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5SDF10H4503

型号：

5SDF10H4503

描述：

快恢复二极管[ Fast Recovery Diode ]

品牌：

ABB[ THE ABB GROUP ]

页数：

7 页

PDF大小：

369 K

下载PDF手册
VRRM  
IF(AV)M  
IFSM  
=
=
=
=
=
=
4500 V  
1100 A  
Fast Recovery Diode  
20×103 A  
5SDF 10H4503  
V(T0)  
rT  
1.75 V  
0.88  
mW  
VDClink  
2800 V  
Doc. No. 5SYA1163-01 Oct. 06  
· Patented free-floating technology  
· Industry standard housing  
· Cosmic radiation withstand rating  
· Low on-state and switching losses  
· Optimized for snubberless operation  
Blocking  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
Value  
Unit  
V
Repetitive peak reverse voltage  
VRRM  
f = 50 Hz, tp = 10ms, Tvj = 125°C  
4500  
2800  
Permanent DC voltage for 100 FIT  
failure rate  
VDC-link  
Ambient cosmic radiation at sea level in open  
air. (100% Duty)  
V
Permanent DC voltage for 100 FIT  
failure rate  
VDC-link  
Ambient cosmic radiation at sea level in open  
air. (5% Duty)  
3200  
V
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
mA  
Repetitive peak reverse current  
IRRM  
VR = VRRM, Tvj = 125°C  
50  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
46  
Unit  
Mounting force  
Acceleration  
Fm  
36  
40  
kN  
a
a
Device unclamped  
Device clamped  
50  
m/s2  
m/s2  
Acceleration  
200  
Characteristic values  
Parameter  
Symbol Conditions  
min  
26.0  
typ  
max  
Unit  
Weight  
m
0.83  
26.4  
kg  
Housing thickness  
Surface creepage distance  
Air strike distance  
H
mm  
mm  
mm  
DS  
Da  
33  
20  
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SDF 10H4503  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
IF(AV)M Half sine wave, TC = 70 °C  
min  
typ  
max  
1100  
Unit  
Max. average on-state  
current  
A
Max. RMS on-state current IF(RMS)  
1740  
20×103  
A
A
Max. peak non-repetitive  
surge current  
IFSM  
tp = 10 ms, Tvj = 125°C, VR = 0 V  
tp = 30 ms, Tvj = 125°C, VR = 0 V  
Limiting load integral  
I2t  
2×106 A2s  
12×103  
Max. peak non-repetitive  
surge current  
IFSM  
A
Limiting load integral  
Characteristic values  
Parameter  
I2t  
2.16×106 A2s  
Symbol Conditions  
min  
min  
typ  
max  
3.8  
Unit  
V
On-state voltage  
Threshold voltage  
Slope resistance  
VF  
IF = 2500 A, Tvj = 125°C  
3.1  
V(T0)  
rT  
Tvj = 125°C  
IF = 500...2500 A  
1.75  
0.88  
V
mW  
Turn-on  
Characteristic values  
Parameter  
Symbol Conditions  
VFRM dIF/dt = 600 A/µs, Tvj = 125°C  
dIF/dt = 3000 A/µs, Tvj = 125°C  
typ  
max  
80  
Unit  
V
Peak forward recovery  
voltage  
250  
V
Turn-off  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
min  
typ  
typ  
max  
Unit  
Max. decay rate of on-state di/dtcrit  
current  
Characteristic values  
IFM = 4000 A, Tvj = 125 °C  
VDC-link = 2800 V  
600  
A/ms  
Parameter  
Symbol Conditions  
max  
1520  
5250  
9.5  
Unit  
A
Reverse recovery current  
Reverse recovery charge  
Turn-off energy  
IRM  
Qrr  
Err  
IFM = 3300 A, VDC-Link = 2800 V  
-dIF/dt = 600 A/µs, LCL = 300 nH  
CCL = 10 µF, RCL = 0.65 W,  
µC  
J
Tvj = 125°C, DCL = 5SDF 10H4503  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1163-01 Oct. 06  
page 2 of 7  
5SDF 10H4503  
Thermal  
Maximum rated values Note 1  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
Unit  
Operating junction  
temperature range  
Tvj  
0
125  
°C  
Storage temperature range Tstg  
Characteristic values  
Parameter  
-40  
125  
°C  
Symbol Conditions  
min  
max  
Unit  
Thermal resistance junction Rth(j-c)  
to case  
Double-side cooled  
Fm = 36...46 kN  
12  
K/kW  
Rth(j-c)A Anode-side cooled  
Fm = 36...46 kN  
24  
24  
3
K/kW  
K/kW  
K/kW  
K/kW  
Rth(j-c)C Cathode-side cooled  
Fm = 36...46 kN  
Thermal resistance case to Rth(c-h)  
heatsink  
Double-side cooled  
Fm = 36...46 kN  
Rth(c-h)  
Single-side cooled  
Fm = 36...46 kN  
6
Analytical function for transient thermal  
impedance:  
n
-t/ti  
Z
(t) = R (1-e )  
å
th(j-c)  
th i  
i=1  
i
1
2
3
4
Rth i(K/kW)  
7.705  
0.5244  
2.748  
0.0633  
1.009  
0.0065  
0.539  
0.0015  
ti(s)  
Fig. 1 Transient thermal impedance junction-to-case  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1163-01 Oct. 06  
page 3 of 7  
5SDF 10H4503  
Max. on-state characteristic model:  
Max. on-state characteristic model:  
= A + B ×I +C ×ln(I +1)+ D × I  
F
VF125  
= A + B ×I +C ×ln(I +1)+ D × I  
Tvj  
Tvj  
F
Tvj  
F
Tvj  
VF0  
Tvj  
Tvj  
F
Tvj  
F
Tvj  
F
Valid for IF = 300 – 30000 A  
Valid for IF = 300 – 30000 A  
A0  
B0  
347.20×10-6  
C0  
202.5×10-3  
D0  
0.00  
A125  
-1.49  
B125  
C125  
D125  
0.00  
915.50×10-3  
352.90×10-6  
561.70×10-3  
Fig. 2 Max. on-state voltage characteristics  
Fig. 3 Max. on-state voltage characteristics  
Fig. 4 Surge on-state current vs. pulse length. Half-  
Fig. 5 Surge on-state current vs. number of pulses,  
sine wave  
half-sine wave, 10 ms, 50Hz  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1163-01 Oct. 06  
page 4 of 7  
5SDF 10H4503  
Fig. 6 Upper scatter range of turn-off energy per  
Fig. 7 Upper scatter range of turn-off energy per  
pulse vs. turn-off current  
pulse vs reverse current rise rate  
Fig. 8 Upper scatter range of repetitive reverse  
Fig. 9 Upper scatter range of reverse recovery  
recovery charge vs reverse current rise rate.  
current vs reverse current rise rate  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1163-01 Oct. 06  
page 5 of 7  
5SDF 10H4503  
Fig. 10 Diode Safe Operating Area  
VF(t), IF (t)  
dIF/dt  
-dIF/dt  
IF (t)  
VFR  
IF (t)  
Qrr  
VF (t)  
VF (t)  
t
tfr  
tfr (typ) 10 µs  
VR (t)  
IRM  
Fig. 11 General current and voltage waveforms  
Li  
LCL  
DCL  
RS  
IF  
CCL  
VLC  
DUT  
LLoad  
Fig. 12 Test circuit.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1163-01 Oct. 06  
page 6 of 7  
5SDF 10H4503  
Fig. 13 Outline drawing, all dimensions are in millimeters and represent nominal values unless stated otherwise  
Related documents:  
Doc. Nr  
Titel  
5SYA 2036  
5SZK 9104  
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors  
Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please  
contact factory  
5SZK 9105  
Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on  
request, please contact factory  
Please refer to http://www.abb.com/semiconductors for actual versions.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1163-01 Oct. 06  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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