WST2907/S
PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE APPLICATION
SWITCHING APPLICATION
SOT-23
◇
Collector Current Ic=600mA
◇
Complementary to WST2222/S
3
2
℃
ABSOLUTE MAXIMUM RATINGS
(Ta=25
)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current
Symbol
Value
-60
-40
-5
-600
Unit
V
V
V
mA
1
V
CBO
V
CEO
V
EBO
1. Emitter
2. Base
3. Collector
TO-92
I
C
TO-92
:650
Collector Power Dissipation
Junction Temperature
Storage Temperature
P
mW
℃
C
SOT-23(S):350
3
2
Tj
Tstg
150
-55~
1
℃
+150
◇
◇
Mark Information
Ordering Information
Device
Package
WST2907
TO-92
2 B
WST2907S
SOT-23
℃
(Ta=25 , unless otherwise specified)
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Condition
Min TYP MAX Unit
㎂
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
BV
BV
BV
I =-10
,I =0
-60
-40
-5
V
V
V
㎁
CBO
CEO
EBO
C
E
I =-10mA ,I =0
C
B
㎂
I =-10 ,I =0
E
C
I
V
=-50V ,I =0
-20
CBO
CB
E
DC current gain
h
CE
BE
V
=-10V,I =-10mA
75
FE
CE
C
㎃
I =-150 , I =-15
㎃
㎃
-0.4
-1.6
-1.3
-2.6
V
V
C
B
B
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
V
(sat)
(sat)
㎃
I =-500 , I =-50
C
㎃
㎃
㎃
㎃
I =-150 , I =-15
C
B
B
I =-500 , I =-50
C
Output Capacitance
Transition Frequency
Cob
V
=-10V,f=1MHZ
8
F
P
CB
CE
㎃
fT
V
=-20V, I =-50
250
MHZ
ns
C
Vcc=-30V,Ic=-150mA,
IB1=-15mA
Turn on Time
Turn off Time
t
45
ON
Vcc=-6V,Ic=-150mA,
t
100
ns
OFF
IB1= B2=15mA
I
copyright@wooseok s.tech corp. All rights reserved.
JAN.2003 REV:01
1
