VRSM
IF(AV)M
IF(RMS)
IFSM
=
=
=
=
=
=
2800 V
5380 A
8450 A
65×103 A
0.77 V
Rectifier Diode
5SDD 51L2800
VF0
rF
0.082
mW
Doc. No. 5SYA1103-01 Feb. 05
· Patented free-floating silicon technology
· Very low on-state losses
· High average and surge current.
Blocking
Maximum rated values 1)
Parameter
Symbol Conditions
Value
2000
2800
3000
Unit
V
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Non-repetitive peak reverse voltage
VRRM
VRSM
VRSM
f = 50 Hz, tp = 10ms, Tj = 175°C
f = 5 Hz, tp = 10ms, Tj = 175°C
V
V
f = 50 Hz, tp £ 5ms, Tj = ...175°C
Characteristic values
Parameter
Symbol Conditions
IRRM VRRM, Tj = 175°C
min
typ
typ
max
400
Unit
Max. (reverse) leakage current
mA
Tvj = -40°C reduces VRSM and VRRM by 5%.
Mechanical data
Maximum rated values 1)
Parameter
Symbol Conditions
min
max
Unit
kN
m/s2
m/s2
Mounting force
Acceleration
Acceleration
FM
a
63
70
77
50
Device unclamped
Device clamped
a
100
Characteristic values
Parameter
Symbol Conditions
min
25.7
typ
max
Unit
kg
Weight
m
1.45
26.3
Housing thickness
Surface creepage distance
Air strike distance
H
FM = 70 kN, Ta = 25 °C
mm
mm
mm
DS
Da
35
14
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
