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IXFR38N80Q2

型号：

IXFR38N80Q2

描述：

电气隔离返回地面[ Electrically Isolated Back Surface ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

569 K

下载PDF手册
HiPerFETTM  
MOSFET  
Q2-Class  
VDSS  
ID25  
= 800 V  
28 A  
IXFR 38N80Q2  
=
RDS(on) = 240 mΩ  
trr ≤ 250 ns  
(Electrically Isolated Back Surface)  
PreliminaryDataSheet  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS247 (IXFR)  
VDSS  
VDGR  
T
= 25°C to 150°C  
800  
800  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
IAR  
T
= 25°C  
28  
150  
38  
A
A
A
TC = 25°C, pulse width limited by TJM  
G
ack  
Surface  
D
TCC = 25°C  
EAR  
EAS  
T
= 25°C  
75  
4.0  
mJ  
J
TCC = 25°C  
G = Gate  
S = Source  
D = Drain  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
20  
V/ns  
Features  
PD  
TC = 25°C  
416  
W
z
Double metal process for low gate  
resistance  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
Silicon chip on DCB substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Epoxy meet UL 94 V-0, flammability  
classification  
TL  
1.6 mm (0.063 in) from case for 10 s  
50/60 Hz, RMS, t = 1 min  
300  
°C  
z
VISOL  
2500  
3000  
V~  
V~  
I
SOL = 1mA, t = 1 s  
z
z
Avalanche energy and current rated  
Fast intrinsic Rectifier  
FC  
Mounting Force  
Weight  
5
g
Advantages  
z
Easy assembly  
Space savings  
High power density  
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
VDSS  
VGS = 0 V, ID = 3mA  
VDS = VGS, ID = 8 mA  
800  
2.0  
V
V
VGS(th)  
4.5  
IGSS  
IDSS  
VGS = 30 VDC, VDS = 0  
200 nA  
VDS = V  
T = 25°C  
TJJ = 125°C  
50 µA  
VGS = 0 DVSS  
2
mA  
RDS(on)  
V
= 10 V, ID = I  
240 mΩ  
PGuSlse test, t ≤ 30T0 µs, duty cycle d ≤ 2 %  
DS99203(09/04)  
© 2004 IXYS All rights reserved  
50  
IXFR 38N80Q2  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS247 Outline  
VDS = 10 V; ID = IT, pulse test  
25  
37  
S
Ciss  
Coss  
Crss  
8340  
890  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
175  
td(on)  
tr  
td(off)  
tf  
20  
16  
60  
12  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT  
RG = 1.0 Ω (External),  
Qg(on)  
Qgs  
190  
44  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT  
Qgd  
88  
RthJC  
RthCK  
0.3 K/W  
K/W  
0.15  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
min.  
typ. max.  
VGS = 0 V  
38  
A
A
ISM  
VSD  
trr  
Repetitive; pulse width limited by TJM  
150  
1.5  
IF = IS, VGS = 0 V,  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
250  
ns  
IF = 25A, -di/dt = 100 A/µs, VR = 100 V  
QRM  
1
µC  
IRM  
10  
A
Notes: 1. Test current IT = 19A  
2. See IXFK38N80Q2 data sheet for  
characteristic curves  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXFR 38N80Q2  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
40  
35  
30  
25  
20  
15  
10  
5
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
7V  
V
GS  
= 10V  
8V  
7V  
6V  
6V  
5.5V  
5.5V  
5V  
5V  
7
0
0
1
2
3
4
5
6
8
9
10  
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
ºC  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
VGS = 10V  
7V  
6V  
5.5V  
5V  
ID = 38A  
ID = 19A  
0.7  
0.4  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0
2
4
6
8
10 12 14 16 18 20  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
30  
27  
24  
21  
18  
15  
12  
9
2.8  
2.6  
2.4  
2.2  
2
VGS = 10V  
TJ = 125ºC  
1.8  
1.6  
1.4  
1.2  
1
TJ = 25ºC  
6
3
0.8  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXFR 38N80Q2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
-40ºC  
0
3.5  
4
4.5  
5
5.5  
6
0
10  
20  
30  
40  
50  
60  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
120  
100  
80  
60  
40  
20  
0
VDS = 400V  
D = 19A  
IG = 10mA  
I
TJ = 125ºC  
TJ = 25ºC  
0
20 40 60 80 100 120 140 160 180 200  
0.4 0.5 0.6 0.7 0.8 0.9  
1
1.1 1.2 1.3  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
1000  
100  
10  
TJ = 150ºC  
C
iss  
T
C = 25ºC  
25µs  
100µs  
1ms  
10ms  
C
C
oss  
RDS(on) Limit  
rss  
30  
DC  
f = 1MHz  
1
0
5
10  
15  
20  
25  
35  
40  
10  
100  
VD S - Volts  
1000  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFR 38N80Q2  
Fig. 13. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
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