VRRM
IFAVM
IFSM
VF0
=
=
2500 V
490 A
Fast Recovery Diode
5SDF 05D2501
= 8.5×103 A
=
=
=
1.4 V
0.52
rF
mΩ
1100 V
VDClink
Doc. No. 5SYA1112-03 Jan. 03
• Patented free-floating silicon technology
• Low switching losses
• Optimized for use as snubber diode in GTO
converters
• Industry standard press-pack ceramic housing,
hermetically cold-welded
• Cosmic radiation withstand rating
Blocking
Maximum rated values 1)
Parameter
Symbol Conditions
Value
2500
1100
Unit
V
V
Repetetive peak reverse voltage
VRRM
f = 50 Hz, tp = 10ms, Tj = 125°C
Permanent DC voltage for 100 FIT
VDClink
Ambient cosmic radiation at sea level in open
failure rate
air. (100% Duty)
Permanent DC voltage for 100 FIT
failure rate
VDClink
Ambient cosmic radiation at sea level in open
air. (5% Duty)
1500
V
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
mA
Repetitive peak reverse current
IRRM
VR = VRRM, Tj = 125°C
50
Mechanical data
Maximum rated values 1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Parameter
Symbol Conditions
FM
min
typ
max
12
50
200
Unit
10
11
kN
a
a
Device unclamped
Device clamped
m/s2
m/s2
Symbol Conditions
m
min
typ
0.25
max
Unit
Weight
kg
Housing thickness
Pole-piece diameter
Surface creepage distance
Air strike distance
H
26
34
mm
mm
mm
mm
DP
DS
Da
30
20
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
