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IXFN39N90

型号:

IXFN39N90

描述:

HiPerFET功率MOSFET的单MOSFET模[ HiPerFET Power MOSFETs Single MOSFET Die ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

126 K

HiPerFETTM  
Power MOSFETs  
Single MOSFET Die  
N-ChannelEnhancementMode  
VDSS = 900 V  
ID25 39 A  
RDS(on) = 0.22 Ω  
IXFN 39N90  
=
D
t 250 ns  
rr  
G
AvalancheRated, Highdv/dt, Lowtrr  
S
S
Symbol  
TestConditions  
Maximum Ratings  
miniBLOC,SOT-227B(IXFN)  
E153432  
VDSS  
VDGR  
TJ = 25°C to 150°C  
900  
900  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
S
VGS  
Continuous  
Transient  
±20  
±30  
V
G
VGSM  
V
A
ID25  
TC= 25°C  
39  
S
IDM  
IAR  
TC= 25°C, pulse width limited by TJM  
TC= 25°C  
154  
39  
A
A
D
EAR  
TC= 25°C  
TC= 25°C  
64  
4
mJ  
J
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
EAS  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
5
V/ns  
PD  
TC = 25°C  
700  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Internationalstandardpackages  
miniBLOC, withAluminiumnitride  
isolation  
TJM  
Tstg  
-55 ... +150  
Low RDS (on) HDMOSTM process  
Ruggedpolysilicongatecellstructure  
UnclampedInductiveSwitching(UIS)  
rated  
VISOL  
Md  
50/60 Hz, RMS  
IISOL 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
Mounting torque  
Terminal connection torque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Lowpackageinductance  
FastintrinsicRectifier  
Weight  
30  
g
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Applications  
DC-DC converters  
Batterychargers  
Switched-modeandresonant-mode  
power supplies  
min. typ. max.  
VDSS  
BVDSS  
VGS = 0 V, ID = 3 mA  
Temperature dependence  
900  
2.5  
V
V/K  
3.68  
VGH(th)  
VGH(th)  
VDS = VGS, ID = 8 mA  
Temperature dependence  
5.0  
V
V/K  
DC choppers  
Temperatureandlightingcontrols  
-0.009  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
100 µA  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
Advantages  
2
mA  
Easy to mount  
Space savings  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs,  
duty cycle d 2 %  
0.22  
98628B (9/01)  
© 2001 IXYS All rights reserved  
IXFN 39N90  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
miniBLOC, SOT-227 B  
min.  
typ. max.  
VDS = 15 V; ID = 0.5 • ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
30  
45  
S
Ciss  
Coss  
Crss  
9200  
1360  
380  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
45  
68  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
M4 screws (4x) supplied  
RG = 1 (External),  
125  
30  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
Qg(on)  
Qgs  
390  
65  
nC  
nC  
nC  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
E
F
4.09  
4.29  
0.161  
0.587  
0.169  
0.595  
14.91  
15.11  
Qgd  
190  
G30.12  
30.30  
1.186  
1.193  
H
38.00  
38.23  
1.496  
1.505  
RthJC  
RthCK  
0.18 K/W  
K/W  
J
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.481  
0.378  
K
0.05  
L
0.76  
0.84  
0.030  
0.496  
0.033  
0.506  
M
12.60  
12.85  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
P
4.95  
5.97  
0.195  
1.045  
0.235  
1.059  
Q
26.54  
26.90  
R
S
3.94  
4.72  
4.42  
4.85  
0.155  
0.186  
0.174  
0.191  
T
24.59  
-0.05  
25.07  
0.1  
0.968  
0.987  
0.004  
U
-0.002  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IS  
TestConditions  
VGS = 0 V  
39  
154  
1.3  
A
A
V
ISM  
Repetitive;  
pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t 300 µs, duty cycle d 2 %  
trr  
250 ns  
QRM  
IRM  
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
2.0  
9.0  
µC  
A
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXFN 39N90  
Figure 1. Output Characteristics at 25OC  
Figure 2. Output Characteristics at 125OC  
45  
40  
35  
30  
25  
20  
15  
10  
5
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = 125OC  
VGS = 9V  
TJ = 25OC  
VGS = 9V  
8V  
7V  
6V  
8V  
7V  
6V  
5V  
5V  
4V  
4V  
0
0
2
4
6
8
10 12 14 16 18 20  
0
2
4
6
8
10 12 14 16 18 20  
VDS - Volts  
VDS - Volts  
Figure3. RDS(on) normalized to 0.5 ID25 value vs. ID  
Figure 4. RDS(on) normalized to 0.5 ID25 value vs.TJ  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
VGS = 10V  
VGS = 10V  
TJ = 125OC  
I
D = 39A  
ID =19.5A  
TJ = 25OC  
0
10 20 30 40 50 60 70 80  
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees C  
Figure5.DrainCurrentvs.CaseTemperature  
Figure6. AdmittanceCurves  
40  
35  
30  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
TJ = 125oC  
TJ = 25oC  
0
-50 -25  
0
25 50 75 100 125 150  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
TC - Degrees C  
VGS - Volts  
© 2001 IXYS All rights reserved  
IXFN 39N90  
Figure8.CapacitanceCurves  
Figure7. GateCharge  
18  
16  
14  
12  
10  
8
10  
8
Ciss  
V
DS = 450 V  
D = 19.50A  
IG = 10 mA  
f = 100kHz  
I
6
4
6
4
2
Coss  
2
Crss  
0
0
0
5
10 15 20 25 30 35 40  
0
50 100 150 200 250 300 350 400  
VDS - Volts  
Gate Charge - nC  
Figure 9. Forward Voltage Drop of the Intrinsic Diode  
100  
80  
60  
40  
20  
0
VGS = 0V  
TJ = 125OC  
TJ = 25OC  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VSD - Volts  
Figure10.TransientThermalResistance  
1.000  
0.100  
0.010  
0.001  
Single Pulse  
10-4  
10-3  
10-2  
10-1  
100  
101  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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