IXFL 34N100
Symbol
gfs
T
e
s
t
C
o
n
d
i
t
i
o
n
s
C
h
a
r
a
c
t
e
r
i
s
t
i
c
V
a
l
u
e
s
ISOPLUS264OUTLINE
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 15 V; ID = IT
Note 2
18
40
S
Ciss
Coss
Crss
9200
1200
300
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
41
65
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 1 Ω (External)
110
30
Qg(on)
Qgs
380
65
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Qgd
185
RthJC
RthCK
0.225 K/W
K/W
0.05
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
34
A
A
ISM
Repetitive;
136
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
1.3
V
trr
QRM
IF = IS,-di/dt = 100 A/µs, VR = 100 V TJ = 25°C
180
330
2
ns
ns
µC
A
TJ = 125°C
TJ = 25°C
IRM
8
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. Test current IT = 30A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
