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5SDD40H4000

型号：

5SDD40H4000

描述：

整流器器二极管[ Rectifier Diode ]

品牌：

ABB[ THE ABB GROUP ]

页数：

7 页

PDF大小：

277 K

下载PDF手册
VRSM  
IF(AV)M  
IF(RMS)  
IFSM  
=
=
=
=
=
=
4000 V  
4140 A  
Rectifier Diode  
5SDD 40H4000  
6500 A  
46×103 A  
VF0  
0.905 V  
rF  
0.109  
mW  
Doc. No. 5SYA1176-00 March 05  
· Very low on-state losses  
· Optimum power handling capability  
Blocking  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
Value  
4000  
4000  
Unit  
V
Repetitive peak reverse voltage  
VRRM  
f = 50 Hz, tp = 10ms, Tj = -40...160°C  
f = 5 Hz, tp = 10ms, Tj = -40...160°C  
Non - repetitive peak reverse voltage VRSM  
V
Characteristic values  
Parameter  
Symbol Conditions  
IRRM VRRM, Tj = 160°C  
min  
typ  
typ  
max  
100  
Unit  
Max. (reverse) leakage current  
mA  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
max  
Unit  
kN  
m/s2  
m/s2  
Mounting force  
Acceleration  
Acceleration  
FM  
45  
50  
55  
50  
a
a
Device unclamped  
Device clamped  
100  
Characteristic values  
Parameter  
Symbol Conditions  
min  
25.5  
typ  
0.9  
max  
26.5  
Unit  
kg  
Weight  
m
Housing thickness  
Surface creepage distance  
Air strike distance  
H
FM = 50 kN, Ta = 25 °C  
mm  
mm  
mm  
DS  
Da  
40  
20  
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SDD 40H4000  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
IF(AV)M 50 Hz, Half sine wave, TC = 85 °C  
min  
typ  
max  
4140  
Unit  
Max. average on-state  
current  
A
Max. RMS on-state current IF(RMS)  
6500  
46×103  
A
A
Max. peak non-repetitive  
surge current  
IFSM  
tp = 10 ms, Tj = 160°C,  
VR = 0 V  
Limiting load integral  
I2t  
10.58×106 A2s  
49×103  
Max. peak non-repetitive  
surge current  
IFSM  
tp = 8.3 ms, Tj = 160°C,  
VR = 0 V  
A
Limiting load integral  
I2t  
10.02×106 A2s  
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
1.310  
0.905  
0.109  
Unit  
V
On-state voltage  
Threshold voltage  
Slope resistance  
VF  
IF = 4000 A, Tj = 160°C  
V(T0)  
rT  
Tj = 160°C  
IT = 6000...19000 A  
V
mW  
Switching  
Characteristic values  
Parameter  
Symbol Conditions  
Qrr diF/dt = -30 A/µs, VR = 100 V  
IFRM = 2000 A, Tj = 160°C  
min  
typ  
max  
Unit  
4600  
mAs  
Recovery charge  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1176-00 March 05  
page 2 of 7  
5SDD 40H4000  
Thermal  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
Unit  
Operating junction  
temperature range  
Tvj  
-40  
160  
°C  
Storage temperature range Tstg  
Characteristic values  
Parameter  
-40  
160  
°C  
Symbol Conditions  
min  
max  
Unit  
Thermal resistance junction Rth(j-c)  
to case  
Double-side cooled  
Fm = 45...55 kN  
8
K/kW  
Rth(j-c)A Anode-side cooled  
Fm = 45...55 kN  
14.5  
18.0  
2.5  
K/kW  
K/kW  
K/kW  
K/kW  
Rth(j-c)C Cathode-side cooled  
Fm = 45...55 kN  
Thermal resistance case to Rth(c-h)  
heatsink  
Double-side cooled  
Fm = 45...55 kN  
Rth(c-h)  
Single-side cooled  
Fm = 45...55 kN  
5.0  
Analytical function for transient thermal  
impedance:  
n
-t/ti  
Z
(t) = R (1-e )  
å
th(j-c)  
th i  
i=1  
i
1
2
3
4
Rth i(K/kW)  
4.533  
0.4406  
2.255  
0.1045  
0.868  
0.0092  
0.345  
0.0022  
ti(s)  
Fig. 1 Transient thermal impedance junction-to-  
case.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1176-00 March 05  
page 3 of 7  
5SDD 40H4000  
20000  
18000  
16000  
14000  
12000  
10000  
8000  
6000  
4000  
2000  
0
160 °C  
Tj  
= 25 °C  
0
1
2
3
4
V F  
( V )  
Fig. 2 Max. on-state characteristics.  
50  
40  
30  
20  
10  
0
100  
20  
i2dt  
80  
60  
40  
20  
15  
10  
5
VR = 0 V  
VR 0.5 VRRM  
£
I FSM  
0
1
10  
100  
1
10  
100  
t ( ms )  
Number n of cycles at 50 Hz  
Fig. 3 Surge forward current vs. pulse length. Half  
Fig. 4 Surge forward current vs. number of pulses.  
sine wave, single pulse, VR = 0 V  
Half sine wave, VR = 0 V  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1176-00 March 05  
page 4 of 7  
5SDD 40H4000  
10000  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
10000  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
= 60°  
120° 180°  
y
90° 120°  
= 30° 60°  
180°  
270°  
y
DC  
DC  
0
1000  
2000  
3000  
4000  
IFAV  
5000  
( A )  
0
1000  
2000  
3000  
4000  
5000  
I FAV ( A )  
Fig. 5 Forward power loss vs. average forward  
Fig. 6 Forward power loss vs. average forward  
current, sine waveform, f = 50 Hz  
current, square waveform, f = 50 Hz  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
DC  
DC  
270°  
= 30° 60°  
90°  
3000  
180°  
5000  
= 60°  
120°  
3000  
180°  
120°  
y
y
60  
60  
0
1000  
2000  
4000  
IFAV  
5000  
0
1000  
2000  
4000  
IFAV  
( A )  
( A )  
Fig. 7 Max. case temperature vs aver. forward  
Fig. 8 Max. case temperature vs aver. forward  
current, sine waveform, f = 50 Hz  
current, square waveform, f = 50 Hz  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1176-00 March 05  
page 5 of 7  
5SDD 40H4000  
500  
400  
300  
200  
100  
7000  
6000  
5000  
4000  
3000  
2000  
maximum  
average  
minimum  
max.  
avg.  
minimum  
0
20  
40  
60  
0
20  
40  
- di F/dt (A/µs)  
60  
- di F/dt (A/µs)  
Fig. 9 Reverse recovery charge vs. dIF/dt,  
IF = 2000 A, VR = 100 V, Tj = Tjmax, limit  
values  
Fig. 10 Peak reverse recovery current vs. diF/dt,  
IF = 2000 A, VR = 100 V, Tj = Tjmax, limit  
values  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1176-00 March 05  
page 6 of 7  
5SDD 40H4000  
Fig. 11 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.  
Related application notes:  
Doc. Nr  
Titel  
5SYA 2020  
5SYA 2029  
5SYA 2036  
Design of RC-Snubbers for Phase Control Applications  
Designing Large Rectifiers with High Power Diodes  
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors  
Please refer to http://www.abb.com/semiconductors for actual versions.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1176-00 March 05  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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