找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXDN55N120D1

型号:

IXDN55N120D1

描述:

高电压IGBT与二极管可选[ High Voltage IGBT with optional Diode ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

75 K

IXDN 55N120  
IXDN 55N120 D1 IC25  
VCES  
= 1200 V  
= 100 A  
High Voltage IGBT  
with optional Diode  
VCE(sat) typ = 2.3 V  
Short Circuit SOA Capability  
Square RBSOA  
C
E
C
E
miniBLOC, SOT-227 B  
E153432  
E
G
G
G
IXDN 55N120 IXDN 55N120 D1  
E
C
E = Emitter ,  
G = Gate,  
C = Collector  
E = Emitter ●  
Symbol  
Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
Either Emitter terminal can be used as  
Main or Kelvin Emitter  
TJ = 25°C to 150°C; RGE = 20 kW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC90  
ICM  
TC = 25°C  
100  
62  
A
A
A
TC = 90°C  
TC = 90°C, tp = 1 ms  
124  
Features  
RBSOA  
VGE = ±15 V, TJ = 125°C, RG = 22 W  
Clamped inductive load, L = 30 µH  
ICM = 100  
VCEK < VCES  
A
NPT IGBT technology  
low saturation voltage  
low switching losses  
square RBSOA, no latch up  
high short circuit capability  
positive temperature coefficient for  
easy paralleling  
MOS input, voltage controlled  
tSC  
(SCSOA)  
VGE = ±15 V, VCE = VCES, TJ = 125°C  
RG = 22 W, non repetitive  
10  
µs  
PC  
TC = 25°C  
IGBT  
450  
220  
W
W
Diode  
VISOL  
50/60 Hz; IISOL £ 1 mA  
2500  
V~  
optional ultra fast diode  
International standard package  
miniBLOC  
TJ  
-40 ... +150  
-40 ... +150  
°C  
°C  
Tstg  
Advantages  
Md  
Mounting torque  
Terminal connection torque (M4)  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Space savings  
Easy to mount with 2 screws  
Weight  
30  
g
High power density  
Symbol  
Conditions  
Characteristic Values  
Typical Applications  
(TJ = 25°C, unless otherwise specified)  
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninteruptible power supplies (UPS)  
min. typ. max.  
V(BR)CES  
VGE(th)  
ICES  
VGE = 0 V  
1200  
4.5  
V
V
IC = 2 mA, VCE = VGE  
VCE = VCES  
6.5  
Switch-mode and resonant-mode  
power supplies  
TJ = 25°C  
TJ = 125°C  
3.8 mA  
mA  
6
IGES  
VCE = 0 V, VGE = ± 20 V  
IC = 55 A, VGE = 15 V  
± 500 nA  
VCE(sat)  
2.3  
2.8  
V
© 2000 IXYS All rights reserved  
1 - 4  
IXDN 55N120  
IXDN 55N120 D1  
Symbol  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
miniBLOC, SOT-227 B  
Cies  
Coes  
Cres  
3300  
500  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
220  
Qg  
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES  
240  
nC  
td(on)  
tr  
td(off)  
tf  
100  
70  
ns  
ns  
Inductive load, TJ = 125°C  
500  
70  
ns  
IC = 55 A, VGE = ±15 V,  
VCE = 600 V, RG = 22 W  
ns  
Eon  
Eoff  
8.4  
6.2  
mJ  
mJ  
M4 screws (4x) supplied  
Dim.  
Millimeter  
Inches  
RthJC  
RthCK  
0.28 K/W  
K/W  
Min.  
Max.  
Min.  
Max.  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
Package with heatsink compound  
0.1  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
E
F
4.09  
14.91  
4.29  
15.11  
0.161  
0.587  
0.169  
0.595  
G
H
30.12  
37.80  
30.30  
38.20  
1.186  
1.489  
1.193  
1.505  
Reverse Diode (FRED) [D1 version only]  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
J
K
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.481  
0.378  
L
M
0.76  
12.60  
0.84  
12.85  
0.030  
0.496  
0.033  
0.506  
Symbol  
VF  
Conditions  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
IF = 55 A, VGE = 0 V  
2.4  
1.9  
2.6  
V
V
P
Q
4.95  
26.54  
5.97  
26.90  
0.195  
1.045  
0.235  
1.059  
IF = 55 A, VGE = 0 V, TJ = 125°C  
R
S
3.94  
4.72  
4.42  
4.85  
0.155  
0.186  
0.174  
0.191  
IF  
TC = 25°C  
TC = 90°C  
110  
60  
A
A
T
U
24.59  
-0.05  
25.07  
0.1  
0.968  
-0.002  
0.987  
0.004  
V
W
3.30  
0.780  
4.57  
0.830  
0.130  
19.81  
0.180  
21.08  
IRM  
trr  
IF = 55 A, -diF/dt = 400 A/µs, VR = 600 V  
VGE = 0 V, TJ = 125°C  
40  
A
200  
ns  
trr  
IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V  
40  
ns  
RthJC  
0.6 K/W  
© 2000 IXYS All rights reserved  
2 - 4  
IXDN 55N120  
IXDN 55N120 D1  
120  
A
120  
A
VGE=17V  
15V  
TJ = 25°C  
TJ = 125°C  
VGE=17V  
100  
100  
15V  
13V  
IC  
IC  
13V  
11V  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
11V  
9V  
9V  
V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V  
0.0 0.5 1.0  
1.5 2.0 2.5 3.0  
VCE  
VCE  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
180  
120  
A
100  
VCE = 20V  
TJ = 125°C  
TJ = 25°C  
A
TJ = 25°C  
IF  
IC  
120  
90  
60  
30  
0
80  
60  
40  
20  
0
V
0
1
2
3
4
5
6
7
8
9
10  
VGE  
11 V  
VF  
Fig. 3 Typ. transfer characteristics  
Fig. 4 Typ. forward characteristics of  
free wheeling diode  
20  
120  
A
300  
VCE = 600V  
V
IC  
= 50A  
ns  
trr  
15  
IRM  
trr  
VGE  
80  
200  
10  
5
TJ = 125°C  
40  
0
100  
0
VR = 600V  
IRM  
IF = 50A  
IXDN55N120  
0
0
50  
100  
150  
200  
250  
0
200  
400  
600  
A/ s 1000  
-di/dt  
nC  
QG  
Fig. 5 Typ. turn on gate charge  
Fig. 6 Typ. turn off characteristics of  
free wheeling diode  
© 2000 IXYS All rights reserved  
3 - 4  
IXDN 55N120  
IXDN 55N120 D1  
24  
mJ  
18  
120  
ns  
12  
600  
mJ  
10  
ns  
500  
Eoff  
td(off)  
90  
60  
30  
0
Eoff  
Eon  
td(on)  
t
t
8
6
4
2
0
400  
300  
200  
100  
0
12  
6
VCE = 600V  
GE = ±15V  
tr  
VCE = 600V  
GE = ±15V  
V
V
RG = 22  
RG = 22  
TJ = 125°C  
TJ = 125°C  
Eon  
tf  
0
0
20  
40  
60  
80  
IC  
100  
A
0
20  
40  
60  
80  
100  
A
IC  
Fig. 7 Typ. turn on energy and switching  
times versus collector current  
Fig. 8 Typ. turn off energy and switching  
times versus collector current  
20  
240  
10  
mJ  
8
1500  
ns  
td(off)  
VCE = 600V  
VCE = 600V  
GE = ±15V  
td(on)  
ns  
mJ  
VGE = ±15V  
V
1200  
900  
600  
300  
0
IC = 50A  
TJ = 125°C  
IC = 50A  
Eoff  
15  
10  
5
180  
Eoff  
Eon  
Eon  
TJ = 125°C  
t
t
6
4
2
0
120  
60  
0
tr  
tf  
0
0
10 20 30 40 50 60 70 80 90 100  
RG  
0
10 20 30 40 50 60 70 80 90 100  
RG  
Fig. 9 Typ. turn on energy and switching  
times versus gate resistor  
Fig.10 Typ. turn off energy and switching  
times versus gate resistor  
120  
A
1
K/W  
0.1  
100  
ICM  
ZthJC  
0.01  
80  
60  
40  
20  
0
diode  
IGBT  
RG = 22  
TJ = 125°C  
VCEK < VCES  
0.001  
0.0001  
single pulse  
IXDN55N120  
0.00001  
0.00001 0.0001  
0.001  
0.01  
0.1  
1
s
0
200 400 600 800 1000 1200 V  
VCE  
t
Fig. 11 Reverse biased safe operating area  
RBSOA  
Fig. 12 Typ. transient thermal impedance  
© 2000 IXYS All rights reserved  
4 - 4  
厂商 型号 描述 页数 下载

IXYS

IXD1201P341PR-G [ Fixed Positive Standard Regulator ] 22 页

IXYS

IXD1201P412PR-G [ Fixed Positive Standard Regulator ] 22 页

IXYS

IXD1201P422PR-G [ Fixed Positive Standard Regulator ] 22 页

IXYS

IXD1201P442PR-G [ Fixed Positive Standard Regulator ] 22 页

IXYS

IXD1201P571DR-G [ Fixed Positive Standard Regulator ] 22 页

IXYS

IXD1201P571MR-G [ Fixed Positive Standard Regulator ] 22 页

IXYS

IXD1201P592MR [ Fixed Positive Standard Regulator ] 22 页

IXYS

IXD1201T222DR [ Fixed Positive Standard Regulator ] 22 页

IXYS

IXD1201T312MR [ Fixed Positive Standard Regulator ] 22 页

IXYS

IXD1201T312MR-G [ Fixed Positive Standard Regulator ] 22 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.180167s