IXFE44N50QD2
IXFE44N50QD3
IXFE48N50QD2
IXFE48N50QD3
Symbol
TestConditions
Characteristic Values
ISOPLUS-227 B
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS(th)
VGS = 0 V, I = 1 mA
VDS = VGS, IDD = 4 mA
500
2
V
V
4
IGSS
IDSS
VGS = 20 VDC, VDS = 0
VDS = V
100
nA
T = 25°C
100
2
µA
mA
V
GS = 0 DVSS
TJJ = 125°C
RDS(on)
VGS = 10 V, ID = IT
44N50Q
48N50Q
0.12
0.11
Ω
Ω
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V, ID = IT, pulse test
30
36
S
Ciss
Coss
Crss
8000
930
220
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
33
22
75
10
ns
ns
ns
ns
V
= 10 V, VDS = 0.5 VDSS, ID = IT
RGGS = 1Ω (External)
Qg(on)
Qgs
Qgd
190
40
86
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RthJC
RthCK
0.31 K/W
K/W
0.07
Ultra-fast Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Pleasenote:
Symbol
IR
TestConditions
min. typ. max.
For characteristic curves please see
IXFK48N50Q
T = 25°C; V = V
200
µA
TJJ= 150°C; VRR= 0R.8RVM RRM
2.5 mA
VF
IF = 60A, VGS = 0 V
Note1
2.05
V
V
TJ = 150°C
1.4
50
trr
II = 1A, di/dt = -200 A/µs, VR = 30 V, TJ = 25°C
IF= 60A, di/dt = -100 A/µs, VR = 100 V, TJ = 100°C
35
ns
A
IRM
8.3
RthJC
RthJK
0.7 K/W
K/W
0.05
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IXFE44N50 I = 22A
IXFE48N50 ITT = 24A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1 6,162,665
6,534,343
6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
