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7P004FEB0500C15

型号：

7P004FEB0500C15

品牌：

WEDC[ WHITE ELECTRONIC DESIGNS CORPORATION ]

页数：

6 页

PDF大小：

63 K

下载PDF手册
PCMCIA Flash Memory Card  
FEB Series  
Eight Bit Flash Memory Card (AMD based) 1, 2, and 4 MEGABYTE  
General Description  
Features  
• Low cost Linear Flash Card  
The FEB Econo Flash card series offers a low cost eight  
bit linear Flash solid state storage solution for code/data  
storage and embedded applications.  
• Single 5 Volt Supply  
•Based on AMD Flash Components  
Packaged in PCMCIA type I or a type I half-card housing,  
the FEB card series is based on AMD Flash memories:  
Am29F080 (8Mb) or Am29F016 (16Mb) devices whose  
device codes are D5h and ADh respectively. Systems  
should be able to recognize both codes. The  
symmetrically blocked architecture and 5V operation  
provides a cost effective, high performance, nonvolatile  
storage solution. The PC Card form factor offers an  
industry standard pinout and mechanical outline, allowing  
density upgrades without system design changes.  
- very low power without entering reset mode  
- allows standard access from low power mode  
•Fast Read Performance  
- 100ns or 150ns Maximum Access Time  
• x8 Data Interface  
• High Performance Random Writes  
- 10µs Typical Word Write Time  
• Automated Write and Erase Algorithms  
- AMD Command Set  
The FEB card series is designed as a simple x8 linear  
array of Flash devices. The 2MB and 4MB density options  
may be built with either 8Mb or 16Mb components. Both  
components have uniform 64Kbyte sectors and use  
identical embedded automated write and erase algorithms.  
The 8 bit design provides very low power operation as  
only one component is active at a time. The AMD based  
components allow for very low standby currents without  
entering Reset mode. This allows for standard access time  
immediately from low power standby mode.  
• 50µA Typical Deep Power-Down  
• 100,000 Erase Cycles per Block  
• 64K word symmetrical Block Architecture  
• PC Card Standard Type I Form Factor  
Block Diagram  
SUPPORTED COMPONENTS (max  
4
X):  
DEVICE  
3
2
1
0
Am29F080  
Am29F016  
-
-
max 4MB  
max 8MB  
CS3  
CS2  
CS1  
CS0  
DEVICE  
DEVICE  
DEVICE  
ADDRESS BUS A0-A22  
A0-20(19)  
CD1#  
CD2#  
GND  
CS3  
CS2  
CS1  
CS0  
CE1#  
WAIT#  
BVD1  
BVD2  
CONTROL  
LOGIC  
Vcc  
Vcc  
VPP1  
VPP2  
VS1  
NC  
WE#  
OE#  
NC  
open  
open  
D0-D7  
VS2  
1
August 2000 Rev. 3 - ECO #13124  
PC Card Products  
PCMCIA Flash Memory Card  
FEB Series  
Pinout  
Pin Signal name I/O  
Function  
Ground  
Data bit 3  
Data bit 4  
Data bit 5  
Active  
Pin Signal name I/O  
Function  
Ground  
Active  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
GND  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
CE1#  
A10  
OE#  
A11  
A9  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
GND  
CD1#  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
CE2#  
VS1  
RFU  
RFU  
A17  
A18  
I/O  
I/O  
I/O  
I/O  
O
I/O  
I/O  
I/O  
I/O  
I
Card Detect 1  
Data bit 11  
Data bit 12  
Data bit 13  
Data bit 14  
Data bit 15  
Card Enable 2  
Voltage Sense 1  
Reserved  
LOW  
N.C.  
N.C.  
N.C.  
N.C.  
N.C.  
N.C.  
N.C.  
Data bit 6  
Data bit 7  
I/O  
I
I
I
I
I
I
I
Card enable 1  
Address bit 10  
Output enable  
Address bit 11  
Address bit 9  
Address bit 8  
Address bit 13  
LOW  
LOW  
I
O
Reserved  
Address bit 17  
Address bit 18  
A8  
A13  
I
I
2)  
14  
15  
A14  
I
I
Address bit 14  
Write Enable  
48  
49  
A19  
A20  
I
I
I
Address bit 19  
Address bit 20  
1MB  
2)  
WE#  
LOW  
N.C.  
2MB  
16  
17  
18  
RDY/BSY#  
Vcc  
Vpp1  
O
Ready/Busy  
Supply Voltage  
12VProg. Voltage  
50  
51  
52  
A21  
Vcc  
Vpp2  
Address bit 21  
Supply Voltage  
12V Prog. Voltage  
4MB 2)  
N.C.  
N.C.  
2)  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
A16  
A15  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
I
I
I
I
I
I
I
I
I
Address bit 16  
Address bit 15  
Address bit 12  
Address bit 7  
Address bit 6  
Address bit 5  
Address bit 4  
Address bit 3  
Address bit 2  
Address bit 1  
Address bit 0  
Data bit 0  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
A22  
A23  
A24  
A25  
VS2  
I
I
I
I
O
I
Address bit 22  
Address bit 23  
Address bit 24  
Address bit 25  
Voltage Sense 2  
Card Reset  
Extended Bus cycle  
Reserved  
Attrib Mem Select  
Bat. Volt. Detect 2  
Bat. Volt. Detect 1  
Data bit 8  
8MB  
N.C.  
N.C.  
N.C.  
N.C.  
N.C.  
N.C.  
RST  
Wait#  
RFU  
REG#  
BVD2  
BVD1  
DQ8  
DQ9  
DQ10  
O
I
O
O
I/O  
I/O  
O
N.C.  
I
I
A0  
DQ0  
DQ1  
DQ2  
I/O  
I/O  
I/O  
N.C.  
N.C.  
N.C.  
Data bit 1  
Data bit 2  
Data bit 9  
Data bit 10  
1)  
33  
34  
WP  
GND  
O
Write Potect  
Ground  
67  
68  
CD2#  
GND  
O
Card Detect 2  
Ground  
LOW  
Notes:  
1. Connected to GND - no write protection.  
2. Shows density for which specified address bit is MSB. Higher order addresses are not connected (i.e. for 4MB card  
A21 is MSB, A22-A25 are N.C.).  
Mechanical  
Interconnect area  
1.6mm ± 0.05  
(0.063”)  
10.0mm MIN  
(0.400”)  
3.0mm MIN  
1.0mm ± 0.05  
(0.039”)  
Substrate area  
54.0mm ± 0.10  
(2.126”)  
85.6mm ± 0.20  
(3.370”)  
1.0mm ± 0.05  
(0.039”)  
10.0mm MIN  
(0.400”)  
3.3mm ± T1 (0.130”)  
T1=0.10mm interconnect area  
T1=0.20mm substrate area  
2
August 2000 Rev. 3 - ECO #13124  
PC Card Products  
PCMCIA Flash Memory Card  
FEB Series  
Card Signal Description  
Symbol  
A0 - A25  
Type  
INPUT  
Name and Function  
ADDRESS INPUTS: A0 through A25 enable direct addressing of  
up to 64MB of memory on the card. The memory will wrap at the  
card density boundary. The system should not try to access memory  
beyond the card density. The upper addresses are not connected.  
DQ0 – DQ15  
INPUT/OUT DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the  
bi-directional databus. DQ0 - DQ7 constitute the lower (even) byte.  
DQ8 – DQ15 are not connected. DQ7 is the MSB.  
CE1#, CE2#  
OE#  
INPUT  
INPUT  
INPUT  
N.C.  
CARD ENABLE 1 AND 2: CE1# enables even byte accesses,  
CE2# enables odd byte accesses. CE2# is not connected.  
OUTPUT ENABLE: Active low signal enabling read data from the  
memory card.  
WRITE ENABLE: Active low signal gating write data to the  
memory card.  
READY/BUSY OUTPUT: Indicates status of internally timed erase  
or program algorithms. A high output indicates that the card is ready  
to accept accesses. This signal is not connected.  
CARD DETECT 1 and 2: Provide card insertion detection. These  
signals are connected to ground internally on the memory card. The  
host socket interface circuitry shall supply 10K-ohm or larger pull-up  
resistors on these signal pins.  
WE#  
RDY/BSY#  
CD1#, CD2#  
OUTPUT  
WP  
OUTPUT  
N.C.  
WRITE PROTECT: This signal is pulled low internally. This  
signifies write protect = "off " for all cases.  
PROGRAM/ERASE POWER SUPPLY: 12V. Not connected for  
5V only card.  
VPP1, VPP2  
VCC  
GND  
REG#  
CARD POWER SUPPLY: 5.0V  
GROUND: for all internal circuitry.  
ATTRIBUTE MEMORY SELECT: This signal is not connected  
- card does not have attribute memory.  
RESET: Active high signal for placing cards in Power-on default  
state. Reset can be used as a Power-Down signal for the memory  
array.  
N.C.  
N.C.  
RST  
WAIT#  
OUTPUT  
OUTPUT  
OUTPUT  
WAIT: This signal is pulled high internally for compatibility. No  
wait states are generated.  
BATTERY VOLTAGE DETECT: These signals are pulled high to  
maintain SRAM card compatibility.  
VOLTAGE SENSE: Notifies the host socket of the card's VCC  
requirements. VS1 and VS2 are open to indicate a 5V card has been  
inserted.  
BVD1, BVD2  
VS1, VS2  
RFU  
N.C.  
RESERVED FOR FUTURE USE  
NO INTERNAL CONNECTION TO CARD: pin may be driven  
or left floating  
Functional Truth Table  
Function Mode  
/REG /CE2 /CE1 /OE /WE D15-D8  
D7-D0  
High-Z  
Even-Byte  
Even-Byte  
Standby Mode  
Read Low Byte Access  
Write Low Byte Access  
High-Z  
High-Z  
X
X
X
X
X
X
X
H
L
L
X
L
H
X
H
L
3
August 2000 Rev. 3 - ECO #13124  
PC Card Products  
PCMCIA Flash Memory Card  
FEB Series  
DC Characteristics (1)  
3
)
Symbol Parameter  
Density  
Notes Typ  
Max Units Test Conditions  
(MBytes)  
I
VCC Read Current  
1,2,4,8  
30  
mA  
VCC = 5.25V  
tcycle = 100ns  
CCR  
I
VCC Program Current  
VCC Erase Current  
VCC Standby Current  
1,2,4,8  
1,2,4,8  
1,2,4,8  
60  
60  
50  
mA  
mA  
µA  
CCW  
I
CCE  
2)  
I
20  
VCC = 5.25V  
Control Signals = VCC  
Reset = X  
CCS  
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V  
Notes:  
1. All currents are RMS values unless otherwise specified.  
2. Control Signals: CE1#, CE2#, OE#, WE#.  
3. Typical: VCC = 5V, T = +25°C.  
AC Characteristics (1)  
VCC = 5V ± 5%, TA = 0°C to + 70°C  
Symbol  
Parameter  
100 ns  
150 ns  
Min  
Max  
Min  
Max  
Unit  
ns  
Read Cycle Time  
100  
150  
tC(R)  
t (A)  
Address Access Time  
Card Enable Access Time  
Output Enable Access Time  
Write Cycle Time  
100  
100  
50  
150  
150  
75  
ns  
a
t (CE)  
a
ns  
t (OE)  
a
ns  
t W  
c
100  
60  
150  
80  
ns  
t (WE)  
W
Write Pulse Width  
ns  
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.  
Data Write and Erase Performance (1 ,3)  
VCC = 5V ± 5%, TA = 0°C to + 70°C  
(1)  
Typ  
Symbol  
Parameter  
Notes Min  
Max  
Units  
Test Conditions  
t
t
Byte Program time  
2,4  
7
1000 µs  
WHQV1  
EHQV1  
t
t
Block Program Time  
Block Erase Time  
2
2
0.15  
1
0.7  
15  
sec  
sec  
Word Program Mode  
WHQV2  
EHQV2  
Notes:  
1. Typical: Nominal voltages and TA = 25°C.  
2. Excludes system overhead.  
3. Valid for all speed options.  
4. To maximize system performance RDY/BSY# signal should be polled.  
5. Chip erase time based on 8 Mbit Flash components.  
4
August 2000 Rev. 3 - ECO #13124  
PC Card Products  
PCMCIA Flash Memory Card  
FEB Series  
PRODUCT MARKING  
WED7P008FEB0500C15 C995 9915  
EDI  
Date code  
Lot code / trace number  
Part number  
Company Name  
Note:  
Some products are currently marked with our pre-merger company name/acronym (EDI). During our  
transition period, some products will also be marked with our new company name/acronym (WED).  
Starting October 2000 all PCMCIA products will be marked only with the WED prefix.  
PART NUMBERING  
7P008FEB0500C15  
Card access time  
15  
25  
150ns  
250ns  
Temperature range  
C
I
Commercial 0°C to +70°C  
Industrial -40°C to +85°C  
Packaging option  
00  
Standard, type 1  
Card family and version  
- See Card Family and Version Info. for details (next page)  
Card capacity  
008  
8MB  
PC card  
P
Standard PCMCIA  
R
Ruggedized PCMCIA  
Card technology  
7
8
FLASH  
SRAM  
5
August 2000 Rev. 3 - ECO #13124  
PC Card Products  
PCMCIA Flash Memory Card  
FEB Series  
Ordering Information  
Eight Bit Flash Memory Card  
7P XXX FEB YY 00 T ZZ  
where  
XXX:  
001  
002  
004  
008  
1MB (03 only)  
2MB (03, 05)  
4MB (03, 05)  
8MB (05 only)  
YY:  
T:  
03  
05  
29F080 base  
29F016 base  
C
I
Commercial  
Industrial  
M
Military Temp  
ZZ:  
10  
15  
100ns  
150ns  
Revision history:  
rev level  
rev 0  
description  
date  
initial release  
Logo change  
Feb 2, 1998  
May 27, 1999  
June 1, 2000  
rev 1  
rev 2  
Added page 5  
Page Header change  
Corrected Errors on pg. 4  
rev 3  
August 1, 2000  
White Electronic Designs Corporation  
One Research Drive, Westborough, MA 01581, USA  
tel: (508) 366 5151  
fax: (508) 836 4850  
www.whiteedc.com  
6
August 2000 Rev. 3 - ECO #13124  
PC Card Products  
厂商 型号 描述 页数 下载

WEDC

 		7P001FEA0200C15 [ Flash Card, 1MX8, 150ns, CARD-68 ] 6 页

WEDC

 		7P001FEA0300C15 [ Flash Card, 1MX8, 150ns, CARD-68 ] 6 页

WEDC

 		7P001FLG0100C15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

ETC

 		7P001FLG0100C20 周边其他\n[ Peripheral Miscellaneous ] 13 页

WEDC

 		7P001FLG0100I15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0100I20 [ Flash Card, 512MX16, 200ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0101C15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0101C20 [ Flash Card, 512MX16, 200ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0101I15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

ETC

 		7P001FLG0101I20 周边其他\n[ Peripheral Miscellaneous ] 13 页

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