5STB 18U6500
On-state
Parameter
Symbol Conditions
ITAVM Half sine wave, Tc = 70°C
min
typ.
max
Unit
Max. average on-state
1580
A
current
Max. RMS on-state current ITRMS
2480
29700
A
A
Max. peak non-repetitive
ITSM
tp = 10 ms, Tj = 110°C,
V = VR=0 V
surge current
Limiting load integral
I2t
4400
31800
kA2s
A
Max. peak non-repetitive
ITSM
tp = 8.3 ms, Tj = 110°C,
V = VR=0 V
surge current
Limiting load integral
On-state voltage
Threshold voltage
Slope resistance
Holding current
I2t
VT
VT0
rT
4190
kA2s
V
V
mΩ
mA
mA
IT = 1600 A, Tj= 110°C
IT = 1000 A - 3000 A, Tj= 110°C
Tj = 110°C
Tj = 25°C
Tj = 110°C
1.93
1.2
0.458
125
75
IH
Switching
Parameter
Symbol Conditions
min
typ.
max
Unit
Critical rate of rise of on-
state current
di/dtcrit
Cont.
f = 50 Hz
Cont.
250
A/µs
Tj = 110°C, ITRM = 2000 A,
VD ≤ 0.67⋅VRM
,
Critical rate of rise of on-
state current
di/dtcrit
1000
A/µs
IFG = 2 A, tr = 0.5 µs
f = 1Hz
Delay time
Turn-off time
td
tq
3
800
µs
µs
VD = 0.4⋅VRM, IFG = 2 A, tr = 0.5 µs
Tj = 110°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -1.5 A/µs,
VD ≤ 0.67⋅VRM, dvD/dt = 20V/µs,
Recovery charge
Qrr
Tj = 110°C, ITRM = 2000 A,
2100
3200
µAs
VR = 200 V,
diT/dt = -1.5 A/µs
Triggering
Parameter
Symbol Conditions
min
typ.
max
Unit
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Peak forward gate voltage VFGM
VGT
IGT
VGD
IGD
Tj = 25°C
Tj = 25°C
VD = 0.4 x VRM, Tvjmax = 110°C
VD = 0.4 x VRM
2.6
400
V
mA
V
mA
V
0.3
10
12
10
Max. rated peak forward
IFGM
A
gate current
Peak reverse gate voltage VRGM
Max. rated gate power loss PG
10
3
V
W
For DC gate current
Max. rated peak forward
PGM
see Fig. 9
gate power
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-02 Apr. 02
page 2 of 5
