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IXFC52N30P

型号：

IXFC52N30P

描述：

PolarHTTM HiPerFET功率MOSFET[ PolarHTTM HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

96 K

下载PDF手册
Advance Technical Information  
PolarHTTM  
HiPerFET  
Power MOSFET  
IXFC52N30P  
VDSS  
ID25  
= 300 V  
= 32 A  
RDS(on) = 75 mΩ  
N-Channel Enhancement Mode  
ISOPLUS220TM(IXFC)  
E153432  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
300  
300  
V
V
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
ID25  
IDM  
TC = 25°C  
32  
A
A
TC = 25°C, pulse width limited by TJM  
150  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
IAR  
TC = 25°C  
52  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
1.0  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
10  
V/ns  
TC = 25°C  
100  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z Silicon chip on Direct-Copper-Bond  
substrate  
TL  
VISOL  
1.6 mm (0.062 in.) from case for 10 s  
50/60 Hz, RMS, t = 1minute, leads-to-tab  
300  
2500  
°C  
V~  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
z Low drain to tab capacitance(<30pF)  
FC  
Mounting Force  
11..65/2.5..15  
2.0  
N/lb  
g
Weight  
ISOPLUS220  
Advantages  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
Easy to mount  
Space savings  
High power density  
z
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 20 VDC, VDS = 0  
300  
V
V
z
2.5  
5.0  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
65  
75 mΩ  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
DS99115A(04/05)  
© 2003 IXYS All rights reserved  
IXFC 52N30P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
ISOPLUS220 Outline  
VDS = 10 V; ID = 0.5 ID25, pulse test  
20  
30  
S
Ciss  
Coss  
Crss  
3490  
550  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
130  
td(on)  
tr  
td(off)  
tf  
24  
22  
60  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 4 Ω (External)  
Qg(on)  
Qgs  
110  
25  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
53  
RthJC  
RthCK  
1.25 K/W  
K/W  
0.21  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IS  
TestConditions  
VGS = 0 V  
32  
150  
1.5  
A
ISM  
Repetitive  
A
V
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
ns  
Trr  
IF = 25A  
-di/dt = 100 A/µs  
VR = 100V  
250  
1.0  
QRM  
µC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXFC 52N30P  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
150  
125  
100  
75  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
9V  
VGS = 10V  
8V  
7V  
6V  
8V  
7V  
50  
6V  
5V  
25  
5V  
0
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
5
10  
15  
20  
25  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. RDS(on) Normalized to ID25 Value vs.  
Junction Temperature  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3
2.8  
2.6  
2.4  
2.2  
2
VGS = 10V  
VGS = 10V  
8V  
7V  
ID = 52A  
1.8  
1.6  
1.4  
1.2  
1
ID = 26A  
6V  
5V  
0.8  
0.6  
0.4  
0
1
2
3
4
5
6
7
8
9
10  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID25  
Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.8  
3.4  
3
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
2.6  
2.2  
1.8  
1.4  
1
TJ = 125ºC  
TJ = 25ºC  
0.6  
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2003 IXYS All rights reserved  
IXFC 52N30P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
-40ºC  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
0
10 20 30 40 50 60 70 80 90 100  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
150  
VDS = 150V  
ID = 26A  
125  
100  
75  
50  
25  
0
I
G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
20  
40  
60  
80  
100  
120  
Q G - nanoCoulombs  
VS D - Volts  
Fig. 12. Forward-Bias Safe  
Operating Area  
Fig. 11. Capacitance  
10000  
1000  
f = 1MHz  
TC = 25ºC  
C
TJ = 15 0ºC  
iss  
RDS(on) Limit  
100  
10  
1
25µs  
1ms  
1000  
C
C
oss  
rss  
10ms  
100ms  
DC  
100  
10  
100  
1000  
0
5
10  
15  
20  
25  
30  
35  
40  
VD S - Volts  
VD S - Volts  
IXsions
IXFC 52N30P  
Fig. 6. Drain Current vs. Case  
Temperature  
Fig. 12. Forward-Bias Safe  
Operating Area  
27  
24  
21  
18  
15  
12  
9
1000  
100  
10  
TC = 25ºC  
TJ =15 0ºC  
RDS(on) Limit  
25µs  
1ms  
10ms  
6
1 0 0 m s  
3
DC  
1
0
10  
100  
1000  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TC - Degrees Centigrade  
Fig. 13. Maximum Transient Thermal Resistance  
10.00  
1.00  
0.10  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
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