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ZXTP2013ZTA

型号：

ZXTP2013ZTA

描述：

100V PNP低饱和中功率晶体管SOT89[ 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 ]

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

6 页

PDF大小：

92 K

下载PDF手册
ZXTP2013Z  
100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89  
SUMMARY  
BVCEO = -100V : RSAT = 57m ; IC = -3.5A  
DESCRIPTION  
Packaged in the SOT89 outline this new low saturation 100V PNP transistor  
offers low on state losses m aking it ideal for use in DC-DC circuits, line  
switching and various driving and power m anagem ent functions.  
FEATURES  
• 3.5 am ps continuous current  
SOT89  
• Up to 10 am ps peak current  
• Very low saturation voltages  
APPLICATIONS  
• Motor driving  
• Line switching  
• High side switches  
• Subscriber line interface cards (SLIC)  
ORDERING INFORMATION  
DEVICE  
REEL  
S IZE  
QUANTITY PER  
REEL  
TAPE WIDTH  
7"  
12m m  
em bossed  
1,000 units  
ZXTP2013ZTA  
PINOUT  
DEVICE MARKING  
953  
VIEW  
ISSUE 1 - J UNE 2005  
1
ZXTP2013Z  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
S YMBOL  
LIMIT  
-140  
-100  
-7  
UNIT  
V
Co lle cto r-b a s e vo lta g e  
Co lle cto r-e m itte r vo lta g e  
Em itte r-b a s e vo lta g e  
BV  
BV  
BV  
CBO  
CEO  
EBO  
V
V
(a )  
Co n tin u o u s co lle cto r cu rre n t  
I
-3.5  
-10  
A
C
Pe a k p u ls e cu rre n t  
(a )  
I
A
CM  
Po w e r d is s ip a tio n a t T =25°C  
A
P
1.5  
12  
W
D
Lin e a r d e ra tin g fa cto r  
m W/°C  
(b )  
Po w e r d is s ip a tio n a t T =25°C  
A
P
2.1  
W
D
Lin e a r d e ra tin g fa cto r  
16.8  
m W/°C  
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e  
T , T  
-55 to 150  
°C  
j
s tg  
THERMAL RESISTANCE  
PARAMETER  
S YMBOL  
LIMIT  
83  
UNIT  
°C/W  
°C/W  
(a )  
J u n ctio n to a m b ie n t  
R
R
␪J A  
␪J A  
(b )  
J u n ctio n to a m b ie n t  
60  
NOTES:  
(a) For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
(b)For a device surface m ounted on 50m m x 50m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
ISSUE 1 - J UNE 2005  
2
ZXTP2013Z  
CHARACTERISTICS  
ISSUE 1 - J UNE 2005  
3
ZXTP2013Z  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
am b  
S YMBOL  
PARAMETER  
MIN.  
-140  
-140  
-100  
-7  
TYP. MAX. UNIT CONDITIONS  
Co lle cto r-b a s e b re a kd o w n vo lta g e  
Co lle cto r-e m itte r b re a kd o w n vo lta g e  
Co lle cto r-e m itte r b re a kd o w n vo lta g e  
Em itte r-b a s e b re a kd o w n vo lta g e  
Co lle cto r cu t-o ff cu rre n t  
BV  
BV  
BV  
BV  
-160  
-160  
-115  
-8.1  
Ͻ1  
V
I
I
I
I
= -100␮A  
CBO  
CER  
CEO  
EBO  
C
C
C
E
V
= -1␮A, RB Յ 1k⍀  
= -10m A*  
V
V
= -100␮A  
I
-20  
-0.5  
-20  
nA  
␮A  
nA  
␮A  
nA  
m V  
m V  
m V  
m V  
m V  
m V  
V
= -100V  
= -100V, T  
= -100V  
= -100V, T  
= -6V  
CBO  
CB  
V
=100ЊC  
=100ЊC  
CB  
am b  
am b  
Co lle cto r cu t-o ff cu rre n t  
I
Ͻ1  
V
CB  
CER  
RՅ1k⍀  
-0.5  
-10  
V
CB  
Em itte r cu t-o ff cu rre n t  
I
Ͻ1  
-20  
V
EB  
EBO  
Co lle cto r-e m itte r s a tu ra tio n vo lta g e  
V
-30  
I
I
I
I
I
I
I
I
I
I
I
I
= -0.1A, I = -10m A*  
B
CE(S AT)  
C
C
C
C
C
C
C
C
C
C
C
C
-65  
-85  
= -1A, I = -100m A*  
B
= -2A, I = -200m A*  
B
-110  
-230  
-135  
-300  
= -4A, I = -400m A*  
B
Ba s e -e m itte r s a tu ra tio n vo lta g e  
Ba s e -e m itte r tu rn o n vo lta g e  
V
V
-970 -1060  
-910 -1030  
250  
= -4A, I = -400m A*  
B
BE(S AT)  
BE(ON)  
FE  
= -4A, V = -1V*  
CE  
S ta tic fo rw a rd cu rre n t tra n s fe r ra tio  
h
100  
100  
25  
= -10m A, V = -1V*  
CE  
200  
50  
300  
= -1A, V = -1V*  
CE  
= -3A, V = -1V*  
CE  
= -4A, V = -1V*  
CE  
15  
30  
= -10A, V = -1V*  
CE  
5
Tra n s itio n fre q u e n cy  
f
125  
MHz  
= 100m A, V = 10V  
CE  
T
f=50MHz  
V = -10V, f= 1MHz*  
CB  
Ou tp u t ca p a cita n ce  
S w itch in g tim e s  
C
42  
42  
pF  
ns  
OBO  
t
t
I
I
= 1A, V = 10V,  
CC  
ON  
C
540  
= I = 100m A  
B2  
OFF  
B1  
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.  
ISSUE 1 - J UNE 2005  
4
ZXTP2013Z  
TYPICAL CHARACTERISTICS  
ISSUE 1 - J UNE 2005  
5
ZXTP2013Z  
PACKAGE OUTLINE  
PACKAGE DIMENSIONS  
Millim eters  
DIM  
Inches  
Millim eters  
Inches  
Min  
DIM  
Min  
1.40  
0.38  
-
Max  
1.60  
0.48  
0.53  
1.80  
0.44  
4.60  
Min  
Max  
0.630  
0.019  
0.021  
0.071  
0.017  
0.181  
Min  
1.40  
3.75  
-
Max  
Max  
0.059  
0.167  
0.102  
0.118  
0.112  
-
A
b
0.550  
0.015  
-
e
E
1.50  
4.25  
2.60  
3.00  
2.85  
-
0.055  
0.150  
-
b1  
b2  
c
E1  
G
H
-
1.50  
0.28  
4.40  
0.060  
0.011  
0.173  
2.90  
2.60  
-
0.114  
0.102  
-
D
© Zetex Sem iconductors plc 2005  
Europe  
Am ericas  
Asia Pacific  
Corporate Headquarters  
Zetex Gm bH  
Zetex Inc  
Zetex (Asia) Ltd  
Zetex Sem iconductors plc  
Zetex Technology Park  
Chadderton, Oldham , OL9 9LL  
United Kingdom  
Streitfeldstraß e 19  
D-81673 München  
Germ any  
700 Veterans Mem orial Hwy  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in m ajor countries world-wide.  
This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Com pany  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product inform ation, log on to www.zetex.com  
ISSUE 1 - J UNE 2005  
6
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