HiPerFETTM Power MOSFETs
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
800 V 14 A 0.70 W
800 V 15 A 0.60 W
trr £ 250 ns
IXFH14N80
IXFH15N80
High dv/dt, Low trr, HDMOSTM Family
Preliminary data
Symbol
TestConditions
MaximumRatings
TO-247 AD
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
800
800
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
(TAB)
ID25
IDM
IAR
TC = 25°C
14N80
15N80
14
15
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
14N80
15N80
56
60
A
A
G = Gate
S = Source
D = Drain
TAB = Drain
14N80
15N80
14
15
A
A
EAR
TC = 25°C
30
5
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
Features
PD
TC = 25°C
300
W
• Internationalstandardpackages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• UnclampedInductiveSwitching(UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
Md
1.13/10 Nm/lb.in.
Weight
6
g
Applications
• DC-DC converters
• Synchronousrectification
• Battery chargers
• Switched-modeandresonant-mode
power supplies
• DC choppers
• AC motor control
• Temperatureandlightingcontrols
• Low voltage relays
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 3 mA
DSS temperaturecoefficient
800
2.0
V
%/K
V
0.096
VGS(th)
VDS = VGS, ID = 4 mA
GS(th) temperature coefficient
4.5
V
V
-0.214
%/K
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100
nA
VDS = 0.8 VDSS
TJ = 25°C
TJ = 125°C
250
1
mA
mA
Advantages
V
GS = 0 V
• Easy to mount with 1 screw
(isolatedmountingscrewhole)
• Space savings
RDS(on)
VGS = 10 V, ID = 0.5 ID25
14N80
15N80
0.70
0.60
W
W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
96523B(3/98)
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