High Speed IGBT with Diode
IXSH30N60CD1
IXSK30N60CD1
IXST30N60CD1
VCES = 600 V
IC25 55 A
VCE(sat) = 2.5 V
=
Short Circuit SOA Capability
tfi
= 70 ns
Preliminary data
TO-247AD
(IXSH)
Symbol
TestConditions
MaximumRatings
G
C
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
E
TJ = 25°C to 150°C; RGE = 1 MW
TO-268 (D3)
(IXST)
VGES
VGEM
Continuous
Transient
±20
±30
V
V
C
G
E
IC25
IC90
ICM
TC = 25°C
55
30
A
A
A
TC = 90°C
TO-264
(IXSK)
TC = 25°C, 1 ms
110
SSOA
VGE= 15 V, TJ = 125°C, RG = 10 W
ICM = 60
A
(RBSOA)
Clamped inductive load, VCL = 0.8 VCES
G
tSC
(SCSOA)
VGE= 15 V, VCE = 360 V, TJ = 125°C
RG = 33 W, non repetitive
10
ms
W
C
E
G = Gate
C = Collector
TAB = Collector
PC
TC = 25°C
200
E = Emitter
TJ
-55 ... +150
150
°C
°C
°C
Features
TJM
Tstg
• Internationalstandardpackages:
JEDEC TO-247, TO-264& TO-268
• Short Circuit SOA capability
-55 ... +150
Md
Mountingtorque
1.13/10 Nm/lb.in.
• High freqeuncy IGBT and anti-
parallel FRED in one package
Weight
6
g
• New generation HDMOSTM process
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switch-modeandresonant-mode
powersupplies
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
VGE(th)
IC = 750 mA, VGE = 0 V
600
4
V
V
IC = 2.5 mA, VCE = VGE
7
Advantages
• Space savings (two devices in one
package)
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
200 mA
mA
3
• Easy to mount with 1 screw
(isolatedmountingscrewhole)
• Surface mountable, high power case
style
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
2.5
VCE(sat)
VGE = 15 V
IC = IC90
V
• Reduces assembly time and cost
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98518A(7/00)
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