VTP Process Photodiodes
VTP8350
PACKAGE DIMENSIONS inch (mm)
CASE 11 CERAMIC
CHIP ACTIVE AREA: .012 in2 (7.45 mm2)
ABSOLUTE MAXIMUM RATINGS
PRODUCT DESCRIPTION
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
Planar silicon photodiode mounted on a two
lead ceramic substrate and coated with a thick
layer of clear epoxy. These diodes exhibit low
dark current under reverse bias and fast speed
of response.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP8350
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
65
Typ.
Max.
I
Short Circuit Current
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
80
µA
%/°C
mV
SC
TC I
I
.20
SC
SC
V
Open Circuit Voltage
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
350
-2.0
OC
TC V
V
mV/°C
nA
OC
OC
I
Dark Current
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
30
50
D
R
Shunt Resistance
100
GΩ
SH
C
Junction Capacitance
Responsivity
pF
J
2
Re
.06
.55
A/(W/cm )
A/W
S
Sensitivity
@ Peak
R
λ
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
400
33
1150
nm
range
λ
925
140
±60
nm
p
V
V
BR
1/2
θ
Degrees
W ⁄ Hz
cm Hz / W
-13
NEP
D*
1.8 x 10 (Typ.)
12
1.5 x 10 (Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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