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VUO105-14NO7

型号:

VUO105-14NO7

描述:

三相整流桥[ Three Phase Rectifier Bridge ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

79 K

VUO 105  
IdAVM = 140 A  
VRRM = 1200-1800 V  
Three Phase  
Rectifier Bridge  
-
+
~
VRSM  
V
VRRM  
V
Type  
+
~
~
~
~
1200  
1400  
1600  
1800  
1200  
1400  
1600  
1800  
VUO 105-12NO7  
VUO 105-14NO7  
VUO 105-16NO7  
VUO 105-18NO7*  
* delivery time on request  
~
Symbol  
Test Conditions  
Maximum Ratings  
Features  
Package with screw terminals  
Isolation voltage 3000 V~  
Planar passivated chips  
Blocking voltage up to 1800 V  
Low forward voltage drop  
UL registered E 72873  
IdAVM  
IFSM  
TC = 85°C, module  
= 45°C;  
140  
A
T
t = 10 ms (50 Hz), sine  
1500  
1650  
A
A
VVRJ= 0  
t = 8.3 ms (60 Hz), sine  
T
= T  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1350  
1500  
A
A
VVRJ= 0 VJM  
Applications  
I2t  
T
= 45°C  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
11250  
11300  
A2s  
A2s  
VVRJ= 0  
Supplies for DC power equipment  
Input rectifiers for PWM inverter  
Battery DC power supplies  
T
= T  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
9120  
9350  
A2s  
A2s  
VVRJ= 0 VJM  
Field supply for DC motors  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
°C  
°C  
°C  
Advantages  
Easy to mount with two screws  
Space and weight savings  
Improved temperature and power  
-40...+150  
VISOL  
Md  
50/60 Hz, RMS  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
IISOL £ 1 mA  
cycling  
Mounting torque (M5)  
5 ± 15 %  
44 ± 15 %  
5 ± 15 %  
Nm  
lb.in.  
Nm  
Terminal connection torque (M5)  
typ.  
44 ± 15 %  
lb.in.  
Dimensions in mm (1 mm = 0.0394")  
Weight  
225  
g
Symbol  
IR  
Test Conditions  
Characteristic Values  
V = VRRM  
VRR = VRRM  
;
;
TVJ = 25°C  
TVJ = TVJM  
£
£
0.3  
8.0  
mA  
mA  
VF  
VT0  
rT  
IF = 150 A;  
TVJ = 25°C  
£
1.6  
0.8  
5
V
V
For power-loss calculations only  
mW  
RthJC  
RthJH  
per diode  
0.83  
K/W  
K/W  
per module  
0.138  
per diode  
per module  
1.13  
0.188  
K/W  
K/W  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  
VUO 105  
I2t  
Fig. 1 Forward current versus  
voltage drop per diode  
Fig. 2 Surge overload current per diode  
FSM: Crest value. t: duration  
Fig. 3 I2t versus time (1-10 ms)  
per diode  
I
Fig. 4 Power dissipation versus direct output current and ambient temperature  
Fig. 5 Maximum forward current at  
case temperature  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.014  
0.067  
0.139  
0.61  
0.011  
0.094  
0.28  
0.7  
Constants for ZthJK calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
5
0.014  
0.067  
0.139  
0.61  
0.011  
0.094  
0.28  
0.7  
0.3  
4.2  
Fig. 6 Transient thermal impedance per diode  
© 2000 IXYS All rights reserved  
2 - 2  
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