IXDH 20N120
IXDH 20N120 D1 IC25
VCES
= 1200 V
= 38 A
High Voltage IGBT
with optional Diode
VCE(sat) typ = 2.4 V
Short Circuit SOA Capability
Square RBSOA
C
E
C
E
TO-247 AD
G
G
G
C
E
C (TAB)
G = Gate,
C = Collector ,
E = Emitter
TAB = Collector
IXDH 20N120 IXDH 20N120 D1
Symbol
Conditions
Maximum Ratings
Features
●
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard package
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
V
●
●
●
●
●
TJ = 25°C to 150°C; RGE = 20 kW
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC90
ICM
TC = 25°C
38
25
50
A
A
A
●
●
●
TC = 90°C
TC = 90°C, tp = 1 ms
RBSOA
VGE = ±15 V, TJ = 125°C, RG = 82 W
ICM = 35
A
Clamped inductive load, L = 30 µH
VCEK < VCES
Advantages
tSC
(SCSOA)
VGE = ±15 V, VCE = VCES, TJ = 125°C
RG = 82 W, non repetitive
10
µs
●
Space savings
High power density
●
PC
TC = 25°C
IGBT
Diode
200
75
W
W
Typical Applications
TJ
-55 ... +150
-55 ... +150
300
°C
°C
°C
●
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Tstg
●
●
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
●
●
Switch-mode and resonant-mode
Md
Mounting torque
0.8 - 1.2
6
Nm
g
power supplies
Weight
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V(BR)CES
VGE(th)
ICES
VGE = 0 V
1200
4.5
V
V
IC = 0.6 mA, VCE = VGE
6.5
VCE = VCES
TJ = 25°C
TJ = 125°C
1 mA
mA
2
IGES
VCE = 0 V, VGE = ±20 V
IC = 20 A, VGE = 15 V
± 500 nA
VCE(sat)
2.4
3
V
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