5SDD 0120C0200
On-state
IFAVM
IFRMS
IFSM
Max. average on-state current
11000 A
17300 A
85000 A
92500 A
36100 kA2s tp =
35700 kA2s tp =
Half sine wave, Tc = 85 °C
Max. RMS on-state current
Max. peak non-repetitive surge current
tp =
tp =
10 ms Before surge
8.3 ms Tj = 170 °C
10 ms After surge:
òI2dt
Max. surge current integral
8.3 ms
VR » 0V
VF max Maximum on-state voltage
0.92 V
0.75 V
IF =
Approximation for Tj = 170 °C
IF = 8 - 18 kA
8000 A
Tj = 170 °C
£
VF0
rF
Threshold voltage
Slope resistance
0.020
mW
Thermal characteristics
Tj
Operating junction temperature range
-40...170 °C
-40…170 °C
Tstg
Storage temperature range
Rth(j-c)
Thermal resistance
junction to case
12 K/kW Anode side cooled
12 K/kW Cathode side cooled
6 K/kW Double side cooled
6 K/kW Single side cooled
£
£
£
£
FM = 35…40 kN
Rth(c-h)
Thermal resistance
case to heatsink
3 K/kW Double side cooled
£
4
ZthJC [K/kW]
8
R )
(1 - e - t /ti
i
Z th (j-c )(t) =
Double sided cooling
Fm = 35...40 kN
å
i =1
6
4
2
i
1
2
3
4
Ri (K/kW)
3.37
0.095
1.50
0.63
0.67
0.048
0.0035
0.001
t i (s)
FM = 35…40 kN
Double side cooled
0
10-3
10-2
10-1
100
t [s]
Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 2 of 4
Doc. No. 5SYA1157-01 July 06
