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IXFT140N10P

型号：

IXFT140N10P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

118 K

下载PDF手册
Advance Technical Information  
IXFH 140N10P  
IXFT 140N10P  
VDSS = 100 V  
PolarHVTM HiPerFET  
Power MOSFETs  
ID25  
= 140 A  
RDS(on)  
=
11 mΩ  
N-ChannelEnhancementMode  
FastIntrinsicDiode;AvalancheRated  
TO-247(IXFT)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
100  
100  
V
V
G
D (TAB)  
VGSM  
20  
V
D
S
ID25  
TC = 25°C  
140  
75  
A
A
A
ID(RMS)  
IDM  
External lead current limit  
TC = 25°C, pulse width limited by TJM  
300  
TO-268(IXFT)  
IAR  
TC = 25°C  
60  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
80  
mJ  
J
2.5  
G
S
D (TAB)  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
10  
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TC = 25°C  
600  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +150  
°C  
°C  
°C  
Features  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Md  
Mounting torque  
(TO-247)  
1.13/10 Nm/lb.in.  
Weight  
TO-247  
TO-268  
6.0  
5.0  
g
g
Symbol  
TestConditions  
Characteristic Values  
Advantages  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
Easy to mount  
Space savings  
High power density  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 4.0 mA  
VGS = 20 VDC, VDS = 0  
100  
V
V
z
3.0  
5.0  
z
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
500  
μA  
μA  
TJ = 175°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
VGS = 15 V, ID = 300 A  
11 mΩ  
mΩ  
9
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
DS99213(02/04)  
© 2004 IXYS All rights reserved  
IXFH 140N10P  
IXFT 140N10P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
45  
65  
S
Ciss  
Coss  
Crss  
4700  
1850  
600  
pF  
pF  
pF  
1
2
3
td(on)  
tr  
td(off)  
tf  
35  
50  
85  
26  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A  
RG = 4 Ω (External)  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Qg(on)  
Qgs  
155  
33  
nC  
nC  
nC  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
85  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
RthCK  
0.25 K/W  
K/W  
(TO-247)  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Source-Drain Diode  
Characteristic Values  
∅P 3.55  
3.65  
.140 .144  
(TJ = 25°C, unless otherwise specified)  
Q
5.89  
6.40 0.232 0.252  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
VGS = 0 V  
140  
A
A
V
TO-268 Outline  
ISM  
Repetitive  
300  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
trr  
IF = 25 A  
120  
ns  
-di/dt = 100 A/μs  
VR = 50 V  
QRM  
IRM  
0.8  
6
μC  
A
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
6,534,343  
6,583,505  
IXFH 140N10P  
IXFT 140N10P  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
ºC  
300  
270  
240  
210  
180  
150  
120  
90  
140  
120  
100  
80  
VGS = 10V  
9V  
V
GS  
= 10V  
9V  
8V  
7V  
60  
8V  
40  
7V  
6V  
6
60  
20  
6V  
30  
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
0
1
2
3
4
5
7
8
9
10  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 150  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
ºC  
2.4  
2.2  
2
140  
120  
100  
80  
VGS = 10V  
9V  
VGS = 10V  
1.8  
1.6  
1.4  
1.2  
1
8V  
ID = 140A  
7V  
6V  
60  
ID = 70A  
40  
20  
0.8  
0.6  
5V  
2
0
0
0.4  
0.8  
1.2  
1.6  
2.4  
2.8  
3.2  
-50 -25  
0
25  
50  
TJ - Degrees Centigrade  
75 100 125 150 175  
VD S - Volts  
Fig. 5. RDS(on) Normalized to 0.5 ID25  
Value vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Temperature  
3
90  
External Lead Current Limit  
2.75  
2.5  
2.25  
2
80  
70  
60  
50  
40  
30  
20  
10  
0
º
TJ = 175 C  
VGS = 10V  
1.75  
1.5  
1.25  
1
V
GS  
= 15V  
º
TJ = 25 C  
0.75  
-50 -25  
0
25  
50  
TC - Degrees Centigrade  
75 100 125 150 175  
0
50  
100  
150 200  
I D - Amperes  
250  
300  
350  
© 2004 IXYS All rights reserved  
IXFH 140N10P  
IXFT 140N10P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
250  
225  
200  
175  
150  
125  
100  
75  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
º
TJ = -40 C  
25ºC  
150ºC  
º
TJ = 150 C  
25ºC  
-40ºC  
50  
25  
0
4
4.5  
5
5.5  
6
6.5  
7
VG S - Volts  
7.5  
8
8.5  
9
9.5  
0
0
1
40  
80  
120 160 200 240 280 320  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
VDS = 50V  
ID = 70A  
I
G = 10mA  
º
TJ = 150 C  
º
TJ = 25 C  
0
0.4  
0.6  
0.8 1  
VS D - Volts  
1.2  
1.4  
1.6  
20  
40  
60  
80  
Q G - nanoCoulombs  
100 120 140 160  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
1000  
100  
10  
º
TJ = 175 C  
= 25ºC  
TC  
RDS(on) Limit  
C
iss  
25µs  
100µs  
C
oss  
1ms  
10ms  
C
rss  
DC  
f = 1MHz  
0
5
10  
15 20  
VDS - Volts  
25  
30  
35  
40  
10  
100  
1000  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
6,534,343  
6,583,505  
IXFH 140N10P  
IXFT 140N10P  
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is ta n c e  
1 . 0 0  
0 . 1 0  
0 . 0 1  
0 . 1  
1
1 0  
1 0 0  
1 0 0 0  
Pu ls e W id th - millis e c o n d s  
© 2004 IXYS All rights reserved  
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