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4N35-X006

型号：

4N35-X006

描述：

光电耦合器，光电晶体管输出，带底座的连接[ Optocoupler, Phototransistor Output, With Base Connection ]

品牌：

VISHAY[ VISHAY ]

页数：

9 页

PDF大小：

158 K

下载PDF手册
4N35/ 4N36/ 4N37/ 4N38  
Vishay Semiconductors  
Optocoupler, Phototransistor Output, With Base Connection  
Features  
• Isolation Test Voltage 5300 V  
RMS  
• Interfaces with common logic families  
• Input-output coupling capacitance < 0.5 pF  
• Industry Standard Dual-in line 6-pin package  
• Lead-free component  
1
6
A
C
B
C
E
5
4
2
3
NC  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
i179004  
Pb  
e3  
Agency Approvals  
• Underwriters Laboratory File #E52744  
Pb-free  
• DIN EN 60747-5-2 (VDE0884)  
DIN EN 60747-5-5 pending  
Available with Option 1  
These isolation processes and the Vishay ISO9001  
quality program results in the highest isolation perfor-  
mance available for a commecial plastic phototransis-  
tor optocoupler.  
The devices are available in lead formed configura-  
tion suitable for surface mounting and are available  
either on tape and reel, or in standard tube shipping  
containers.  
Applications  
AC mains detection  
Reed relay driving  
Switch mode power supply feedback  
Telephone ring detection  
Logic ground isolation  
Note:  
Designing with data sheet is cover in Application Note 45  
Logic coupling with high frequency noise rejection  
Order Information  
Part  
Remarks  
Description  
4N35  
4N36  
4N37  
4N38  
CTR > 100 %, DIP-6  
This data sheet presents five families of Vishay Indus-  
try Standard Single Channel Phototransistor Cou-  
plers.These families include the 4N35/ 4N36/ 4N37/  
4N38 couplers.  
CTR > 100 %, DIP-6  
CTR > 100 %, DIP-6  
CTR > 20 %, DIP-6  
Each optocoupler consists of gallium arsenide infra-  
red LED and a silicon NPN phototransistor.  
These couplers are Underwriters Laboratories (UL)  
4N35-X006  
4N35-X007  
4N35-X009  
4N36-X007  
4N36-X009  
4N37-X006  
4N37-X009  
CTR > 100 %, DIP-6 400 mil (option 6)  
CTR > 100 %, SMD-6 (option 7)  
CTR > 100 %, SMD-6 (option 9)  
CTR > 100 %, SMD-6 (option 7)  
CTR > 100 %, SMD-6 (option 9)  
CTR > 100 %, DIP-6 400 mil (option 6)  
CTR > 100 %, SMD-6 (option 9)  
listed to comply with a 5300 V  
age.  
isolation test volt-  
RMS  
This isolation performance is accomplished through  
Vishay double molding isolation manufacturing pro-  
cess. Comliance to DIN EN 60747-5-2(VDE0884)/  
DIN EN 60747-5-5 pending partial discharge isolation  
specification is available for these families by ordering  
option 1.  
For additional information on the available options refer to  
Option Information.  
Document Number 83717  
Rev. 1.5, 27-Jan-05  
www.vishay.com  
1
4N35/ 4N36/ 4N37/ 4N38  
Vishay Semiconductors  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is  
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute  
Maximum Rating for extended periods of the time can adversely affect reliability.  
Input  
Parameter  
Test condition  
Symbol  
VR  
Value  
6.0  
Unit  
V
Reverse voltage  
Forward current  
Surge current  
IF  
60  
2.5  
100  
mA  
A
≤ 10 µs  
IFSM  
Pdiss  
Power dissipation  
mW  
Output  
Parameter  
Test condition  
Symbol  
VCEO  
Value  
70  
Unit  
V
Collector-emitter breakdown  
voltage  
Emitter-base breakdown  
voltage  
VEBO  
7.0  
V
Collector current  
IC  
IC  
50  
mA  
mA  
mW  
(t ≤ 1.0 ms)  
100  
150  
Power dissipation  
Pdiss  
Coupler  
Parameter  
Test condition  
Symbol  
VISO  
Value  
5300  
Unit  
Isolation test voltage  
VRMS  
Creepage  
Clearance  
≥ 7.0  
≥ 7.0  
≥ 0.4  
mm  
mm  
mm  
Isolation thickness between  
emitter and detector  
Comparative tracking index per  
DIN IEC 112/VDE0303,part 1  
175  
1012  
1011  
Isolation resistance  
VIO = 500 V, Tamb = 25 °C  
IO = 500 V, Tamb = 100 °C  
RIO  
RIO  
Tstg  
Tamb  
Tj  
Ω
Ω
V
Storage temperature  
Operating temperature  
Junction temperature  
Soldering temperature  
- 55 to + 150  
°C  
°C  
°C  
°C  
- 55 to + 100  
100  
max. 10 s dip soldering:  
distance to seating plane  
≥ 1.5 mm  
Tsld  
260  
www.vishay.com  
2
Document Number 83717  
Rev. 1.5, 27-Jan-05  
4N35/ 4N36/ 4N37/ 4N38  
Vishay Semiconductors  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering  
evaluation. Typical values are for information only and are not part of the testing requirements.  
Input  
Parameter  
Forward voltage1)  
Test condition  
IF = 10 mA  
Symbol  
VF  
Min  
0.9  
Typ.  
1.3  
Max  
1.5  
Unit  
V
IF = 10 mA, Tamb = - 55 °C  
VR = 6.0 V  
VF  
IR  
1.3  
0.1  
25  
1.7  
10  
V
Reverse current1)  
Capacitance  
µA  
pF  
V
R = 0, f = 1.0 MHz  
CO  
1) Indicates JEDEC registered value  
Output  
Parameter  
Test condition  
Part  
Symbol  
BVCEO  
Min  
30  
Typ.  
Max  
Unit  
Collector-emitter breakdown  
voltage1)  
IC = 1.0 mA  
4N35  
V
4N36  
4N37  
4N38  
BVCEO  
BVCEO  
BVCEO  
BVECO  
30  
30  
80  
7.0  
V
V
V
V
Emitter-collector breakdown  
voltage1)  
IE = 100 µA  
Collector-base breakdown  
voltage1)  
IC = 100 µA, IB = 1.0 µA  
4N35  
BVCBO  
70  
V
4N36  
4N37  
4N38  
4N35  
BVCBO  
BVCBO  
BVCBO  
ICEO  
70  
70  
80  
V
V
V
Collector-emitter leakage  
current1)  
VCE = 10 V, IF = 0  
5.0  
50  
nA  
4N36  
4N37  
4N38  
4N35  
ICEO  
ICEO  
ICEO  
ICEO  
5.0  
5.0  
50  
50  
nA  
nA  
nA  
µA  
V
V
V
CE = 10 V, IF=0  
CE = 60 V, IF = 0  
50  
CE = 30 V, IF = 0, Tamb  
=
=
500  
100 °C  
4N36  
4N37  
4N38  
ICEO  
ICEO  
ICEO  
500  
500  
µA  
µA  
µA  
V
CE = 60 V, IF = 0, Tamb  
6.0  
6.0  
100 °C  
Collector-emitter capacitance  
VCE = 0  
CCE  
pF  
1) Indicates JEDEC registered value  
Coupler  
Parameter  
Test condition  
VIO = 500 V  
f = 1.0 MHz  
Symbol  
RIO  
Min  
1011  
Typ.  
0.5  
Max  
Unit  
Resistance, input to output1)  
Capacitance (input-output)  
Ω
CIO  
pF  
1) Indicates JEDEC registered value  
Document Number 83717  
Rev. 1.5, 27-Jan-05  
www.vishay.com  
3
4N35/ 4N36/ 4N37/ 4N38  
Vishay Semiconductors  
Current Transfer Ratio  
Parameter  
DC Current Transfer Ratio1)  
Test condition  
Part  
Symbol  
CTRDC  
Min  
100  
Typ.  
50  
Max  
Unit  
%
VCE = 10 V, IF = 10 mA  
4N35  
4N36  
4N37  
4N38  
4N35  
CTRDC  
CTRDC  
CTRDC  
CTRDC  
100  
100  
20  
%
%
%
%
V
V
CE = 10 V, IF = 20 mA  
CE = 10 V, IF = 10 mA,  
40  
TA = - 55 to + 100 °C  
4N36  
4N37  
4N38  
CTRDC  
CTRDC  
CTRDC  
40  
40  
50  
50  
30  
%
%
%
1) Indicates JEDEC registered value  
Switching Characteristics  
Parameter  
Switching time1)  
Test condition  
Symbol  
ton, toff  
Min  
Typ.  
10  
Max  
Unit  
µs  
IC = 2 mA, RL = 100 Ω, VCC = 10 V  
1) Indicates JEDEC registered value  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
1.5  
1.0  
0.5  
0.0  
Normalized to:  
Vce=10 V, I =10 mA, T =25°C  
F
A
T
= –55°C  
= 25°C  
CTRce(sat) Vce=0.4 V  
A
T
A
T
A
=25°C  
T
= 85°C  
A
NCTR(SAT)  
NCTR  
.1  
1
10  
100  
0
1
10  
100  
I
- Forward Current - mA  
F
I
- LED Current - mA  
F
i4n25_01  
i4n25_02  
Figure 1. Forward Voltage vs. Forward Current  
Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED  
Current  
www.vishay.com  
4
Document Number 83717  
Rev. 1.5, 27-Jan-05  
4N35/ 4N36/ 4N37/ 4N38  
Vishay Semiconductors  
1.5  
1.0  
0.5  
0.0  
35  
30  
Normalized to:  
Vce=10 V, I =10 mA, T =25°C  
F
A
CTRce(sat) Vce=0.4 V  
25  
50°C  
20  
T
=50°C  
A
70°C  
15  
25°C  
85°C  
10  
5
NCTR(SAT)  
NCTR  
0
.1  
1
10  
100  
0
10  
20  
30  
40  
50  
60  
I - LED Current - mA  
F
I
- LED Current - mA  
F
i4n25_03  
i4n25_06  
Figure 3. Normalized Non-saturated and Saturated CTR vs. LED  
Current  
Figure 6. Collector-Emitter Current vs. Temperature and LED  
Current  
5
1.5  
10  
Normalized to:  
Vce=10 V, I =10 mA, T =25°C  
CTRce(sat) Vce=0.4 V  
4
F
A
10  
3
10  
1.0  
0.5  
0.0  
T
=70°C  
2
A
10  
1
0
V
ce  
= 10 V  
10  
10  
10  
10  
Typical  
NCTR(SAT)  
NCTR  
–1  
–2  
.1  
1
10  
100  
–20  
0
T
20  
40  
60  
80  
100  
I
- LED Current - mA  
F
- Ambient Temperature - °C  
A
i4n25_04  
i4n25_07  
Figure 4. Normalized Non-saturated and saturated CTR vs. LED  
Current  
Figure 7. Collector-Emitter Leakage Current vs.Temp.  
1.5  
1.5  
Normalized to:  
Normalized to:  
Vcb=9.3 V, I =10 mA, T =25°C  
Vce=10 V, I =10 mA, T =25°C  
F
A
F
A
CTRce(sat) Vce = 0.4 V  
1.0  
0.5  
0.0  
1.0  
0.5  
0.0  
T
A
=85°C  
25°C  
50°C  
70°C  
NCTR(SAT)  
NCTR  
.1  
1
10  
100  
.1  
1
10  
I - LED Current - mA  
F
100  
I
- LED Current - mA  
F
i4n25_05  
i4n25_08  
Figure 5. Normalized Non-saturated and saturated CTR vs. LED  
Current  
Figure 8. Normalized CTRcb vs. LED Current and Temp.  
Document Number 83717  
Rev. 1.5, 27-Jan-05  
www.vishay.com  
5
4N35/ 4N36/ 4N37/ 4N38  
Vishay Semiconductors  
1000  
100  
10  
2.5  
2.0  
10  
I
V
=10 mA,T =25°C  
A
CC  
F
Normalized to:  
=5.0 V, Vth=1.5 V  
I =10 mA, T =25°C  
F
A
t
PHL  
1
0.1  
1.5  
1.0  
t
Nib, T =–20°C  
PLH  
A
Nib, T = 25°C  
A
Nib, T = 50°C  
A
Nib, T = 70°C  
A
1
0.01  
.1  
1
10  
100  
.1  
1
10  
100  
RL - Collector Load Resistor - kΩ  
i4n25_09  
i4n25_12  
I
- LED Current - mA  
F
Figure 9. Normalized Photocurrent vs. IF and Temp.  
Figure 12. Propagation Delay vs. Collector Load Resistor  
1.2  
70°C  
IF  
1.0  
0.8  
0.6  
0.4  
25°C  
–20°C  
tD  
tR  
VO  
Normalized to:  
tPLH  
Ib=20 µA, Vce=10 V, T =25°C  
A
=1.5 V  
VTH  
tF  
tS  
tPHL  
1
10  
100  
1000  
Ib - Base Current - µA  
i4n25_10  
i4n25_13  
Figure 10. Normalized Non-saturated HFE vs. Base Current and  
Temperature  
Figure 13. Switching Timing  
1.5  
Normalized to:  
Vce=10 V, Ib=20 µA  
V
= 5.0 V  
CC  
50°C  
T
=25°C  
A
70°C  
25°C  
1.0  
F=10 KHz,  
DF=50%  
R
L
V
–20°C  
O
0.5  
0.0  
I
=1 0 mA  
F
Vce=0.4  
V
1
10  
100  
1000  
i4n25_11  
i4n25_14  
Ib - Base Current - µA  
Figure 11. Normalized HFE vs. Base Current and Temp.  
Figure 14. Switching Schematic  
www.vishay.com  
6
Document Number 83717  
Rev. 1.5, 27-Jan-05  
4N35/ 4N36/ 4N37/ 4N38  
Vishay Semiconductors  
Package Dimensions in Inches (mm)  
For 4N35/36/37/38..... see DIL300-6 Package dimension in the Package Section.  
For products with an option designator (e.g. 4N35-X006 or 4N36-X007)..... see DIP-6 Package dimensions in the Package Section.  
DIL300-6 Package Dimensions  
14770  
DIP-6 Package Dimensions  
pin one ID  
2
5
1
6
3
.248 (6.30)  
.256 (6.50)  
ISO Method A  
4
.335 (8.50)  
.343 (8.70)  
.300 (7.62)  
typ.  
.048 (0.45)  
.022 (0.55)  
.039  
(1.00)  
Min.  
.130 (3.30)  
.150 (3.81)  
18°  
4°  
.114 (2.90)  
.130 (3.0)  
typ.  
.031 (0.80) min.  
3°–9°  
.010 (.25)  
typ.  
.031 (0.80)  
.035 (0.90)  
.018 (0.45)  
.022 (0.55)  
.300–.347  
(7.62–8.81)  
.100 (2.54) typ.  
i178004  
Document Number 83717  
Rev. 1.5, 27-Jan-05  
www.vishay.com  
7
4N35/ 4N36/ 4N37/ 4N38  
Vishay Semiconductors  
Option 7  
Option 6  
Option 9  
.300 (7.62)  
TYP.  
.407 (10.36)  
.391 (9.96)  
.375 (9.53)  
.395 (10.03)  
.307 (7.8)  
.291 (7.4)  
.300 (7.62)  
ref.  
.028 (0.7)  
MIN.  
.180 (4.6)  
.160 (4.1)  
.0040 (.102)  
.0098 (.249)  
.012 (.30) typ.  
.315 (8.0)  
MIN.  
.020 (.51)  
.040 (1.02)  
.014 (0.35)  
.010 (0.25)  
.400 (10.16)  
.430 (10.92)  
.331 (8.4)  
MIN.  
15° max.  
18450  
.315 (8.00)  
min.  
.406 (10.3)  
MAX.  
www.vishay.com  
Document Number 83717  
Rev. 1.5, 27-Jan-05  
8
4N35/ 4N36/ 4N37/ 4N38  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 83717  
Rev. 1.5, 27-Jan-05  
www.vishay.com  
9
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