IXFE 55N50
IXFE 50N50
Symbol
TestConditions
Characteristic Values
Min. Typ. Max.
ISOPLUS-227 B
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10 V; ID = IT, Note 2
45
S
Ciss
Coss
Crss
9400
1200
460
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
45
60
120
45
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 1 Ω (External),
Qg(on)
Qgs
Qgd
330
55
185
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RthJC
RthCK
0.25
K/W
K/W
0.07
Source-DrainDiode
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Symbol
IS
TestConditions
VGS = 0
55N50
50N50
55
50
A
A
ISM
VSD
trr
Repetitive;
55N50
50N50
220
200
A
A
pulse width limited by TJM
IF = I , VGS = 0 V,
1.3
V
PulsSe test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = IS, -di/dt = 100 A/µs, VR = 100 V T = 25°C 180
n s
n s
µC
A
TJ = 25°C
30
2
QRM
IRM
TJJ = 25°C
Please see IXFN55N50 data sheet
forcharacteristiccurves.
8
Notes: 1. Pulse width limited by TJM.
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%.
3. ITTest current:
IXFE55N50: I = 27.5 A
IXFE50N50: ITT = 25 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
4,850,072
