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IXBH9N160G

型号:

IXBH9N160G

描述:

高压BIMOSFET单片双极型晶体管MOS[ High Voltage BIMOSFET Monolithic Bipolar MOS Transistor ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

66 K

HighVoltage BIMOSFETTM  
Monolithic Bipolar  
MOSTransistor  
IXBH 9N140G VCES = 1400/1600V  
IXBH 9N160G IC25 = 9 A  
VCE(sat) = 4.9 V typ.  
tfi  
= 70 ns  
N-Channel, Enhancement Mode  
MOSFET compatible  
C
E
TO-247 AD  
G
G
C
C (TAB)  
E
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
Preliminary Data  
Symbol  
Conditions  
Maximum Ratings  
9N140G 9N160G  
Features  
• High Voltage BIMOSFETTM  
- replaces high voltage Darlingtons  
and series connected MOSFETs  
- lower effective RDS(on)  
• MOS Gate turn-on  
- drive simplicity  
VCES  
VCGR  
TJ = 25°C to 150°C  
1400  
1400  
1600  
1600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
V
V
±30  
- MOSFET compatible for 10V  
turn on gate voltage  
IC25  
IC90  
ICM  
TC = 25°C,  
9
5
A
A
A
TC = 90°C  
• Monolithic construction  
- high blocking voltage capability  
- very fast turn-off characteristics  
• International standard package  
JEDEC TO-247 AD  
TC = 25°C, 1 ms  
10  
SSOA  
(RBSOA)  
VGE= 10 V, TVJ = 125°C, RG = 27 VCE = 0.8•VCES ICM = 12  
Clamped inductive load, L = 100 µH  
A
C4  
• Reverse conducting capability  
PC  
TC = 25°C  
100  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
°C  
TJM  
Tstg  
TL  
Applications  
-55 ... +150  
300  
• Flyback converters  
• DC choppers  
1.6 mm (0.063 in) from case for 10 s  
Mounting torque  
• Uninterruptiblepowersupplies(UPS)  
• Switched-modeandresonant-mode  
powersupplies  
Md  
1.15/10 Nm/lb.in.  
Weight  
6
g
• CRTdeflection  
• Lampballasts  
Symbol  
BVCES  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Advantages  
IC = 0.25 mA, VGE = 0 V 9N140G  
9N160G  
1400  
1600  
V
V
• Easy to mount with 1 screw  
(isolatedmountingscrewhole)  
• Space savings  
VGE(th)  
ICES  
IC = 0.5 mA, VCE = VGE  
3.5  
5.5  
V
• High power density  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
100 µA  
0.1  
mA  
IGES  
VCE = 0 V, VGE = ±20 V  
± 500 nA  
VCE(sat)  
IC = IC90, VGE = 15 V  
4.9  
5.6  
7
V
V
TJ = 125°C  
© 2000 IXYS All rights reserved  
IXYS Semiconductor GmbH  
1 - 4  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  
IXBH 9N140G  
IXBH 9N160G  
Symbol  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
Cies  
Coes  
Cres  
550  
36  
5
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
IC = 5 A, VCE = 600 V, VGE = 10 V  
34  
nC  
td(on)  
tri  
td(off)  
tfi  
140  
200  
120  
70  
ns  
ns  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 10 V, L = 100 µH,  
VCE = 960 V, RG = 27 Ω  
Dim. Millimeter  
Min. Max.  
Inches  
Min. Max.  
RthJC  
RthCK  
1.25 K/W  
K/W  
0.25  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
E
F
4.32 5.49 0.170 0.216  
5.4  
6.2 0.212 0.244  
Reverse Conduction  
Symbol  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
J
K
1.0  
1.4 0.040 0.055  
Conditions  
min. typ. max.  
10.8 11.0 0.426 0.433  
VF  
IF = IC90, VGE = 0 V  
3.6  
5
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
N
1.5 2.49 0.087 0.102  
C4  
© 2000 IXYS All rights reserved  
2 - 4  
IXBH 9N140G  
IXBH 9N160G  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
VGE = 17V  
TJ = 25°C  
TJ = 125°C  
15V  
15V  
13V  
VGE = 17V  
11V  
13V  
11V  
9V  
9V  
7V  
7V  
0
0
0
2
4
6
8
10 12 14 16 18  
0
2
4
6
8
10 12 14 16 18  
VCE - Volts  
VCE - Volts  
Fig. 1 Typ. Output Characteristics  
Fig. 2 Typ. Output Characteristics  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
VCE = 20V  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
C4  
0
0
0
2
4
6
8
10  
4
6
8
10  
12  
14  
VGE - Volts  
VF - Volts  
Fig. 3 Typ. Transfer Characteristics  
Fig. 4 Typ. Characteristics of Reverse  
Conduction  
16  
14  
12  
10  
8
15  
10  
5
VCE = 600V  
IC = 5A  
TJ = 125°C  
VCEK < VCES  
6
IXBH 9N140G  
IXBH 9N160G  
4
2
0
0
0
10  
20  
30  
40  
50  
0
400  
800  
VCE - Volts  
1200  
1600  
QG - nanocoulombs  
Fig. 5 Typ. Gate Charge characteristics  
Fig. 6 ReverseBiased Safe Operating Area  
RBSOA  
© 2000 IXYS All rights reserved  
3 - 4  
IXBH 9N140G  
IXBH 9N160G  
140  
120  
100  
80  
250  
200  
150  
100  
50  
VCE = 960V  
VGE = 10V  
VCE = 960V  
VGE = 10V  
RG = 27Ω  
TJ = 125°C  
IC  
=
5A  
TJ = 125°C  
60  
40  
0
0
2
4
6
8
10 12 14 16  
0
10  
20  
30  
40  
50  
60  
IC - Amperes  
Rg - Ohms  
Fig. 7 Typ. Fall Time  
Fig. 8 Typ. Turn Off Delay Time  
10  
1
0.1  
Single Pulse  
0.01  
0.001  
C4  
IXBH 9-140/160G  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
Fig. 9 Typ. Transient Thermal Impedance  
© 2000 IXYS All rights reserved  
4 - 4  
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