5SDF 11F2501
On-state (see Fig. 2, 3)
IFAVM
IFRMS
IFSM
Max. average on-state current
950 A
1500 A
21 kA
Half sine wave, Tc = 85°C
Max. RMS on-state current
Max. peak non-repetitive
surge current
tp
tp
tp
tp
IF
=
=
=
=
=
10 ms Before surge:
65 kA
1 ms Tc = Tj = 125°C
Max. surge current integral
A2s
A2s
10 ms
òI2dt
2.2⋅106
2.1⋅106
After surge:
1 ms
1000 A
VR ≈ 0 V
VF
VF0
rF
Forward voltage drop
Threshold voltage
Slope resistance
1.6 V
1.2 V
0.38
≤
≤
Approximation for
IF = 400…4000
Tj = 125°C
A
mΩ
Turn-on (see Fig. 4, 5)
Vfr
Peak forward recovery voltage
16 V
di/dt = 500 A/µs, Tj = 125°C
Turn-off (see Fig. 6 to 11)
Irr
Reverse recovery current
Reverse recovery charge
Turn-off energy
550 A
1200 µC
0.45 J
di/dt = 300 A/µs, IF = 700 A,
≤
≤
≤
Tj = 125°C,
VRM = 2600 V,
Qrr
Err
CS = 2µF (GTO snubber circuit)
Thermal (see Fig. 1)
Tj
Operating junction temperature range
-40...125°C
-40...125°C
40 K/kW
Tstg
RthJC
Storage temperature range
Thermal resistance junction to case
Anode side cooled
≤
≤
≤
≤
≤
40 K/kW
Cathode side cooled
Fm =
20… 24 kN
20 K/kW
Double side cooled
Single side cooled
Double side cooled
RthCH
Thermal resistance case to heatsink
10 K/kW
5 K/kW
Analytical function for transient thermal impedance.
i
1
2
3
1.63
0.01
4
2.28
0.0054
n
Z
thJC (t) =
R )
(1 - e - t /τ i
i
Ri(K/kW)
11.83
0.432
4.26
0.071
å
τi(s)
i =1
Fm = 20… 24 kN Double side cooled
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01
page 2 of 6
