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5STP34Q5200

型号:

5STP34Q5200

描述:

相位控制晶闸管[ Phase Control Thyristor ]

品牌:

ABB[ THE ABB GROUP ]

页数:

6 页

PDF大小:

318 K

V
DSM  
ITAVM  
ITRMS  
ITSM  
V
T0  
=
=
=
5200 V  
3875 A  
6090 A  
Phase Control Thyristor  
= 55000 
A  
5STP 34Q5200  
=
=
1.03 V  
0.160  
r
T  
m  
Doc. No. 5SYA1052-01 Sep. 01  
Patented free-floating silicon technology  
Low on-state and switching losses  
Designed for traction, energy and industrial applications  
Optimum power handling capability  
Interdigitated amplifying gate  
Blocking  
Conditions  
5STP 34Q5000 5STP 34Q4600  
Part Number  
5STP  
5200 V  
VDSM  
VDRM  
VRSM1  
IDSM  
VRSM  
VRRM  
5000 V  
4200 V  
5500 V  
500 mA  
500 mA  
4600 V  
4000 V  
5100 V  
f = 5 Hz, tp = 10ms  
f = 50 Hz, tp = 10ms  
tp = 5ms, single pulse  
VDSM  
4400 V  
5700 V  
Tj = 125°C  
IRSM  
VRSM  
dV/dtcrit  
2000 V/µs  
Exp. to 0.67 x VDRM, Tj = 125°C  
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110°C  
Mechanical data  
FM  
Mounting force  
nom.  
min.  
90 kN  
81 kN  
max.  
108 kN  
a
Acceleration  
Device unclamped  
Device clamped  
Weight  
50 m/s2  
100 m/s2  
2.1 kg  
m
DS  
Da  
Surface creepage distance  
Air strike distance  
36 mm  
15 mm  
ABB Semiconductors AG reserves the right to change specifications without notice.  
5STP 34Q5200  
On-state  
ITAVM Max. average on-state current  
ITRMS Max. RMS on-state current  
3875 A  
6090 A  
Half sine wave, TC = 70°C  
ITSM  
Max. peak non-repetitive  
surge current  
55000 A  
tp =  
tp =  
10 ms  
8.3 ms  
10 ms  
Tj = 125°C  
60000 A  
After surge:  
I2t  
Limiting load integral  
15125 kA2
s tp =  
14940 kA2
s tp =  
VD = VR = 0V  
8.3 ms  
3000 A  
VT  
VT0  
rT  
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
1.54 V  
1.03 V  
IT =  
IT = 2300 - 7000 A  
Tj = 125°C  
0.160  
mΩ  
IH  
50-125 mA Tj = 25°C  
20-75 mA Tj = 125°C  
100- mA T
j
= 25°C  
IL  
Latching current  
500  
75-250 mA T
j
= 125°C  
Switching  
di/dtcrit Critical rate of rise of on-state  
current  
250 A/µs Cont. f = 50 Hz  
VD 0.67VDRM , Tj = 125°C  
ITRM = 3000 A  
500 A/µs 60 sec.  
f = 50Hz  
IFG = 2 A, tr = 0.5 µs  
IFG = 2 A, tr = 0.5 µs  
ITRM = 3000 A, Tj = 125°C  
td  
tq  
Delay time  
3.0 µs  
VD = 0.4VDRM  
VD 0.67VDRM  
Turn-off time  
700 µs  
dvD/dt = 20V/µs VR > 200 V, diT/dt = -5 A/µs  
Qrr  
Recovery charge  
min  
7000 µAs  
9000 µAs  
max  
Triggering  
VGT  
Gate trigger voltage  
2.6 V  
Tj = 25°  
IGT  
Gate trigger current  
400 mA Tj = 25°  
VGD  
IGD  
Gate non-trigger voltage  
Gate non-trigger current  
0.3 V  
10 mA  
12 V  
10 A  
10 V  
3 W  
VD =0.4 x VDRM  
VD = 0.4 x VDRM  
VFGM Peak forward gate voltage  
IFGM Peak forward gate current  
VRGM Peak reverse gate voltage  
PG Gate power loss  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1052-01 Sep. 01  
page 2 of 6  
5STP 34Q5200  
Thermal  
Tjmax  
Max. operating junction temperature  
125 °C  
range  
Tstg  
RthJC  
Storage temperature range  
Thermal resistance  
-40…140 °C  
10 K/kW  
Anode side cooled  
junction to case  
10 K/kW  
5 K/kW  
2 K/kW  
1 K/kW  
Cathode side cooled  
Double side cooled  
Single side cooled  
Double side cooled  
RthCH  
Thermal resistance case to  
heat sink  
Analytical function for transient thermal  
impedance:  
n
(t) = åR  
Z
thJC  
i
(1-e-t/τ i )  
i=1  
i
1
2
3
4
Ri(K/kW)  
3.27  
0.5237  
0.736  
0.1082  
0.661  
0.02  
0.312  
0.0075  
τi(s)  
Fig. 1 Transient thermal impedance junction to case.  
On-state characteristic model:  
VT = A+ BiT +Cln(iT +1)+ DIT  
Valid for iT = 500 – 14000 A  
A
B
C
D
1.0649  
0.000105  
-0.038879  
0.008155  
Fig. 2 On-state characteristics.  
Tj=125°C, 10ms half sine  
Fig. 3 On-state characteristics.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1052-01 Sep. 01  
page 3 of 6  
5STP 34Q5200  
Tcase
(°C)  
130  
Double-sided cooling  
125  
120  
115  
110  
105  
100  
95  
DC  
180° rectangular  
180° sine  
120° rectangular  
90  
85  
80  
75  
70  
0
1000  
2000  
3000  
4000  
5000  
6000  
IT
A
V
(A)  
Fig. 4 On-state power dissipation vs. mean on-  
state current. Turn - on losses excluded.  
Fig. 5 Max. permissible case temperature vs.  
mean on-state current.  
Fig. 6 Surge on-state current vs. pulse length.  
Half-sine wave.  
Fig. 7 Surge on-state current vs. number of  
pulses. Half-sine wave, 10 ms, 50Hz.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1052-01 Sep. 01  
page 4 of 6  
5STP 34Q5200  
Fig. 8 Gate trigger characteristics.  
Fig. 9 Max. peak gate power loss.  
Fig. 10 Recovery charge vs. decay rate of on-  
state current.  
Fig. 11 Peak reverse recovery current vs. decay  
rate of on-state current.  
Turn - off time, typical parameter relationship.  
Fig. 12 tq/tq1 = f1(Tj)  
Fig. 13 tq/tq1 = f2(-diT/dt)  
Fig. 14 tq/tq1 = f3(dv/dt)  
tq1 :at normalized values (see page 2)  
tq : at varying conditions  
tq = tq1 f1(Tj) f2(-diT/dt) f3(dv/dt)  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1052-01 Sep. 01  
page 5 of 6  
5STP 34Q5200  
Turn-on and Turn-off losses  
Fig. 15 Won = f(IT, tP), Tj = 125°C.  
Half sinusoidal waves.  
Fig. 16 Won = f(IT, di/dt), Tj = 125°C.  
Rectangular waves.  
Fig. 17 Woff = f(V0,IT), Tj = 125°C.  
Half sinusoidal waves. tP = 10 ms.  
Fig. 18 Woff = f(V0,di/dt), Tj = 125°C.  
Rectangular waves.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
ABB Semiconductors AG  
Fabrikstrasse 3  
Doc. No. 5SYA1052-01 Sep. 01  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)62 888 6419  
Fax  
+41 (0)62 888 6306  
abbsem@ch.abb.com  
www.abbsem.com  
Email  
Internet  
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