IXSA 15N120B
IXSP 15N120B
TO-220 AB Dimensions
Symbol
TestConditions
Characteristic Values
Min. Typ. Max.
(TJ = 25°C, unless otherwise specified)
gfs
IC = IC90; VCE = 10 V,
Note2
7
9.5
S
Cies
1400
98
pF
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
pF
pF
Cres
37
Qg
57
14
25
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
30
ns
ns
ns
ns
mJ
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
Bottom Side
IC = IC90, VGE = 15 V
25
VCE = 960 V, RG = Roff = 10 Ω
148 280
160 320
Note3
Eoff
1.75
3.0
td(on)
tri
30
25
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
Eon
td(off)
tfi
1.1
265
298
3.1
mJ
ns
VCE = 960 V, RG = Roff = 10 Ω
Note3
ns
Eoff
mJ
RthJC
RthCK
0.83 K/W
K/W
TO-220
0.5
TO-263AAOutline
Notes: 1. Devicemustbeheatsunkforhightemperatureleakagecurrent
measurementstoavoidthermalrunaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Switching times may increase for V (Clamp) > 0.8 V , higher T or
increasedR .
CE
CES
J
G
1. Gate
2. Collector
3. Emitter
4. Collector
BottomSide
Dim.
Millimeter
Inches
Min.RecommendedFootprint
(Dimensions in inches and mm)
Min.
Max.
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
E1
e
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
