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IXDN75N120

型号:

IXDN75N120

描述:

高压IGBT[ High Voltage IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

75 K

IXDN 75N120 VCES  
IC25  
= 1200 V  
= 150 A  
High Voltage IGBT  
VCE(sat) typ = 2.2 V  
Short Circuit SOA Capability  
Square RBSOA  
C
E
miniBLOC, SOT-227 B  
E153432  
E
G
G
E
E
C
E = Emitter ,  
G = Gate,  
C = Collector  
E = Emitter ●  
Symbol  
Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
Either Emitter terminal can be used as  
Main or Kelvin Emitter  
TJ = 25°C to 150°C; RGE = 20 kW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC90  
ICM  
TC = 25°C  
150  
95  
A
A
A
Features  
TC = 90°C  
TC = 90°C, tp = 1 ms  
190  
NPT IGBT technology  
low saturation voltage  
low switching losses  
square RBSOA, no latch up  
high short circuit capability  
positive temperature coefficient for  
RBSOA  
VGE = ±15 V, TJ = 125°C, RG = 15 W  
Clamped inductive load, L = 30 µH  
ICM = 150  
VCEK < VCES  
A
tSC  
(SCSOA)  
VGE = ±15 V, VCE = VCES, TJ = 125°C  
RG = 15 W, non repetitive  
10  
µs  
easy paralleling  
PC  
TC = 25°C  
IGBT  
660  
W
MOS input, voltage controlled  
International standard package  
miniBLOC  
VISOL  
50/60 Hz; IISOL £ 1 mA  
2500  
V~  
TJ  
-40 ... +150  
-40 ... +150  
°C  
°C  
Tstg  
Advantages  
Md  
Mounting torque  
Terminal connection torque (M4)  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Space savings  
Easy to mount with 2 screws  
High power density  
Weight  
30  
g
Typical Applications  
Symbol  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninteruptible power supplies (UPS)  
min. typ. max.  
V(BR)CES  
VGE(th)  
ICES  
VGE = 0 V  
1200  
4.5  
V
V
Switch-mode and resonant-mode  
IC = 3 mA, VCE = VGE  
VCE = VCES  
6.5  
power supplies  
TJ = 25°C  
TJ = 125°C  
4 mA  
mA  
6
IGES  
VCE = 0 V, VGE = ± 20 V  
IC = 75 A, VGE = 15 V  
± 500 nA  
VCE(sat)  
2.2  
2.7  
V
© 2000 IXYS All rights reserved  
1 - 4  
IXDN 75N120  
Symbol  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
miniBLOC, SOT-227 B  
Cies  
Coes  
Cres  
5500  
750  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
330  
Qg  
IC = 75 A, VGE = 15 V, VCE = 0.5 VCES  
360  
nC  
td(on)  
tr  
td(off)  
tf  
100  
50  
ns  
ns  
Inductive load, TJ = 125°C  
650  
50  
ns  
IC = 75 A, VGE = ±15 V,  
ns  
VCE = 600 V, RG = 15 W  
Eon  
Eoff  
12.1  
10.5  
mJ  
mJ  
M4 screws (4x) supplied  
Dim.  
Millimeter  
Inches  
RthJC  
RthCK  
0.19 K/W  
K/W  
Min.  
Max.  
Min.  
Max.  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
Package with heatsink compound  
0.1  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
E
F
4.09  
14.91  
4.29  
15.11  
0.161  
0.587  
0.169  
0.595  
G
H
30.12  
37.80  
30.30  
38.20  
1.186  
1.489  
1.193  
1.505  
J
K
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.481  
0.378  
L
M
0.76  
12.60  
0.84  
12.85  
0.030  
0.496  
0.033  
0.506  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
P
Q
4.95  
26.54  
5.97  
26.90  
0.195  
1.045  
0.235  
1.059  
R
S
3.94  
4.72  
4.42  
4.85  
0.155  
0.186  
0.174  
0.191  
T
U
24.59  
-0.05  
25.07  
0.1  
0.968  
-0.002  
0.987  
0.004  
V
W
3.30  
0.780  
4.57  
0.830  
0.130  
19.81  
0.180  
21.08  
© 2000 IXYS All rights reserved  
2 - 4  
IXDN 75N120  
175  
175  
VGE=17V  
15V  
VGE=17V  
15V  
TJ = 25°C  
TJ = 125°C  
A
A
13V  
11V  
13V  
11V  
IC  
IC  
125  
100  
75  
50  
25  
0
125  
100  
75  
50  
25  
0
9V  
9V  
V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V  
0.0 0.5 1.0  
1.5 2.0 2.5 3.0  
VCE  
VCE  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
150  
A
100  
75  
VCE = 20V  
TJ = 25°C  
IC  
50  
25  
0
5
6
7
8
9
10  
VGE  
11 V  
Fig. 3 Typ. transfer characteristics  
20  
V
VCE = 600V  
IC = 75A  
15  
10  
5
VGE  
IXDN75N120  
0
nC  
0
100  
200  
300  
400  
QG  
Fig. 4 Typ. turn on gate charge  
© 2000 IXYS All rights reserved  
3 - 4  
IXDN 75N120  
40  
160  
20  
800  
Eoff  
mJ  
mJ  
ns  
ns  
Eon  
td(off)  
30  
20  
10  
0
120  
15  
10  
5
600  
Eoff  
Eon  
td(on)  
t
t
tr  
80  
40  
0
400  
VCE = 600V  
V
GE = ±15V  
VCE = 600V  
VGE = ±15V  
R
G = 15  
200  
0
TJ = 125°C  
R
G = 15  
TJ = 125°C  
tf  
0
0
50  
100  
150  
A
0
50  
100  
150 A  
IC  
IC  
Fig. 5 Typ. turn on energy and switching  
times versus collector current  
Fig. 6 Typ. turn off energy and switching  
times versus collector current  
200  
2000  
25  
mJ  
20  
25  
td(on)  
VCE = 600V  
VCE = 600V  
VGE = ±15V  
IC = 75A  
TJ = 125°C  
mJ  
ns  
ns  
VGE = ±15V  
td(off)  
Eon  
160  
120  
80  
40  
0
20  
15  
10  
5
1600  
IC = 75A  
Eoff  
Eon  
TJ = 125°C  
t
t
15  
10  
5
1200  
800  
400  
0
Eoff  
tr  
tf  
0
0
0
8
16  
24  
32  
40  
48  
56  
0
8
16  
24  
32  
40  
48  
56  
RG  
RG  
Fig. 7 Typ. turn on energy and switching  
times versus gate resistor  
Fig.8 Typ. turn off energy and switching  
times versus gate resistor  
200  
A
1
K/W  
0.1  
150  
ZthJC  
ICM  
0.01  
RG = 15  
100  
50  
0
TJ = 125°C  
VCEK < VCES  
0.001  
0.0001  
single pulse  
IXDN75N120  
0.00001  
0.00001 0.0001  
0.001  
0.01  
0.1  
1
V
s
0
200 400 600 800 1000 1200  
VCE  
t
Fig. 9 Reverse biased safe operating area  
RBSOA  
Fig. 10 Typ. transient thermal impedance  
© 2000 IXYS All rights reserved  
4 - 4  
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