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5SDD11D2800

型号：

5SDD11D2800

描述：

整流器器二极管[ Rectifier Diode ]

品牌：

ABB[ THE ABB GROUP ]

页数：

6 页

PDF大小：

110 K

下载PDF手册
VRSM  
IF(AV)M  
IF(RMS)  
IFSM  
=
=
=
=
=
=
3000 V  
1285 A  
Rectifier Diode  
5SDD 11D2800  
2019 A  
15×103 A  
VF0  
0.933 V  
rF  
0.242  
mW  
Doc. No. 5SYA1166-00 Okt. 03  
· Very low on-state losses  
· Optimum power handling capability  
Blocking  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
Value  
2800  
3000  
Unit  
V
Repetetive peak reverse voltage  
VRRM  
f = 50 Hz, tp = 10ms, Tj = -40...160°C  
f = 5 Hz, tp = 10ms, Tj = -40...160°C  
Non - repetetive peak reverse voltage VRSM  
V
Characteristic values  
Parameter  
Symbol Conditions  
IRRM VRRM, Tj = 160°C  
min  
typ  
typ  
max  
30  
Unit  
Max. (reverse) leakage current  
mA  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
max  
Unit  
kN  
m/s2  
m/s2  
Mounting force  
Acceleration  
Acceleration  
FM  
8
10  
12  
50  
a
a
Device unclamped  
Device clamped  
100  
Characteristic values  
Parameter  
Symbol Conditions  
min  
25.5  
typ  
0.3  
max  
26.5  
Unit  
kg  
Weight  
m
Housing thickness  
Surface creepage distance  
Air strike distance  
H
FM = 10 kN, Ta = 25 °C  
mm  
mm  
mm  
DS  
Da  
33  
18  
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SDD 11D2800  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
IF(AV)M 50 Hz, Half sine wave, TC = 85 °C  
min  
typ  
max  
1285  
Unit  
Max. average on-state  
current  
A
2019  
15×103  
Max. RMS on-state current IF(RMS)  
A
A
Max. peak non-repetitive  
surge current  
IFSM  
tp = 10 ms, Tj = 160°C,  
VR = 0 V  
1.125×106  
16×103  
Limiting load integral  
I2t  
A2s  
A
Max. peak non-repetitive  
surge current  
IFSM  
tp = 8.3 ms, Tj = 160°C,  
VR = 0 V  
1.066×106  
Limiting load integral  
I2t  
A2s  
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
V
1.3  
On-state voltage  
Threshold voltage  
Slope resistance  
VF  
IF = 1500 A, Tj = 160°C  
0.933  
0.242  
V(T0)  
rT  
Tj = 160°C  
IT = 1500...4500 A  
V
mW  
Switching  
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Qrr  
2200  
3000  
mAs  
Recovery charge  
diF/dt = -30 A/µs, VR = 100 V  
IFRM = 1000 A, Tj = 160°C  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1166-00 Okt. 03  
page 2 of 6  
5SDD 11D2800  
Thermal  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
Unit  
Operating junction  
temperature range  
Tvj  
-40  
160  
°C  
Storage temperature range Tstg  
Characteristic values  
Parameter  
-40  
175  
°C  
Symbol Conditions  
min  
max  
Unit  
Thermal resistance junction Rth(j-c)  
to case  
Double-side cooled  
Fm = 8...12 kN  
32  
K/kW  
Rth(j-c)A Anode-side cooled  
Fm = 8...12 kN  
50  
88  
8
K/kW  
K/kW  
K/kW  
K/kW  
Rth(j-c)C Cathode-side cooled  
Fm = 8...12 kN  
Thermal resistance case to Rth(c-h)  
heatsink  
Double-side cooled  
Fm = 8...12 kN  
Rth(c-h)  
Single-side cooled  
Fm = 8...12 kN  
16  
Analytical function for transient thermal  
impedance:  
n
-t/ti  
Z
(t) = R (1-e )  
å
th(j-c)  
th i  
i=1  
i
1
2
3
4
Rth i(K/kW) 11.600  
0.7033  
10.110  
0.2185  
7.870  
0.0588  
2.410  
0.0042  
ti(s)  
Fig. 1 Transient thermal impedance junction-to-  
case.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1166-00 Okt. 03  
page 3 of 6  
5SDD 11D2800  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
30  
25  
20  
15  
10  
5
3
I FSM  
25°C  
25 °C 160 °C  
2,5  
160°C  
i2dt  
25°C  
2
160 °C  
1,5  
1
0,5  
0
0
0
1
2
3
V F  
( V )  
1
10  
100  
t ( ms )  
Fig. 2 Max. on-state characteristics.  
Fig. 3 Surge forward current vs. pulse length. Half  
sine wave, single pulse, VR = 0 V  
2500  
2500  
60° 120° 180°  
= 30° 60° 90° 120° 180°  
y
270°  
DC  
DC  
2000  
1500  
1000  
500  
0
2000  
1500  
1000  
500  
0
0
400  
800  
1200  
1600  
0
500  
1000  
1500  
IFAV  
I FAV  
( A )  
( A )  
Fig. 4 Forward power loss vs. average forward  
Fig. 5 Forward power loss vs. average forward  
current, sine waveform, f = 50 Hz  
current, square waveform, f = 50 Hz  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1166-00 Okt. 03  
page 4 of 6  
5SDD 11D2800  
170  
160  
150  
140  
130  
120  
110  
100  
90  
170  
160  
150  
140  
130  
120  
110  
100  
90  
DC  
DC  
270°  
80  
80  
70  
70  
180°  
60  
60  
60°  
120°180°  
1600  
( A )  
= 30° 60° 90° 120°  
y
0
400  
800  
1200  
0
400  
800  
1200  
1600  
IFAV  
( A )  
IFAV  
Fig. 6 Max. case temperature vs aver. forward  
Fig. 7 Max. case temperature vs aver. forward  
current, sine waveform, f = 50 Hz  
current, square waveform, f = 50 Hz  
1000  
10000  
1000  
max  
100  
max  
min  
min  
100  
10  
1
10 dIF/dt  
100  
( A/µs )  
dIF /dt  
( A/µs )  
1
10  
100  
Fig. 8 Reverse recovery charge vs. dIF/dt,  
Fig. 9 Peak reverse recovery current vs. diF/dt,  
IF= 1000 A; Tj = Tjmax, limit values  
IF = 1000 A; Tj = Tjmax, limit values  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1166-00 Okt. 03  
page 5 of 6  
5SDD 11D2800  
Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.  
Related application notes:  
Doc. Nr  
Titel  
5SYA 2020  
5SYA 2029  
5SYA 2036  
Design of RC-Snubbers for Phase Control Applications  
Designing Large Rectifiers with High Power Diodes  
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors  
Please refer to http://www.abb.com/semiconductors for actual versions.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1166-00 Okt. 03  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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