5SDD 20F5000
On-state
Maximum rated values 1)
Parameter
Symbol Conditions
IFAVM 50 Hz, Half sine wave, TC = 85 °C
min
typ
max
1978
Unit
A
Max. average on-state
current
3106
Max. RMS on-state current IFRMS
A
A
25.6×103
Max. peak non-repetitive
IFSM
tp = 10 ms, Tj = 160°C,
VR = 0 V
surge current
2.727×106
24×103
Limiting load integral
I2t
A2s
A
Max. peak non-repetitive
IFSM
tp = 8.3 ms, Tj = 160°C,
VR = 0 V
surge current
2.88×106
Limiting load integral
Characteristic values
Parameter
I2t
A2s
Symbol Conditions
min
min
typ
max
2.1
Unit
V
V
On-state voltage
Threshold voltage
Slope resistance
VF
V(T0)
rT
IF = 4000 A, Tj = 160°C
0.94
Tj = 160°C
IT = 2827...8480 A
0.284
mΩ
Switching
Characteristic values
Parameter
Symbol Conditions
typ
max
Unit
Qrr
4500
5500
µAs
Recovery charge
diF/dt = -30 A/µs, VR = 100 V
IFRM = 1000 A, Tj = 160°C
Thermal
Maximum rated values 1)
Parameter
Symbol Conditions
Tvj
min
-40
typ
typ
max
160
Unit
°C
Operating junction
temperature range
Storage temperature range Tstg
-40
160
°C
Characteristic values
Parameter
Symbol Conditions
min
max
Unit
Thermal resistance junction Rth(j-c)
Double-side cooled
15
K/kW
to case
Rth(j-c)A Anode-side cooled
Rth(j-c)C Cathode-side cooled
24
40
4
K/kW
K/kW
K/kW
Thermal resistance case to Rth(c-h)
Double-side cooled
heatsink
Rth(c-h)
Single-side cooled
8
K/kW
Analytical function for transient thermal
impedance:
n
(t) = åR
Z
thJC
i
(1-e-t/τ i )
i=1
i
1
2
3
4
Ri(K/kW)
6.060
0.6937
3.850
0.2040
3.780
0.0452
1.320
0.0040
τi(s)
Fig. 1 Transient thermal impedance junction-to-
case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1162-01 Jan. 03
page 2 of 5
