IXFC 80N10
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS220 OUTLINE
VDS = 10 V; ID = IT Notes 1, 2
35
55
S
Ciss
Coss
Crss
4800
1675
590
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
50
75
95
31
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS
,
ID = 0.5 ID25, RG = 2.5 Ω (External)
Qg(on)
Qgs
180
42
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Notes 2
Qgd
75
RthJC
RthCK
0.54 K/W
K/W
0.3
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Note: All terminals are solder plated.
1 - Gate
2-Drain
3-Source
Symbol
TestConditions
IS
VGS = 0 V
80
320
1.5
A
A
V
ISM
VSD
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Note 1
trr
200
ns
IF = 25A
-di/dt = 100 A/µs,
VR = 50 V
QRM
0.5
6
µC
IRM
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IT = 40A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
