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IXFB38N100Q2

型号：

IXFB38N100Q2

描述：

HiPerFET TM功率MOSFET[ HiPerFET TM Power MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

126 K

下载PDF手册
HiPerFETTM  
Power MOSFETs  
IXFB38N100Q2  
VDSS = 1000 V  
ID25 38 A  
DS(on)= 0.25 Ω  
=
R
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, Low Intrinsic Rg  
High dV/dt, Low trr  
trr ≤ 300 ns  
PLUS264TM (IXFB)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
G
(TAB)  
D
S
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
38  
152  
38  
A
A
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
5.0  
mJ  
J
Features  
z Double metal process for low gate  
resistance  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
20  
V/ns  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
z Fast intrinsic rectifier  
PD  
TJ  
TC = 25°C  
890  
W
-55 ... +150  
°C  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
TL  
1.6 mm (0.063 in.) from case for 10 s  
Mounting Force  
300  
°C  
Applications  
Fc  
30...120/7.5...27 N/lb  
10  
z
DC-DC converters  
Weight  
g
z
Switched-mode and resonant-mode  
power supplies, >500kHz switching  
z
DC choppers  
z Pulsegeneration  
z Laser drivers  
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
min. typ. max.  
Advantages  
VGS = 0 V, ID = 1mA  
VDS = VGS, ID =8 mA  
1000  
V
z
PLUS 264TM package for clip or spring  
VGS(th)  
IGSS  
2.5  
5.5 V  
mounting  
z
Space savings  
VGS  
=
30 V, VDS = 0  
200 nA  
z
High power density  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
50 μA  
3 mA  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Note 1  
0.25 Ω  
DS98949E(09/05)  
© 2005 IXYS All rights reserved  
IXFB38N100Q2  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
PLUS264TM Outline  
VDS = 20 V; ID = 0.5 • ID25  
Note 1  
24  
40  
S
Ciss  
Coss  
Crss  
7200  
950  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
170  
td(on)  
tr  
td(off)  
tf  
25  
28  
57  
15  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1 Ω (External)  
QG(on)  
QGS  
250  
60  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
QGD  
105  
Terminals: 1 - Gate  
2 - Drain (Collector)  
RthJC  
RthCK  
0.14 K/W  
K/W  
3-Source(Emitter)  
4 - Drain (Collector)  
0.13  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
TestConditions  
IS  
VGS = 0 V  
38  
A
A
ISM  
Repetitive;  
152  
pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V, Note 1  
1.5  
V
trr  
300  
ns  
μC  
A
IF = 25A  
-di/dt = 100 A/μs  
VR = 100 V  
QRM  
IRM  
1.4  
9
Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETsandIGBTsarecoveredby  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
IXFB38N100Q2  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
20  
16  
12  
8
75  
60  
45  
30  
15  
0
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
7V  
6V  
5V  
8V  
7V  
6V  
5V  
4
0
0
1
2
3
4
5
6
7
25  
80  
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID25 Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
45  
36  
27  
18  
9
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
VGS = 10V  
9V  
8V  
7V  
6V  
5V  
ID = 38A  
ID = 19A  
0.7  
0.4  
0
-50 -25  
0
25 50 75 100 125 150  
0
5
10  
15  
20  
TJ - Degrees Centigrade  
V
DS - Volts  
Fig. 6. Drain Current vs. Case  
Temperature  
Fig. 5. RDS(on) Normalized to ID25 Value  
vs. ID  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
40  
32  
24  
16  
8
TJ = 125°C  
TJ = 25°C  
0
0.7  
-50 -25  
0
25 50 75 100 125 150  
0
20  
40  
ID - Amperes  
60  
TC - Degrees Centigrade  
© 2005 IXYS All rights reserved  
IXFB38N100Q2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
40  
32  
24  
16  
8
75  
60  
45  
30  
15  
0
TJ = -40°C  
T = -40 C  
°
J
TJ = 25°C  
25 C  
°
125 C  
°
TJ = 125°C  
0
3
3.5  
4
4.5  
5
5.5  
6
0
10  
20  
30  
40  
V
GS - Volts  
ID - Amperes  
Fig. 9. Source Current vs. Source-To-  
Drain Voltage  
Fig. 10. Gate Charge  
-100  
-80  
-60  
-40  
-20  
0
10  
8
VDS = 500V  
ID = 19A  
IG = 10mA  
6
T = 125 C  
°
J
4
T = 25 C  
°
J
2
0
0
50  
100  
150  
200  
250  
-0.3  
-0.5  
-0.7  
-0.9  
-1.1  
-1.3  
VSD - Volts  
QG - nanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
1
10000  
1000  
100  
Ciss  
f=1Mhz  
0.1  
Coss  
Crss  
0.01  
0
10  
20  
30  
40  
1
10  
100  
1000  
Pulse Width - milliseconds  
V
DS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
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