5SDD 40B0200
On-state
IFAVM
IFRMS
IFSM
Max. average on-state current
6130 A
9620 A
Half sine wave, Tc = 85 °C
Max. RMS on-state current
Max. peak non-repetitive surge current
45000 A
tp =
tp =
10 ms Before surge
8.3 ms Tj = 170 °C
10 ms After surge:
48000 A
Max. surge current integral
10125 kA2s tp =
9600 kA2s tp =
òI2dt
8.3 ms
VR » 0V
VF max Maximum on-state voltage
1.15 V
0.80 V
IF =
Approximation for Tj = 170 °C
IF = 5 - 15 kA
5000 A
Tj = 25 °C
£
VF0
rF
Threshold voltage
Slope resistance
0.030
mW
Thermal characteristics
Tj
Operating junction temperature range
-40...170 °C
-40…170 °C
Tstg
Storage temperature range
Rth(j-c)
Thermal resistance
junction to case
20 K/kW Anode side cooled
20 K/kW Cathode side cooled
10 K/kW Double side cooled
10 K/kW Single side cooled
£
£
£
£
FM = 20…24 kN
Rth(c-h)
Thermal resistance
case to heatsink
5 K/kW Double side cooled
£
4
ZthJC [K/kW]
R )
(1 - e - t /ti
i
12
F
= 20...24 kN
Z th (j-c )(t) =
Double Side Cooled
m
å
10
8
i =1
i
1
2
3
4
6
Ri (K/kW)
5.28
0.07
3.30
0.87
0.55
4
0.039
0.0034 0.00013
t i (s)
FM = 20… 24 kN
Double side cooled
2
0
10-3
10-2
10-1
100
t [s]
Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 2 of 4
Doc. No. 5SYA1156-02 July 06
