IXBH 42N170A
IXBT 42N170A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; V = 10 V,
15
24
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %
∅ P
Cies
Coes
Cres
3700
170
45
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
155
30
55
nC
nC
nC
e
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A12
4.7
2.2
2.2
1.0
1.65
2.87
5.3
2.54
2.6
1.4
2.13
3.12
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
td(on)
tri
td(off)
tfi
25
35
230
50
ns
ns
ns
ns
mJ
Inductive load, TJ = 25°C
A
IC = IC90, VGE = 15 V
b
VCE = 0.8 VCES, RG = Roff = 1.0 Ω
b
b12
Remarks: Switching times may
C
D
E
.4
.8
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
20.80 21.46
Eoff
2.8
15.75 16.26
e
5.20
5.72 0.205 0.225
td(on)
tri
Eon
td(off)
tfi
25
38
5.0
300
120
ns
ns
mJ
ns
ns
L
19.81 20.32
.780 .800
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 1.0 Ω
L1
4.50
.177
∅P 3.55
3.65
.140 .144
Q
5.89
4.32
6.40 0.232 0.252
R
5.49
.170 .216
S
6.15 BSC
242 BSC
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
,
higher TJ or increased RG
Eoff
6
mJ
TO-268 Outline
RthJC
RthCK
0.35 K/W
K/W
(TO-247)
0.25
ReverseDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
I
= IC90, VGE = 0 V, Pulse test,
5.0
V
tF < 300 us, duty cycle d < 2%
IRM
trr
IF = 25A, VGE = 0 V, -diF/dt = 50 A/us
vR = 100V
15
A
330
ns
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
