ABB Semiconductors AG
5SDA 09D2604
On-state
IFAVM
IFRMS
IFSM
Max. average on-state current
1020 A
1600 A
11.5 kA
12.5 kA
Half sine wave, TC = 85°C
Max. RMS on-state current
Max. peak non-repetitive
surge current
tp
tp
tp
tp
IF
=
=
=
=
10 ms
8.3 ms
10 ms
8.3 ms
Tj =
160°C
After surge:
I2t
Limiting load integral
A2s
A2s
VD = VR = 0V
660×103
650×103
VF0
Threshold voltage
Slope resistance
On-state voltage
On-state voltage
0.87 V
= 1000 - 3000 A
Tj =
Tj =
160°C
25°C
rF
0.39
mW
VF min
VF max
1.35 V
1.50 V
IF
=
1800 A
Thermal
Tj
Storage and operating
-40...160°C
junction temperature range
Thermal resistance
junction to case
RthJC
80 K/kW Anode side cooled
80 K/kW Cathode side cooled
40 K/kW Double side cooled
16 K/kW Single side cooled
8 K/kW Double side cooled
RthCH
Thermal resistance case to
heat sink
45
Analytical function for transient thermal impedance:
Fm =10...12 kN
40
35
30
25
20
15
10
5
Double Side Cooling
Zth
4
[K/kW]
Z
thJC(t) = R
i
(1-e-t/t i )
å
i=1
i
1
2
3
4
R (K/kW)
t i (s)
20.95
0.396
10.57
0.072
7.15
1.33
0
2
3
4
2
3
4
2
3
4
2
3
4
10-3
5 6 7 10-2
5 6 7 10-1
5 5 6 100
5 6 7 101
0.009
0.0044
t [s]
For a given case temperature Tc at ambient temperature Ta the
maximum on-state current can be calculated as follows:
IFAVM (A)
T max (°C)
P (W)
Tc (°C)
VF0 (V)
Ta (°C)
rF (W)
Rthja (K/kW)
RthJC (K/kW)
-VF0 + (VF0)2 + 4*f2 *r
*P
f
f2 =
1
for DC current
I
FAVM
=
2*f2 *r
f
2.5
3.1
6
for half-sine wave
for 120°el., sine
for 60° el., sine
T
J max - T
C
T
J max - T
A
where P =
or P =
R
thjc
Rthja
Doc. No. 5SYA 1121 - 01 Apr-98
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
