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DS18B20

型号：

DS18B20

描述：

分辨率可编程的1-Wire数字温度计[ Programmable Resolution 1-Wire Digital Thermometer ]

品牌：

DALLAS[ DALLAS SEMICONDUCTOR ]

页数：

27 页

PDF大小：

392 K

下载PDF手册
PRELIMINARY  
DS18B20  
Programmable Resolution  
1-Wire® Digital Thermometer  
www.dalsemi.com  
FEATURES  
PIN ASSIGNMENT  
ꢀ Unique 1-Wire interface requires only one  
port pin for communication  
BOTTOM VIEW  
DALLAS  
DS1820  
1 2 3  
ꢀ Multidrop capability simplifies distributed  
temperature sensing applications  
ꢀ Requires no external components  
ꢀ Can be powered from data line. Power supply  
range is 3.0V to 5.5V  
ꢀ Zero standby power required  
ꢀ Measures temperatures from -55°C to  
+125°C. Fahrenheit equivalent is -67°F to  
+257°F  
ꢀ ±0.5°C accuracy from -10°C to +85°C  
ꢀ Thermometer resolution is programmable  
from 9 to 12 bits  
ꢀ Converts 12-bit temperature to digital word in  
750 ms (max.)  
1 2 3  
DS18B20 To-92  
Package  
NC  
NC  
VDD  
DQ  
1
2
3
4
8
7
6
5
NC  
NC  
NC  
GND  
ꢀ User-definable, nonvolatile temperature alarm  
settings  
DS18B20Z  
ꢀ Alarm search command identifies and  
addresses devices whose temperature is  
outside of programmed limits (temperature  
alarm condition)  
8-Pin SOIC (150 mil)  
PIN DESCRIPTION  
GND - Ground  
ꢀ Applications include thermostatic controls,  
industrial systems, consumer products,  
thermometers, or any thermally sensitive  
system  
DQ  
VDD - Power Supply Voltage  
NC - No Connect  
- Data In/Out  
DESCRIPTION  
The DS18B20 Digital Thermometer provides 9 to 12-bit (configurable) temperature readings which  
indicate the temperature of the device.  
Information is sent to/from the DS18B20 over a 1-Wire interface, so that only one wire (and ground)  
needs to be connected from a central microprocessor to a DS18B20. Power for reading, writing, and  
performing temperature conversions can be derived from the data line itself with no need for an external  
power source.  
Because each DS18B20 contains a unique silicon serial number, multiple DS18B20s can exist on the  
same 1-Wire bus. This allows for placing temperature sensors in many different places. Applications  
where this feature is useful include HVAC environmental controls, sensing temperatures inside buildings,  
equipment or machinery, and process monitoring and control.  
1 of 27  
050400  
DS18B20  
DETAILED PIN DESCRIPTION Table 1  
PIN  
PIN  
8PIN SOIC TO92 SYMBOL DESCRIPTION  
5
4
1
2
GND  
DQ  
Ground.  
Data Input/Output pin. For 1-Wire operation: Open  
drain. (See “Parasite Power” section.)  
Optional VDD pin. See “Parasite Power” section for  
details of connection. VDD must be grounded for  
operation in parasite power mode.  
3
3
VDD  
DS18B20Z (8-pin SOIC): All pins not specified in this table are not to be connected.  
OVERVIEW  
The block diagram of Figure 1 shows the major components of the DS18B20. The DS18B20 has four  
main data components: 1) 64-bit lasered ROM, 2) temperature sensor, 3) nonvolatile temperature alarm  
triggers TH and TL, and 4) a configuration register. The device derives its power from the 1-Wire  
communication line by storing energy on an internal capacitor during periods of time when the signal line  
is high and continues to operate off this power source during the low times of the 1-Wire line until it  
returns high to replenish the parasite (capacitor) supply. As an alternative, the DS18B20 may also be  
powered from an external 3 volt - 5.5 volt supply.  
Communication to the DS18B20 is via a 1-Wire port. With the 1-Wire port, the memory and control  
functions will not be available before the ROM function protocol has been established. The master must  
first provide one of five ROM function commands: 1) Read ROM, 2) Match ROM, 3) Search ROM, 4)  
Skip ROM, or 5) Alarm Search. These commands operate on the 64-bit lasered ROM portion of each  
device and can single out a specific device if many are present on the 1-Wire line as well as indicate to  
the bus master how many and what types of devices are present. After a ROM function sequence has  
been successfully executed, the memory and control functions are accessible and the master may then  
provide any one of the six memory and control function commands.  
One control function command instructs the DS18B20 to perform a temperature measurement. The result  
of this measurement will be placed in the DS18B20’s scratch-pad memory, and may be read by issuing a  
memory function command which reads the contents of the scratchpad memory. The temperature alarm  
triggers TH and TL consist of 1 byte EEPROM each. If the alarm search command is not applied to the  
DS18B20, these registers may be used as general purpose user memory. The scratchpad also contains a  
configuration byte to set the desired resolution of the temperature to digital conversion. Writing TH, TL,  
and the configuration byte is done using a memory function command. Read access to these registers is  
through the scratchpad. All data is read and written least significant bit first.  
2 of 27  
DS18B20  
DS18B20 BLOCK DIAGRAM Figure 1  
MEMORY AND  
CONTROL LOGIC  
64-BIT ROM  
AND  
DQ  
1-WIRE PORT  
TEMPERATURE SENSOR  
SCRATCHPAD  
HIGH TEMPERATURE  
TRIGGER, TH  
INTERNAL VDD  
LOW TEMPERATURE  
TRIGGER, TL  
POWER  
SUPPLY  
SENSE  
8-BIT CRC  
GENERATOR  
VDD  
CONFIGURATION  
REGISTER  
PARASITE POWER  
The block diagram (Figure 1) shows the parasite-powered circuitry. This circuitry “steals” power  
whenever the DQ or VDD pins are high. DQ will provide sufficient power as long as the specified timing  
and voltage requirements are met (see the section titled “1-Wire Bus System”). The advantages of  
parasite power are twofold: 1) by parasiting off this pin, no local power source is needed for remote  
sensing of temperature, and 2) the ROM may be read in absence of normal power.  
In order for the DS18B20 to be able to perform accurate temperature conversions, sufficient power must  
be provided over the DQ line when a temperature conversion is taking place. Since the operating current  
of the DS18B20 is up to 1.5 mA, the DQ line will not have sufficient drive due to the 5k pullup resistor.  
This problem is particularly acute if several DS18B20s are on the same DQ and attempting to convert  
simultaneously.  
There are two ways to assure that the DS18B20 has sufficient supply current during its active conversion  
cycle. The first is to provide a strong pullup on the DQ line whenever temperature conversions or copies  
to the E2 memory are taking place. This may be accomplished by using a MOSFET to pull the DQ line  
directly to the power supply as shown in Figure 2. The DQ line must be switched over to the strong pull-  
up within 10 µs maximum after issuing any protocol that involves copying to the E2 memory or initiates  
temperature conversions. When using the parasite power mode, the VDD pin must be tied to ground.  
Another method of supplying current to the DS18B20 is through the use of an external power supply tied  
to the VDD pin, as shown in Figure 3. The advantage to this is that the strong pullup is not required on the  
DQ line, and the bus master need not be tied up holding that line high during temperature conversions.  
This allows other data traffic on the 1-Wire bus during the conversion time. In addition, any number of  
DS18B20s may be placed on the 1-Wire bus, and if they all use external power, they may all  
simultaneously perform temperature conversions by issuing the Skip ROM command and then issuing the  
Convert T command. Note that as long as the external power supply is active, the GND pin may not be  
floating.  
The use of parasite power is not recommended above 100°C, since it may not be able to sustain  
communications given the higher leakage currents the DS18B20 exhibits at these temperatures. For  
applications in which such temperatures are likely, it is strongly recommended that VDD be applied to the  
DS18B20.  
3 of 27  
DS18B20  
For situations where the bus master does not know whether the DS18B20s on the bus are parasite  
powered or supplied with external VDD, a provision is made in the DS18B20 to signal the power supply  
scheme used. The bus master can determine if any DS18B20s are on the bus which require the strong  
pullup by sending a Skip ROM protocol, then issuing the read power supply command. After this  
command is issued, the master then issues read time slots. The DS18B20 will send back “0” on the  
1-Wire bus if it is parasite powered; it will send back a “1” if it is powered from the VDD pin. If the  
master receives a “0,” it knows that it must supply the strong pullup on the DQ line during temperature  
conversions. See “Memory Command Functions” section for more detail on this command protocol.  
STRONG PULLUP FOR SUPPLYING DS18B20 DURING TEMPERATURE  
CONVERSION Figure 2  
+3V - +5.5V  
DS18B20  
+3V - +5.5V  
VDD  
GND  
I/O  
4.7k  
µP  
USING VDD TO SUPPLY TEMPERATURE CONVERSION CURRENT Figure 3  
TO OTHER  
1-WIRE  
DS18B20  
DEVICES  
+3V - +5.5V  
4.7k  
VDD  
EXTERNAL  
+3V - +5.5V  
SUPPLY  
I/O  
µP  
4 of 27  
DS18B20  
OPERATION - MEASURING TEMPERATURE  
The core functionality of the DS18B20 is its direct-to-digital temperature sensor. The resolution of the  
DS18B20 is configurable (9, 10, 11, or 12 bits), with 12-bit readings the factory default state. This  
equates to a temperature resolution of 0.5°C, 0.25°C, 0.125°C, or 0.0625°C. Following the issuance of  
the Convert T [44h] command, a temperature conversion is performed and the thermal data is stored in  
the scratchpad memory in a 16-bit, sign-extended two’s complement format. The temperature  
information can be retrieved over the 1-Wire interface by issuing a Read Scratchpad [BEh] command  
once the conversion has been performed. The data is transferred over the 1-Wire bus, LSB first. The  
MSB of the temperature register contains the “sign” (S) bit, denoting whether the temperature is positive  
or negative.  
Table 2 describes the exact relationship of output data to measured temperature. The table assumes 12-bit  
resolution. If the DS18B20 is configured for a lower resolution, insignificant bits will contain zeros. For  
Fahrenheit usage, a lookup table or conversion routine must be used.  
Temperature/Data Relationships Table 2  
23 22 21 20 2-1 2-2 2-3 2-4 LSB  
MSb  
S
LSb  
26 25 24 MSB  
(unit = °C)  
S
S
S
S
TEMPERATURE DIGITAL OUTPUT DIGITAL  
(Binary)  
OUTPUT  
(Hex)  
+125°C  
+85°C  
+25.0625°C  
+10.125°C  
+0.5°C  
0°C  
-0.5°C  
-10.125°C  
-25.0625°C  
-55°C  
0000 0111 1101 0000  
0000 0101 0101 0000  
0000 0001 1001 0001  
0000 0000 1010 0010  
0000 0000 0000 1000  
0000 0000 0000 0000  
1111 1111 1111 1000  
1111 1111 0101 1110  
1111 1110 0110 1111  
1111 1100 1001 0000  
07D0h  
0550h*  
0191h  
00A2h  
0008h  
0000h  
FFF8h  
FF5Eh  
FF6Fh  
FC90h  
*The power on reset register value is +85°C.  
OPERATION - ALARM SIGNALING  
After the DS18B20 has performed a temperature conversion, the temperature value is compared to the  
trigger values stored in TH and TL. Since these registers are 8-bit only, bits 9-12 are ignored for  
comparison. The most significant bit of TH or TL directly corresponds to the sign bit of the 16-bit  
temperature register. If the result of a temperature measurement is higher than TH or lower than TL, an  
alarm flag inside the device is set. This flag is updated with every temperature measurement. As long as  
the alarm flag is set, the DS18B20 will respond to the alarm search command. This allows many  
DS18B20s to be connected in parallel doing simultaneous temperature measurements. If somewhere the  
temperature exceeds the limits, the alarming device(s) can be identified and read immediately without  
having to read non-alarming devices.  
5 of 27  
DS18B20  
64-BIT LASERED ROM  
Each DS18B20 contains a unique ROM code that is 64-bits long. The first 8 bits are a 1-Wire family  
code (DS18B20 code is 28h). The next 48 bits are a unique serial number. The last 8 bits are a CRC of  
the first 56 bits. (See Figure 4.) The 64-bit ROM and ROM Function Control section allow the DS18B20  
to operate as a 1-Wire device and follow the 1-Wire protocol detailed in the section “1-Wire Bus  
System.” The functions required to control sections of the DS18B20 are not accessible until the ROM  
function protocol has been satisfied. This protocol is described in the ROM function protocol flowchart  
(Figure 5). The 1-Wire bus master must first provide one of five ROM function commands: 1) Read  
ROM, 2) Match ROM, 3) Search ROM, 4) Skip ROM, or 5) Alarm Search. After a ROM function  
sequence has been successfully executed, the functions specific to the DS18B20 are accessible and the  
bus master may then provide one of the six memory and control function commands.  
CRC GENERATION  
The DS18B20 has an 8-bit CRC stored in the most significant byte of the 64-bit ROM. The bus master  
can compute a CRC value from the first 56-bits of the 64-bit ROM and compare it to the value stored  
within the DS18B20 to determine if the ROM data has been received error-free by the bus master. The  
equivalent polynomial function of this CRC is:  
CRC = X8 + X5 + X4 + 1  
The DS18B20 also generates an 8-bit CRC value using the same polynomial function shown above and  
provides this value to the bus master to validate the transfer of data bytes. In each case where a CRC is  
used for data transfer validation, the bus master must calculate a CRC value using the polynomial  
function given above and compare the calculated value to either the 8-bit CRC value stored in the 64-bit  
ROM portion of the DS18B20 (for ROM reads) or the 8-bit CRC value computed within the DS18B20  
(which is read as a ninth byte when the scratchpad is read). The comparison of CRC values and decision  
to continue with an operation are determined entirely by the bus master. There is no circuitry inside the  
DS18B20 that prevents a command sequence from proceeding if the CRC stored in or calculated by the  
DS18B20 does not match the value generated by the bus master.  
The 1-Wire CRC can be generated using a polynomial generator consisting of a shift register and XOR  
gates as shown in Figure 6. Additional information about the Dallas 1-Wire Cyclic Redundancy Check is  
available in Application Note 27 entitled “Understanding and Using Cyclic Redundancy Checks with  
Dallas Semiconductor Touch Memory Products.”  
The shift register bits are initialized to 0. Then starting with the least significant bit of the family code,  
1 bit at a time is shifted in. After the 8th bit of the family code has been entered, then the serial number is  
entered. After the 48th bit of the serial number has been entered, the shift register contains the CRC  
value. Shifting in the 8 bits of CRC should return the shift register to all 0s.  
64-BIT LASERED ROM Figure 4  
8-BIT FAMILY CODE  
8-BIT CRC CODE  
48-BIT SERIAL NUMBER  
LSB MSB LSB MSB  
(28h)  
MSB  
LSB  
6 of 27  
DS18B20  
ROM FUNCTIONS FLOW CHART Figure 5  
7 of 27  
DS18B20  
INPUT  
1-WIRE CRC CODE Figure 6  
XOR  
XOR  
XOR  
(MSB)  
(LSB)  
MEMORY  
The DS18B20’s memory is organized as shown in Figure 8. The memory consists of a scratchpad RAM  
and a nonvolatile, electrically erasable (E2) RAM, which stores the high and low temperature triggers TH  
and TL, and the configuration register. The scratchpad helps insure data integrity when communicating  
over the 1-Wire bus. Data is first written to the scratchpad using the Write Scratchpad [4Eh] command.  
It can then be verified by using the Read Scratchpad [BEh] command. After the data has been verified, a  
Copy Scratchpad [48h] command will transfer the data to the nonvolatile (E2) RAM. This process insures  
data integrity when modifying memory. The DS18B20 EEPROM is rated for a minimum of 50,000  
writes and 10 years data retention at T = +55°C.  
The scratchpad is organized as eight bytes of memory. The first 2 bytes contain the LSB and the MSB of  
the measured temperature information, respectively. The third and fourth bytes are volatile copies of TH  
and TL and are refreshed with every power-on reset. The fifth byte is a volatile copy of the configuration  
register and is refreshed with every power-on reset. The configuration register will be explained in more  
detail later in this section of the datasheet. The sixth, seventh, and eighth bytes are used for internal  
computations, and thus will not read out any predictable pattern.  
It is imperative that one writes TH, TL, and config in succession; i.e. a write is not valid if one writes  
only to TH and TL, for example, and then issues a reset. If any of these bytes must be written, all three  
must be written before a reset is issued.  
There is a ninth byte which may be read with a Read Scratchpad [BEh] command. This byte contains a  
cyclic redundancy check (CRC) byte which is the CRC over all of the eight previous bytes. This CRC is  
implemented in the fashion described in the section titled “CRC Generation”.  
Configuration Register  
The fifth byte of the scratchpad memory is the configuration register.  
It contains information which will be used by the device to determine the resolution of the temperature to  
digital conversion. The bits are organized as shown in Figure 7.  
DS18B20 CONFIGURATION REGISTER Figure 7  
0
R1 R0  
1
1
1
1
1
MSb  
LSb  
Bits 0-4 are don’t cares on a write but will always read out “1”.  
Bit 7 is a don’t care on a write but will always read out “0”.  
8 of 27  
DS18B20  
R0, R1: Thermometer resolution bits. Table 3 below defines the resolution of the digital thermometer,  
based on the settings of these 2 bits. There is a direct tradeoff between resolution and conversion time, as  
depicted in the AC Electrical Characteristics. The factory default of these EEPROM bits is R0=1 and  
R1=1 (12-bit conversions).  
Thermometer Resolution Configuration Table 3  
R1  
R0  
Thermometer  
Resolution  
9 bit  
Max Conversion  
Time  
0
0
1
1
0
1
0
1
93.75 ms  
(tconv/8)  
(tconv/4)  
(tconv/2)  
10 bit  
11 bit  
12 bit  
187.5 ms  
375 ms  
750 ms  
(tconv)  
DS18B20 MEMORY MAP Figure 8  
SCRATCHPAD  
BYTE  
E2 RAM  
TEMPERATURE LSB  
0
TEMPERATURE MSB  
TH/USER BYTE 1  
TL/USER BYTE 2  
CONFIG  
1
2
TH/USER BYTE 1  
TL/USER BYTE 2  
CONFIG  
3
4
RESERVED  
5
6
7
RESERVED  
RESERVED  
8
CRC  
9 of 27  
DS18B20  
1-WIRE BUS SYSTEM  
The 1-Wire bus is a system which has a single bus master and one or more slaves. The DS18B20  
behaves as a slave. The discussion of this bus system is broken down into three topics: hardware  
configuration, transaction sequence, and 1-Wire signaling (signal types and timing).  
HARDWARE CONFIGURATION  
The 1-Wire bus has only a single line by definition; it is important that each device on the bus be able to  
drive it at the appropriate time. To facilitate this, each device attached to the 1-Wire bus must have open  
drain or 3-state outputs. The 1-Wire port of the DS18B20 (DQ pin) is open drain with an internal circuit  
equivalent to that shown in Figure 9. A multidrop bus consists of a 1-Wire bus with multiple slaves  
attached. The 1-Wire bus requires a pullup resistor of approximately 5 kΩ.  
HARDWARE CONFIGURATION Figure 9  
+3V - +5V  
BUS MASTER  
RX  
DS18B20 1-WIRE PORT  
4.7K  
RX  
TX  
5 µA  
Typ.  
TX  
100 OHM  
MOSFET  
RX = RECEIVE  
TX = TRANSMIT  
The idle state for the 1-Wire bus is high. If for any reason a transaction needs to be suspended, the bus  
MUST be left in the idle state if the transaction is to resume. Infinite recovery time can occur between  
bits so long as the 1-Wire bus is in the inactive (high) state during the recovery period. If this does not  
occur and the bus is left low for more than 480 µs, all components on the bus will be reset.  
TRANSACTION SEQUENCE  
The protocol for accessing the DS18B20 via the 1-Wire port is as follows:  
ꢀ Initialization  
ꢀ ROM Function Command  
ꢀ Memory Function Command  
ꢀ Transaction/Data  
10 of 27  
DS18B20  
INITIALIZATION  
All transactions on the 1-Wire bus begin with an initialization sequence. The initialization sequence  
consists of a reset pulse transmitted by the bus master followed by presence pulse(s) transmitted by the  
slave(s).  
The presence pulse lets the bus master know that the DS18B20 is on the bus and is ready to operate. For  
more details, see the “1-Wire Signaling” section.  
ROM FUNCTION COMMANDS  
Once the bus master has detected a presence, it can issue one of the five ROM function commands. All  
ROM function commands are 8 bits long. A list of these commands follows (refer to flowchart in  
Figure 5):  
Read ROM [33h]  
This command allows the bus master to read the DS18B20’s 8-bit family code, unique 48-bit serial  
number, and 8-bit CRC. This command can only be used if there is a single DS18B20 on the bus. If  
more than one slave is present on the bus, a data collision will occur when all slaves try to transmit at the  
same time (open drain will produce a wired AND result).  
Match ROM [55h]  
The match ROM command, followed by a 64-bit ROM sequence, allows the bus master to address a  
specific DS18B20 on a multidrop bus. Only the DS18B20 that exactly matches the 64-bit ROM sequence  
will respond to the following memory function command. All slaves that do not match the 64-bit ROM  
sequence will wait for a reset pulse. This command can be used with a single or multiple devices on the  
bus.  
Skip ROM [CCh]  
This command can save time in a single drop bus system by allowing the bus master to access the  
memory functions without providing the 64-bit ROM code. If more than one slave is present on the bus  
and a Read command is issued following the Skip ROM command, data collision will occur on the bus as  
multiple slaves transmit simultaneously (open drain pulldowns will produce a wired AND result).  
Search ROM [F0h]  
When a system is initially brought up, the bus master might not know the number of devices on the  
1-Wire bus or their 64-bit ROM codes. The search ROM command allows the bus master to use a  
process of elimination to identify the 64-bit ROM codes of all slave devices on the bus.  
Alarm Search [ECh]  
The flowchart of this command is identical to the Search ROM command. However, the DS18B20 will  
respond to this command only if an alarm condition has been encountered at the last temperature  
measurement. An alarm condition is defined as a temperature higher than TH or lower than TL. The  
alarm condition remains set as long as the DS18B20 is powered up, or until another temperature  
measurement reveals a non-alarming value. For alarming, the trigger values stored in EEPROM are taken  
into account. If an alarm condition exists and the TH or TL settings are changed, another temperature  
conversion should be done to validate any alarm conditions.  
11 of 27  
DS18B20  
Example of a ROM Search  
The ROM search process is the repetition of a simple three-step routine: read a bit, read the complement  
of the bit, then write the desired value of that bit. The bus master performs this simple, three-step routine  
on each bit of the ROM. After one complete pass, the bus master knows the contents of the ROM in one  
device. The remaining number of devices and their ROM codes may be identified by additional passes.  
The following example of the ROM search process assumes four different devices are connected to the  
same 1-Wire bus. The ROM data of the four devices is as shown:  
ROM1  
ROM2  
ROM3  
ROM4  
00110101...  
10101010...  
11110101...  
00010001...  
The search process is as follows:  
1. The bus master begins the initialization sequence by issuing a reset pulse. The slave devices respond  
by issuing simultaneous presence pulses.  
2. The bus master will then issue the Search ROM command on the 1-Wire bus.  
3. The bus master reads a bit from the 1-Wire bus. Each device will respond by placing the value of the  
first bit of their respective ROM data onto the 1-Wire bus. ROM1 and ROM4 will place a 0 onto the  
1-Wire bus, i.e., pull it low. ROM2 and ROM3 will place a 1 onto the 1-Wire bus by allowing the  
line to stay high. The result is the logical AND of all devices on the line, therefore the bus master  
sees a 0. The bus master reads another bit. Since the Search ROM data command is being executed,  
all of the devices on the 1-Wire bus respond to this second read by placing the complement of the first  
bit of their respective ROM data onto the 1-Wire bus. ROM1 and ROM4 will place a 1 onto the  
1-Wire, allowing the line to stay high. ROM2 and ROM3 will place a 0 onto the 1-Wire, thus it will  
be pulled low. The bus master again observes a 0 for the complement of the first ROM data bit. The  
bus master has determined that there are some devices on the 1-Wire bus that have a 0 in the first  
position and others that have a 1.  
The data obtained from the two reads of the three-step routine have the following interpretations:  
00 There are still devices attached which have conflicting bits in this position.  
01 All devices still coupled have a 0-bit in this bit position.  
10 All devices still coupled have a 1-bit in this bit position.  
11 There are no devices attached to the 1-Wire bus.  
4. The bus master writes a 0. This deselects ROM2 and ROM3 for the remainder of this search pass,  
leaving only ROM1 and ROM4 connected to the 1-Wire bus.  
5. The bus master performs two more reads and receives a 0-bit followed by a 1-bit. This indicates that  
all devices still coupled to the bus have 0s as their second ROM data bit.  
6. The bus master then writes a 0 to keep both ROM1 and ROM4 coupled.  
7. The bus master executes two reads and receives two 0-bits. This indicates that both 1-bits and 0-bits  
exist as the 3rd bit of the ROM data of the attached devices.  
12 of 27  
DS18B20  
8. The bus master writes a 0-bit. This deselects ROM1, leaving ROM4 as the only device still  
connected.  
9. The bus master reads the remainder of the ROM bits for ROM4 and continues to access the part if  
desired. This completes the first pass and uniquely identifies one part on the 1-Wire bus.  
10. The bus master starts a new ROM search sequence by repeating steps 1 through 7.  
11. The bus master writes a 1-bit. This decouples ROM4, leaving only ROM1 still coupled.  
12. The bus master reads the remainder of the ROM bits for ROM1 and communicates to the underlying  
logic if desired. This completes the second ROM search pass, in which another of the ROMs was  
found.  
13. The bus master starts a new ROM search by repeating steps 1 through 3.  
14. The bus master writes a 1-bit. This deselects ROM1 and ROM4 for the remainder of this search pass,  
leaving only ROM2 and ROM3 coupled to the system.  
15. The bus master executes two Read time slots and receives two 0s.  
16. The bus master writes a 0-bit. This decouples ROM3 leaving only ROM2.  
17. The bus master reads the remainder of the ROM bits for ROM2 and communicates to the underlying  
logic if desired. This completes the third ROM search pass, in which another of the ROMs was  
found.  
18. The bus master starts a new ROM search by repeating steps 13 through 15.  
19. The bus master writes a 1-bit. This decouples ROM2, leaving only ROM3.  
20. The bus master reads the remainder of the ROM bits for ROM3 and communicates to the underlying  
logic if desired. This completes the fourth ROM search pass, in which another of the ROMs was  
found.  
NOTE:  
The bus master learns the unique ID number (ROM data pattern) of one 1-Wire device on each ROM  
Search operation. The time required to derive the part’s unique ROM code is:  
960 µs + (8 + 3 x 64) 61 µs = 13.16 ms  
The bus master is therefore capable of identifying 75 different 1-Wire devices per second.  
I/O SIGNALING  
The DS18B20 requires strict protocols to insure data integrity. The protocol consists of several types of  
signaling on one line: reset pulse, presence pulse, write 0, write 1, read 0, and read 1. All of these signals,  
with the exception of the presence pulse, are initiated by the bus master.  
13 of 27  
DS18B20  
The initialization sequence required to begin any communication with the DS18B20 is shown in  
Figure 11. A reset pulse followed by a presence pulse indicates the DS18B20 is ready to send or receive  
data given the correct ROM command and memory function command.  
The bus master transmits (TX) a reset pulse (a low signal for a minimum of 480 µs). The bus master then  
releases the line and goes into a receive mode (RX). The 1-Wire bus is pulled to a high state via the 5k  
pullup resistor. After detecting the rising edge on the DQ pin, the DS18B20 waits 15-60 µs and then  
transmits the presence pulse (a low signal for 60-240 µs).  
MEMORY COMMAND FUNCTIONS  
The following command protocols are summarized in Table 4, and by the flowchart of Figure 10.  
Write Scratchpad [4Eh]  
This command writes to the scratchpad of the DS18B20, starting at the TH register. The next 3 bytes  
written will be saved in scratchpad memory at address locations 2 through 4. All 3 bytes must be written  
before a reset is issued.  
Read Scratchpad [BEh]  
This command reads the contents of the scratchpad. Reading will commence at byte 0 and will continue  
through the scratchpad until the ninth (byte 8, CRC) byte is read. If not all locations are to be read, the  
master may issue a reset to terminate reading at any time.  
Copy Scratchpad [48h]  
This command copies the scratchpad into the E2 memory of the DS18B20, storing the temperature trigger  
bytes in nonvolatile memory. If the bus master issues read time slots following this command, the  
DS18B20 will output 0 on the bus as long as it is busy copying the scratchpad to E2; it will return a 1  
when the copy process is complete. If parasite-powered, the bus master has to enable a strong pullup for  
at least 10 ms immediately after issuing this command. The DS18B20 EEPROM is rated for a minimum  
of 50,000 writes and 10 years data retention at T=+55°C.  
Convert T [44h]  
This command begins a temperature conversion. No further data is required. The temperature  
conversion will be performed and then the DS18B20 will remain idle. If the bus master issues read time  
slots following this command, the DS18B20 will output 0 on the bus as long as it is busy making a  
temperature conversion; it will return a 1 when the temperature conversion is complete. If parasite-  
powered, the bus master has to enable a strong pullup for a period greater than tconv immediately after  
issuing this command.  
Recall E2 [B8h]  
This command recalls the temperature trigger values and configuration register stored in E2 to the  
scratchpad. This recall operation happens automatically upon power-up to the DS18B20 as well, so valid  
data is available in the scratchpad as soon as the device has power applied. With every read data time slot  
issued after this command has been sent, the device will output its temperature converter busy flag:  
0=busy, 1=ready.  
Read Power Supply [B4h]  
With every read data time slot issued after this command has been sent to the DS18B20, the device will  
signal its power mode: 0=parasite power, 1=external power supply provided.  
14 of 27  
DS18B20  
MEMORY FUNCTIONS FLOW CHART Figure 10  
15 of 27  
DS18B20  
MEMORY FUNCTIONS FLOW CHART Figure 10 (cont’d)  
16 of 27  
DS18B20  
MEMORY FUNCTIONS FLOW CHART Figure 10 (cont’d)  
17 of 27  
DS18B20  
INITIALIZATION PROCEDURE “RESET AND PRESENCE PULSES” Figure 11  
DS18B20 COMMAND SET Table 4  
1-WIRE BUS  
AFTER ISSUING  
INSTRUCTION  
DESCRIPTION  
PROTOCOL  
PROTOCOL  
NOTES  
TEMPERATURE CONVERSION COMMANDS  
Convert T  
Initiates temperature  
conversion.  
44h  
<read temperature busy  
status>  
1
MEMORY COMMANDS  
Read Scratchpad  
Write Scratchpad  
Reads bytes from  
scratchpad and reads  
CRC byte.  
BEh  
<read data up to 9 bytes>  
Writes bytes into  
scratchpad at addresses 2  
through 4 (TH and TL  
temperature triggers and  
config).  
Copies scratchpad into  
nonvolatile memory  
(addresses 2 through 4  
only).  
Recalls values stored in  
nonvolatile memory into  
scratchpad (temperature  
triggers).  
4Eh  
<write data into 3 bytes  
at addr. 2 through. 4>  
3
2
Copy Scratchpad  
Recall E2  
48h  
B8h  
B4h  
<read copy status>  
<read temperature busy  
status>  
Read Power Supply Signals the mode of  
DS18B20 power supply  
<read supply status>  
to the master.  
18 of 27  
DS18B20  
NOTES:  
1. Temperature conversion takes up to 750 ms. After receiving the Convert T protocol, if the part does  
not receive power from the VDD pin, the DQ line for the DS18B20 must be held high for at least a  
period greater than tconv to provide power during the conversion process. As such, no other activity  
may take place on the 1-Wire bus for at least this period after a Convert T command has been issued.  
2. After receiving the Copy Scratchpad protocol, if the part does not receive power from the VDD pin, the  
DQ line for the DS18B20 must be held high for at least 10 ms to provide power during the copy  
process. As such, no other activity may take place on the 1-Wire bus for at least this period after a  
Copy Scratchpad command has been issued.  
3. All 3 bytes must be written before a reset is issued.  
READ/WRITE TIME SLOTS  
DS18B20 data is read and written through the use of time slots to manipulate bits and a command word to  
specify the transaction.  
Write Time Slots  
A write time slot is initiated when the host pulls the data line from a high logic level to a low logic level.  
There are two types of write time slots: Write 1 time slots and Write 0 time slots. All write time slots  
must be a minimum of 60 µs in duration with a minimum of a 1-µs recovery time between individual  
write cycles.  
The DS18B20 samples the DQ line in a window of 15 µs to 60 µs after the DQ line falls. If the line is  
high, a Write 1 occurs. If the line is low, a Write 0 occurs (see Figure 12).  
For the host to generate a Write 1 time slot, the data line must be pulled to a logic low level and then  
released, allowing the data line to pull up to a high level within 15 µs after the start of the write time slot.  
For the host to generate a Write 0 time slot, the data line must be pulled to a logic low level and remain  
low for 60 µs.  
Read Time Slots  
The host generates read time slots when data is to be read from the DS18B20. A read time slot is initiated  
when the host pulls the data line from a logic high level to logic low level. The data line must remain at a  
low logic level for a minimum of 1 µs; output data from the DS18B20 is valid for 15 µs after the falling  
edge of the read time slot. The host therefore must stop driving the DQ pin low in order to read its state  
15 µs from the start of the read slot (see Figure 12). By the end of the read time slot, the DQ pin will pull  
back high via the external pullup resistor. All read time slots must be a minimum of 60 µs in duration  
with a minimum of a 1-µs recovery time between individual read slots.  
Figure 12 shows that the sum of TINIT, TRC, and TSAMPLE must be less than 15 µs. Figure 14 shows that  
system timing margin is maximized by keeping TINIT and TRC as small as possible and by locating the  
master sample time towards the end of the 15-µs period.  
19 of 27  
DS18B20  
READ/WRITE TIMING DIAGRAM Figure 12  
20 of 27  
DS18B20  
DETAILED MASTER READ 1 TIMING Figure 13  
RECOMMENDED MASTER READ 1 TIMING Figure 14  
21 of 27  
DS18B20  
Related Application Notes  
The following Application Notes can be applied to the DS18B20. These notes can be obtained from the  
Dallas Semiconductor “Application Note Book,” via our website at http://www.dalsemi.com/.  
Application Note 27: “Understanding and Using Cyclic Redundancy Checks with Dallas Semiconductor  
Touch Memory Product”  
Application Note 55: “Extending the Contact Range of Touch Memories”  
Application Note 74: “Reading and Writing Touch Memories via Serial Interfaces”  
Application Note 104: “Minimalist Temperature Control Demo”  
Application Note 106: “Complex MicroLANs”  
Application Note 108: “MicroLAN - In the Long Run”  
Sample 1-Wire subroutines that can be used in conjunction with AN74 can be downloaded from the  
website or our Anonymous FTP Site.  
MEMORY FUNCTION EXAMPLE Table 5  
Example: Bus Master initiates temperature conversion, then reads temperature (parasite power assumed).  
MASTER MODE DATA (LSB FIRST)  
COMMENTS  
Reset pulse (480-960 µs).  
Presence pulse.  
TX  
RX  
TX  
TX  
TX  
TX  
Reset  
Presence  
55h  
Issue “Match ROM” command.  
<64-bit ROM code> Issue address for DS18B20.  
44h  
Issue “ Convert T” command.  
<I/O LINE HIGH>  
I/O line is held high for at least a period of time greater  
than tconv by bus master to allow conversion to complete.  
Reset pulse.  
Presence pulse.  
Issue “Match ROM” command.  
TX  
RX  
TX  
TX  
TX  
RX  
Reset  
Presence  
55h  
<64-bit ROM code> Issue address for DS18B20.  
BEh  
<9 data bytes>  
Issue “Read Scratchpad” command.  
Read entire scratchpad plus CRC; the master now  
recalculates the CRC of the eight data bytes received  
from the scratchpad, compares the CRC calculated and  
the CRC read. If they match, the master continues; if  
not, this read operation is repeated.  
TX  
RX  
Reset  
Presence  
Reset pulse.  
Presence pulse, done.  
22 of 27  
DS18B20  
MEMORY FUNCTION EXAMPLE Table 6  
Example: Bus Master writes memory (parasite power and only one DS18B20 assumed).  
MASTER MODE DATA (LSB FIRST)  
COMMENTS  
TX  
RX  
TX  
TX  
TX  
TX  
RX  
TX  
TX  
RX  
Reset  
Presence  
CCh  
Reset pulse.  
Presence pulse.  
Skip ROM command.  
Write Scratchpad command.  
Writes three bytes to scratchpad (TH, TL, and config).  
Reset pulse.  
Presence pulse.  
Skip ROM command.  
Read Scratchpad command.  
Read entire scratchpad plus CRC. The master now  
recalculates the CRC of the eight data bytes received  
from the scratchpad, compares the CRC and the two  
other bytes read back from the scratchpad. If data match,  
the master continues; if not, repeat the sequence.  
Reset pulse.  
Presence pulse.  
Skip ROM command.  
Copy Scratchpad command; after issuing this command,  
the master must wait 10 ms for copy operation to  
complete.  
4Eh  
<3 data bytes>  
Reset  
Presence  
CCh  
BEh  
<9 data bytes>  
TX  
RX  
TX  
TX  
Reset  
Presence  
CCh  
48h  
TX  
RX  
Reset  
Presence  
Reset pulse.  
Presence pulse, done.  
23 of 27  
DS18B20  
ABSOLUTE MAXIMUM RATINGS*  
Voltage on Any Pin Relative to Ground  
Operating Temperature  
-0.5V to +6.0V  
-55°C to +125°C  
Storage Temperature  
-55°C to +125°C  
Soldering Temperature  
See J-STD-020A specification  
* This is a stress rating only and functional operation of the device at these or any other conditions above  
those indicated in the operation sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods of time may affect reliability.  
RECOMMENDED DC OPERATING CONDITIONS  
PARAMETER  
Supply Voltage  
Data Pin  
SYMBOL  
VDD  
CONDITION  
MIN  
3.0  
-0.3  
TYP MAX UNITS NOTES  
Local Power  
5.5  
+5.5  
VCC+  
0.3  
V
V
1
1
DQ  
Logic 1  
Logic 0  
VIH  
VIL  
2.2  
V
V
1,2  
-0.3  
+0.8  
1,3,7  
DC ELECTRICAL CHARACTERISTICS  
(-55°C to +125°C; VDD=3.0V to 5.5V)  
PARAMETER  
SYMBOL  
CONDITION  
MIN  
TYP MAX UNITS NOTES  
Thermometer Error  
tERR  
±½  
°C  
-10°C to +85°C  
-55°C to +125°C  
Local Power  
Parasite Power  
±2  
5.5  
Input Logic High  
VIH  
2.2  
3.0  
-0.3  
-4.0  
V
V
V
mA  
nA  
mA  
1,2  
1,2  
1,3,7  
1
6,8  
4
Input Logic Low  
Sink Current  
Standby Current  
Active Current  
DQ-Input Load  
Current  
VIL  
IL  
IDDS  
IDD  
+0.8  
VI/O=0.4V  
750  
1
1000  
1.5  
IDQ  
5
µA  
5
AC ELECTRICAL CHARACTERISTICS: NV MEMORY  
(-55°C to +125°C; VDD=3.0V to 5.5V)  
PARAMETER  
NV Write Cycle  
Time  
SYMBOL  
twr  
CONDITION  
MIN  
TYP MAX UNITS NOTES  
2
10  
ms  
EEPROM Writes  
EEPROM Data  
Retention  
NEEWR  
tEEDR  
-55°C to +55°C  
-55°C to +55°C  
50k  
10  
writes  
years  
24 of 27  
DS18B20  
AC ELECTRICAL CHARACTERISTICS:  
(-55°C to +125°C; VDD=3.0V to 5.5V)  
PARAMETER  
SYMBOL CONDITION MIN  
TYP MAX UNITS NOTES  
Temperature  
Conversion  
Time  
tCONV  
9 bit  
93.75  
ms  
10 bit  
11 bit  
12 bit  
187.5  
375  
750  
Time Slot  
tSLOT  
tREC  
rLOW0  
tLOW1  
tRDV  
tRSTH  
tRSTL  
tPDHIGH  
tPDLOW  
CIN/OUT  
60  
1
60  
1
120  
µs  
µs  
µs  
µs  
µs  
µs  
µs  
µs  
µs  
pF  
Recovery Time  
Write 0 Low Time  
Write 1 Low Time  
Read Data Valid  
Reset Time High  
Reset Time Low  
Presence Detect High  
Presence Detect Low  
Capacitance  
120  
15  
15  
480  
480  
15  
9
60  
240  
25  
60  
NOTES:  
1. All voltages are referenced to ground.  
2. Logic one voltages are specified at a source current of 1 mA.  
3. Logic zero voltages are specified at a sink current of 4 mA.  
4. Active current refers to either temperature conversion or writing to the E2 memory. Writing to E2  
memory consumes approximately 200 µA for up to 10 ms.  
5. Input load is to ground.  
6. Standby current specified up to 70°C. Standby current typically is 3 µA at 125°C.  
7. To always guarantee a presence pulse under low voltage parasite power conditions, VILMAX may have  
to be reduced to as much as 0.5V.  
8. To minimize IDDS, DQ should be: GND ≤ DQ ≤ GND +0.3V or VDD – 0.3V ≤ DQ ≤ VDD.  
9. Under parasite power, the max tRSTL before a power on reset occurs is 960 µS.  
25 of 27  
DS18B20  
26 of 27  
DS18B20  
TYPICAL PERFORMANCE CURVE  
DS18B20 Typical Error Curve  
0.5  
0.4  
0.3  
0.2  
0.1  
0
σ
+3 Error  
0
10  
20  
30  
40  
50  
60  
70  
-0.1  
-0.2  
-0.3  
-0.4  
-0.5  
Mean Error  
σ
-3 Error  
Reference Temp (C)  
27 of 27  
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