IXFH 26N50Q IXFQ 26N50Q
IXFT 26N50Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 Outline
VDS = 10 V; ID = 0.5 • ID25, Note 2
14
24
S
Ciss
Coss
Crss
3900
500
pF
pF
pF
1
2
3
Terminals:
1 - Gate
VGS = 0 V, VDS = 25 V, f = 1 MHz
2 - Drain
3 - Source
Tab - Drain
130
td(on)
tr
td(off)
tf
28
30
55
16
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 Ω (External),
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A12
4.7
2.2
2.2
1.0
1.65
2.87
5.3
2.54
2.6
1.4
2.13
3.12
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
Qg(on)
Qgs
95
27
40
nC
nC
nC
A
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
b
b
Qgd
b12
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
RthJC
RthCK
0.42
K/W
K/W
20.80 21.46
15.75 16.26
TO-247, TO-3P
0.25
e
5.20
19.81 20.32
4.50
5.72 0.205 0.225
L
.780 .800
.177
L1
∅P 3.55
3.65
.140 .144
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Q
5.89
4.32
6.40 0.232 0.252
R
S
5.49
.170 .216
242 BSC
Symbol
IS
TestConditions
6.15 BSC
VGS = 0 V
26
104
1.3
A
TO-268 Outline
ISM
Repetitive; Note1
A
V
VSD
IF = I , VGS = 0 V,
PulsSe test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
QRM
IRM
250
ns
µC
A
IF = IS, -di/dt = 100 A/µs, VR = 100 V
0.85
8
TO-3P Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
A1
A2
b
1.15
1.9
.4
1.45
.045 .057
b2
2.1
.75
.83
C
.65
.016 .026
D
E
13.80 14.00
.543 .551
.624 .632
.524 .535
15.85 16.05
E1
13.3
13.6
e
H
L
5.45 BSC
.215 BSC
.736 .752
.094 .106
18.70 19.10
2.40
1.20
2.70
1.40
L1
.047 .055
L2
L3
L4
1.00
1.15
.039 .045
.010 BSC
0.25 BSC
3.80
4.10
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
