PRELIMINARY
ICS840-75
75MHZ, LVCMOS/LVTTL
OSCILLATOR REPLACEMENT
Integrated
Circuit
Systems, Inc.
ABSOLUTE MAXIMUM RATINGS
SupplyVoltage, V
4.6V
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Func-
tional operation of product at these conditions or any condi-
tions beyond those listed in the DC Characteristics or AC
Characteristics is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may affect prod-
uct reliability.
DD
Inputs, V
-0.5V to VDD + 0.5 V
-0.5V to VDDO + 0.5V
I
Outputs, VO
Package Thermal Impedance, θJA
8 Lead TSSOP
101.7°C/W (0 mps)
112.7°C/W (0 lfpm)
8 Lead SOIC
StorageTemperature, T
-65°C to 150°C
STG
TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, VDD = VDDO = 3.3V 0.3V, TA = 0°C TO 70°C
Symbol Parameter
Test Conditions
Minimum
3.0
Typical
3.3
Maximum Units
VDD
VDDO
IDD
Power Supply Voltage
3.6
3.6
V
Output Supply Voltage
Power Supply Current
Output Supply Current
3.0
3.3
V
OE = VDD (output enabled)
80
mA
mA
IDDO
8
TABLE 4B. LVCMOS/LVTTL DC CHARACTERISTICS, VDD = VDDO = 3.3V 0.3V, TA = 0°C TO 70°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum Units
VIH
VIL
IIH
Input High Voltage
2
VDD + 0.3
V
V
Input Low Voltage
-0.3
0.8
5
Input High Current
VDD = VIN = 3.6V
µA
µA
V
IIL
Input Low Current
VDD = 3.6V, VIN = 0V
-150
2.6
VOH
VOL
Output High Voltage; NOTE 1
Output Low Voltage; NOTE 1
0.5
V
NOTE 1: Outputs terminated with 50Ω to VDDO/2. See Parameter Measurement Information Section,
"3.3V Output Load Test Circuit".
TABLE 5. CRYSTAL CHARACTERISTICS
Parameter
Test Conditions
Minimum
Typical Maximum Units
Fundamental
25
TBD
Mode of Oscillation
Frequency
MHz
Ω
Equivalent Series Resistance (ESR)
Shunt Capacitance
Drive Level
7
pF
TBD
µW
840AG-75
www.icst.com/products/hiperclocks.html
REV A. NOVEMBER 7, 2005
3