5SDF 16L4503
On-state (see Fig. 3)
IFAVM
IFRMS
IFSM
Max. average on-state current
1650 A
2590 A
26 kA
Half sine wave, Tc = 70°C
Max. RMS on-state current
Max. peak non-repetitive
surge current
tp
tp
tp
tp
IF
=
=
=
=
=
10 ms Before surge:
47 kA
1 ms Tc = Tj = 125°C
Max. surge current integral
A2s
A2s
10 ms
òI2dt
3.4⋅106
1.1⋅106
After surge:
1 ms
3300 A
VR ≈ 0 V
VF
VF0
rF
Forward voltage drop
Threshold voltage
Slope resistance
4.51 V
1.9 V
0.79
≤
Approximation for
IF = 500…4000
Tj = 125°C
A
mΩ
Turn-on (see Fig. 2)
Vfr
Peak forward recovery voltage
80 V
di/dt = 600 A/µs, Tj = 125°C
≤
≤
Turn-off (see Fig. 5, 7)
di/dtcrit Max. decay rate of on-state current
600
IF = 4000 A,
Tj = 125 °C
A/µs
VDclink = 2800 V
Irr
Reverse recovery current
Reverse recovery charge
Turn-off energy
1200 A
3900 µC
9.0 J
IF = 3300 A, VDC-Link = 2800 V
di/dt = 600 A/µs, LCL = 300 nH
≤
≤
≤
Qrr
Err
C
CL = 8 µF, RCL = 0.6 Ω, Tj = 125°C
Thermal (see Fig. 1)
Tj
Operating junction temperature range
0...125°C
-40...125°C
13 K/kW
13 K/kW
6.5 K/kW
5 K/kW
Tstg
RthJC
Storage temperature range
Thermal resistance junction to case
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
≤
≤
≤
≤
≤
Fm =
36… 70 kN
RthCH
Thermal resistance case to heatsink
3 K/kW
Analytical function for transient thermal impedance.
i
1
4.05
2
1.28
3
0.62
0.01239
4
0.56
0.00300
n
Z
thJC (t) =
R )
(1 - e - t /τ i
i
Ri(K/kW)
å
0.56685 0.10686
τi(s)
i =1
Fm = 36… 70 kN Double side cooled
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1164-00 Sep. 01
page 2 of 5
