HiPerFETTM
VDSS
ID25
RDS(on)
IXFN 80N50
500 V 80 A
500 V 75 A
50 mΩ
55 mΩ
Power MOSFETs
Single Die MOSFET
IXFN 75N50
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
G
rr
S
S
Symbol
TestConditions
Maximum Ratings
miniBLOC,SOT-227B(IXFN)
E153432
VDSS
VDGR
TJ = 25°C to 150°C
500
500
V
V
S
TJ = 25°C to 150°C; RGS = 1 MΩ
G
VGS
Continuous
Transient
±20
±30
V
V
VGSM
S
ID25
IDM
IAR
TC = 25°C, Chip capability
TC = 25°C, pulse width limited by TJM
TC = 25°C
75N50
80N50
75N50
80N50
75
80
300
320
A
A
A
A
D
G = Gate
D = Drain
80
64
6
A
mJ
J
S = Source
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
EAR
TC = 25°C
TC = 25°C
EAS
Features
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
5
V/ns
• Internationalstandardpackages
• miniBLOC, withAluminiumnitride
isolation
• Low RDS (on) HDMOSTM process
PD
TC = 25°C
700
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
• Ruggedpolysilicongatecellstructure
-55 ... +150
• UnclampedInductiveSwitching(UIS)
rated
VISOL
Md
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
• Lowpackageinductance
• FastintrinsicRectifier
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
Applications
• DC-DC converters
• Batterychargers
• Switched-modeandresonant-mode
power supplies
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
500
2
V
V
• DC choppers
• Temperatureandlightingcontrols
VGH(th)
4
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
100 µA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
Advantages
2
mA
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
80N50
75N50
50 mΩ
55 mΩ
© 2002 IXYS All rights reserved
98538C (02/02)
