HiPerFETTM
Power MOSFETs
Q-CLASS
VDSS ID25
RDS(on)
IXFK/IXFX 48N50Q 500 V 48 A 100 mW
IXFK/IXFX 44N50Q 500 V 44 A 120 mW
trr £ 250 ns
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
High dV/dt, Low trr
Preliminary data
PLUS 247TM (IXFX)
MaximumRatings
Symbol
TestConditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
500
500
V
V
(TAB)
G
D
VGS
VGSM
Continuous
Transient
±20
±30
V
V
TO-264 AA (IXFK)
ID25
IDM
IAR
TC = 25°C
44N50
48N50
44N50
48N50
44
48
176
192
48
A
A
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
G
D
(TAB)
S
EAR
EAS
TC = 25°C
TC = 25°C
60
2.5
mJ
J
G = Gate
S = Source
D = Drain
TAB = Drain
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
Features
PD
TC = 25°C
500
W
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• Internationalstandardpackages
• Low RDS (on)
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
• Rated for unclamped Inductive load
switching (UIS) rated
Md
Mountingtorque
TO-264
0.4/6
Nm/lb.in.
Weight
PLUS 247
TO-264
6
10
g
g
• Molding epoxies meet UL94V-0
flammabilityclassification
Applications
• DC-DC converters
• Batterychargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
Symbol
VDSS
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250uA
500
2.0
V
VGS(th)
IGSS
VDS = VGS, ID = 4mA
4.0 V
• ACmotorcontrol
• Temperatureandlightingcontrols
VGS = ±20 V, VDS = 0
±100nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
100 mA
2 mA
• PLUS 247TM package for clip or spring
mounting
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
44N50
48N50
120 mW
100 mW
• Space savings
• Highpowerdensity
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98612B(7/00)
1 - 2
