce  
0. 18  
0. 16  
0. 14  
0. 12  
0. 10  
0. 08  
0. 06  
0. 04  
0. 02  
0. 00  
1
10  
10 0  
1 00 0  
Puls e W idth - millis ec onds  
© 2004 IXYS All rights reserved  
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