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IXFA12N80P

型号:

IXFA12N80P

品牌:

IXYS[ IXYS CORPORATION ]

页数:

5 页

PDF大小:

123 K

PolarHVTM HiPerFET  
Power MOSFET  
IXFA 12N80P  
IXFH 12N80P  
IXFP 12N80P  
VDSS = 800 V  
ID25 12 A  
=
RDS(on) 1.1 Ω  
trr  
250 ns  
N-Channel Enhancement Mode  
TO-263 (IXFA)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
G
S
VGS  
Continuous  
Tranisent  
20  
30  
V
V
(TAB)  
VGSM  
ID25  
IDM  
TC = 25°C  
12  
36  
A
A
TO-247 (IXFH)  
TC = 25°C, pulse width limited by TJM  
IAR  
TC = 25°C  
12  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
1.2  
(TAB)  
dv/dt  
PD  
IS IDM, di/dt 100 A/μs, VDD VDSS  
TJ 150°C, RG = 4 Ω  
,
10  
V/ns  
TO-220 (IXFP)  
TC = 25°C  
360  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
(TAB)  
G
D
S
TL  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
250  
°C  
°C  
Md  
Mounting torque  
(TO-220, TO-247)  
1.13/10 Nm/lb.in.  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
Weight  
TO-247  
T0-220 & TO-263  
6
4
g
g
Features  
Symbol  
Test Conditions  
Characteristic Values  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 4 mA  
VGS = 30 VDC, VDS = 0  
800  
V
V
3.0  
5.0  
100  
nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
μA  
μA  
TJ = 125°C  
z
Easy to mount  
Space savings  
z
RDS(on)  
VGS = 10 V, ID = 0.5 ID25 , Note 1  
1.1  
Ω
z
High power density  
DS99476E(10/05)  
© 2005 IXYS All rights reserved  
IXFA 12N80P  
IXFH 12N80P IXFP 12N80P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
TO-263 (IXFA) Outline  
(TJ = 25°C unless otherwise specified)  
Min. Typ. Max.  
VDS = 20 V; ID = 0.5 ID25, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
13  
18  
S
Ciss  
Coss  
Crss  
2800  
210  
19  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
21  
22  
62  
22  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 5 Ω (External)  
Pins: 1 - Gate 2, 4 - Drain  
3 - Source  
Qg(on)  
Qgs  
51  
13  
19  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Min.  
Max.  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
Qgd  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
RthJC  
RthCK  
0.35 K/W  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
(TO-247)  
(TO-220)  
0.21  
0.25  
K/W  
K/W  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100 BSC  
.405  
.320  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
Symbol  
IS  
Test Conditions  
VGS = 0 V  
12  
36  
A
R
0.46  
0.74  
.018  
.029  
ISM  
Repetitive  
A
V
TO-220 (IXFP) Outline  
VSD  
IF = IS, VGS = 0 V, Note 1  
1.5  
250  
trr  
IS = 18 A, VGS = 0 V  
200  
1.0  
ns  
Qrm  
-di/dt = 100 A/μs, VR = 100 V  
μC  
Note 1: Pulse test, t 300 μs, duty cycle d 2 %  
TO-247 (IXFH) Outline  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min.  
Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185  
.087  
.059  
.209  
.102  
.098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040  
.065  
.113  
.055  
.084  
.123  
Terminals:  
1 - Gate  
2 - Drain  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
1
2
3
3 - Source  
Tab - Drain  
C
D
E
.4  
20.80  
15.75  
.8  
21.46  
16.26  
.016  
.819  
.610  
.031  
.845  
.640  
e
L
L1  
5.20  
19.81  
5.72  
20.32  
4.50  
0.205 0.225  
.780  
.800  
.177  
P  
Q
3.55  
5.89  
3.65  
6.40  
.140  
0.232 0.252  
.144  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFA 12N80P  
IXFH 12N80P IXFP 12N80P  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25  
º
C
@ 25 C  
º
12  
10  
8
24  
20  
16  
12  
8
V
= 10V  
7V  
GS  
V
= 10V  
GS  
7V  
6V  
6
6V  
5V  
4
4
2
5V  
8
0
0
0
3
6
9
12 15 18 21 24 27 30  
0
2
4
6
10  
12  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Norm alized to 0.5 ID25  
)
º
C
Value vs. Junction Tem perature  
12  
10  
8
2.6  
2.4  
2.2  
2
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
1.8  
1.6  
1.4  
1.2  
1
6
I
= 12A  
D
4
I
= 6A  
D
2
5V  
0.8  
0.6  
0
0
4
8
12  
16  
20  
24  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case  
Tem perature  
Fig. 5. RDS(on) Norm alized to  
0.5 ID25 Value vs. ID  
2.5  
2.3  
2.1  
1.9  
1.7  
1.5  
1.3  
1.1  
0.9  
14  
12  
10  
8
V
= 10V  
GS  
º
T = 125 C  
J
6
4
º
T = 25 C  
J
2
0
0
2
4
6
8
10 12 14 16 18 20 22 24  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2005 IXYS All rights reserved  
IXFA 12N80P  
IXFH 12N80P IXFP 12N80P  
Fig. 8. Transconductance  
Fig. 7. Input Adm ittance  
16  
14  
12  
10  
8
24  
21  
18  
15  
12  
9
º
TJ = -40 C  
º
25 C  
º
125 C  
º
= 125 C  
T
J
º
25 C  
6
º
-40 C  
6
4
3
2
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
4
4.5  
5
5.5  
6
6.5  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
35  
30  
25  
20  
15  
10  
5
V
= 400V  
DS  
I
I
= 6A  
D
G
= 10mA  
º
T = 125 C  
J
º
T = 25 C  
J
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
5
10 15 20 25 30 35 40 45 50 55  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 11. Capacitance  
10000  
1000  
100  
f = 1MHz  
C
C
iss  
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFA 12N80P  
IXFH 12N80P IXFP 12N80P  
Fig. 12. Maximum Transient Thermal Resistance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2005 IXYS All rights reserved  
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