HiPerFETTM
Power MOSFETs
IXFJ 40N30 VDSS = 300 V
ID25 = 40 A
RDS(on) = 80 mW
trr < 200 ns
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
300
300
V
V
G
D
S
TJ = 25°C to 150°C; RGS = 1 MW
é
(TAB)
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
IDM
IAR
TC = 25°C
40
160
40
A
A
A
G = Gate,
S = Source,
D = Drain,
TAB = Drain
TC = 25°C, pulse width limited by TJM
TC = 25°C
EAR
TC = 25°C
30
5
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
,
V/ns
TJ £ 150°C, RG = 2 W
Features
PD
TC = 25°C
300
W
• Lowprofile, highpowerpackage
• Long creep and strike distances
• Easy up-grade path for TO-220
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
• LdeoswigRns
HDMOSTM process
-55 ... +150
• RuggeDdSp(oon)lysilicon gate cell structure
• UnclampedInductiveSwitching(UIS)
TL
1.6 mm (0.062 in.) from case for 10 s
300
5
°C
• rLaotewdpackage inductance
• -FaesatsinytrtionsdircivReeacntidfietor protect
Applications
Weight
g
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
• DC-DC converters
• Synchronousrectification
• Battery chargers
min. typ. max.
• Switched-modeandresonant-mode
powersupplies
VDSS
VGS = 0 V, ID = 250 mA
300
2
V
V
• DC choppers
VGS(th)
VDS = VGS, ID = 4 mA
4
• AC motor control
• Temperatureandlightingcontrols
• Low voltage relays
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
200 mA
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
Advantages
1
mA
• High power, low profile package
• Space savings
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
80 mW
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
985361/99)
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