AdvancedTechnicalInformation
HiPerFETTM
IXFF 24N100
ID25 = 22 A
VDSS = 1000 V
RDSon = 390 mW
Power Mosfet
in High Voltage ISOPLUS I4-PACTM
1
5
Features
MOSFETs
• HiPerFETTM technology
- low RDSon
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
Symbol
VDSS
Conditions
MaximumRatings
TVJ = 25°C to 150°C
1000
±20
V
V
VGS
ID25
ID90
TC = 25°C
TC = 90°C
22
15
A
A
- fast intrinsic reverse diode
• ISOPLUS I4-PACTM
highvoltagepackage
- isolated back surface
- enlarged creepage towards heatsink
-enlargedcreepagebetweenhigh
voltage pins
IF25
IF90
(diode) TC = 25°C
(diode) TC = 90°C
120
75
A
A
dv/dt
VDS < VDSS; IF £ 100A;ôdiF/dtô£ 100A/µs; RG = 2 W
TVJ = 150°C
5
V/ns
EAR
TC = 25°C
64
mJ
-applicationfriendlypinout
-highreliability
- industry standard outline
Symbol
Conditions
CharacteristicValues
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
Applications
RDSon
VGSth
IDSS
VGS = 10 V;ID = ID90
390 mW
• switched mode power supplies
• DC-DC converters
• resonant converters
VDS = 20 V;ID = 8 mA;
2.5
5
V
VDS = VDSS;VGS = 0 V; TVJ = 25°C
TVJ = 125°C
0.1 mA
mA
0.25
IGSS
VGS = ±20 V; VDS = 0 V
200 nA
Qg
Qgs
Qgd
250
55
135
nC
nC
nC
td(on)
tr
td(off)
tf
35
35
75
21
ns
ns
ns
ns
VF
(diode) IF = 12 A;VGS = 0 V
1.5
V
trr
(diode) IF = 24 A;-di/dt = 100 A/µs; VDS = 100 V
250
ns
RthJC
0.32 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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