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5STB13N6500

型号：

5STB13N6500

描述：

双向晶闸管控制[ Bi-Directional Control Thyristor ]

品牌：

ABB[ THE ABB GROUP ]

页数：

7 页

PDF大小：

495 K

下载PDF手册
VSM  
IT(AV)M  
IT(RMS)  
ITSM  
VT0  
=
=
=
6500 V  
1405 A  
2205 A  
Bi-Directional Control Thyristor  
= 22×103 A  
5STB 13N6500  
=
=
1.2 V  
0.6  
rT  
mW  
Doc. No. 5SYA1035-03 May 06  
·
·
·
·
·
Two thyristors integrated into one wafer  
Patented free-floating silicon technology  
Designed for energy management and industrial applications  
Optimum power handling capability  
Interdigitated amplifying gate.  
The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)  
Blocking  
Maximum rated values Note 1  
Parameter  
Symbol Conditions  
min  
typ  
max  
6500  
Unit  
1)  
Max. surge peak blocking  
voltage  
VSM  
f = 5 Hz, tp = 10 ms  
V
1)  
Max. repetitive peak  
reverse blocking voltage  
VRM  
f = 50 Hz, tp = 10 ms  
5600  
2000  
V
Critical rate of rise of  
commutating voltage  
dv/dtcrit Exp. to 3750 V, Tvj = 125°C  
V/ms  
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
400  
Unit  
mA  
Max. leakage current  
IRM  
VRM, Tvj = 125 °C  
1) VRM is equal to VSM up to Tvj = 110 °C; de-rating of 0.11% per °C applicable for Tj below +5 °C  
Mechanical data  
Maximum rated values Note 1  
Parameter  
Symbol Conditions  
min  
81  
max  
Unit  
kN  
m/s2  
m/s2  
Mounting force  
Acceleration  
FM  
90  
108  
50  
a
a
Device unclamped  
Device clamped  
Acceleration  
100  
Characteristic values  
Parameter  
Symbol Conditions  
min  
35  
typ  
max  
Unit  
Weight  
m
2.9  
kg  
Housing thickness  
H
FM = 90 kN, Ta = 25 °C  
35.6  
mm  
mm  
mm  
Surface creepage distance DS  
Air strike distance Da  
53  
22  
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5STB 13N6500  
On-state  
Maximum rated values Note 1  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
A
Average on-state current  
RMS on-state current  
RMS on-state current  
IT(AV)M  
IT(RMS)  
IT(RMS)  
ITSM  
Half sine wave, Tc = 70 °C  
1405  
2205  
A
Full sine wave, Tc = 70 °C  
3120  
22.0×103  
A
Peak non-repetitive surge  
current  
tp = 10 ms, Tvj = 125 °C, sine wave  
after surge:  
A
VD = VR= 0 V  
Limiting load integral  
I2t  
2.42×106 A2s  
24.0×103  
Peak non-repetitive surge  
current  
ITSM  
tp = 8.3 ms, Tvj = 125 °C, sine wave  
after surge:  
A
I2t  
2.39×106 A2s  
VD = VR= 0 V  
Limiting load integral  
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
2.12  
Unit  
V
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
VT  
VT0  
rT  
IT = 1500 A, Tvj = 125 °C  
IT = 670 A - 2000 A, Tvj = 125 °C  
1.2  
0.6  
V
mW  
IH  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
300  
175  
500  
300  
mA  
mA  
mA  
mA  
Latching current  
IL  
Switching  
Maximum rated values Note 1  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Critical rate of rise of on-  
state current  
di/dtcrit  
Tvj = 125 °C,  
Cont.  
250  
A/µs  
A/µs  
µs  
ITRM = 2000 A,  
f = 50 Hz  
Cont.  
Critical rate of rise of on-  
state current  
di/dtcrit  
500  
VD £ 3750 V,  
f = 1Hz  
IFG = 2 A, tr = 0.5 µs  
Circuit commutated turn-off tq  
time  
Tvj = 125 °C, ITRM = 2000 A,  
VR = 200 V, diT/dt = -1.5 A/µs,  
800  
VD £ 0.67×VRM, dvD/dt = 20V/µs,  
Characteristic values  
Parameter  
Symbol Conditions  
min  
2400  
50  
typ  
max  
Unit  
Recovery charge  
Recovery charge  
Gate turn-on delay time  
Qrr  
IRM  
tgd  
Tvj = 125 °C, ITRM = 2000 A,  
VR = 200 V, diT/dt = -1.5 A/µs  
3800  
70  
µAs  
A
3
µs  
Tvj = 25 °C, VD = 0.4×VRM, IFG = 2 A,  
tr = 0.5 µs  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1035-03 May 06  
page 2 of 7  
5STB 13N6500  
Triggering  
Maximum rated values Note 1  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Peak forward gate voltage VFGM  
12  
10  
V
Max. rated peak forward  
gate current  
IFGM  
A
Peak reverse gate voltage VRGM  
Max. rated gate power loss PG  
10  
3
V
For DC gate current  
W
Max. rated peak forward  
gate power  
PGM  
see Fig. 9  
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Gate trigger voltage  
VGT  
IGT  
Tvj = 25 °C  
2.6  
V
Gate trigger current  
Tvj = 25 °C  
400  
mA  
V
Gate non-trigger voltage  
Gate non-trigger current  
VGD  
IGD  
VD = 0.4 x VRM, Tvj = 125 °C  
VD = 0.4 x VRM  
0.3  
10  
mA  
Thermal  
Maximum rated values Note 1  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
Unit  
Operating junction  
temperature range  
Tvj  
125  
°C  
Storage temperature range Tstg  
Characteristic values  
Parameter  
-40  
140  
°C  
Symbol Conditions  
min  
max  
Unit  
Thermal resistance junction Rth(j-c)  
to case  
Double-side cooled  
Fm = 81...108 kN  
11.4  
K/kW  
(Valid for one thyristor half  
no heat flow to the second  
half.)  
Rth(j-c)A Anode-side cooled  
Fm = 81...108 kN  
22.8  
22.8  
2
K/kW  
K/kW  
K/kW  
K/kW  
Rth(j-c)C Cathode-side cooled  
Fm = 81...108 kN  
Thermal resistance case to Rth(c-h)  
heatsink  
Double-side cooled  
Fm = 81...108 kN  
Rth(c-h)  
Single-side cooled  
Fm = 81...108 kN  
4
Analytical function for transient thermal  
impedance:  
n
Z (t) = R (1- e-t/t i )  
å
th(j-c)  
i
i=1  
i
1
2
3
4
Ri(K/kW)  
6.770  
0.8651  
2.510  
1.340  
0.0212  
0.780  
0.0075  
0.1558  
ti(s)  
Fig. 1 Transient thermal impedance junction-to case  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1035-03 May 06  
page 3 of 7  
5STB 13N6500  
On-state characteristic model:  
V
= A+B×I +C×ln(I +1)+D× I  
T max  
T
T
T
Valid for iT = 200 – 2000 A  
A
B
C
D
1.328  
257.0×10-6 -92.0×10-3  
28.0×10-3  
Fig. 2 On-state characteristics,  
Fig. 3 On-state voltage characteristics  
Tj = 125°C, 10ms half sine  
Tcase (°C)  
130  
Double-sided cooling  
125  
120  
115  
110  
105  
100  
95  
DC  
180° rectangular  
180° sine  
120° rectangular  
90  
85  
80  
75  
70  
0
500  
1000  
1500  
2000  
2500  
ITAV (A)  
Fig. 4 On-state power dissipation vs. mean on-state  
Fig. 5 Max. permissible case temperature vs. mean  
current. Switching losses excluded.  
on-state current. Switching losses ignored.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1035-03 May 06  
page 4 of 7  
5STB 13N6500  
Fig. 6 Surge on-state current vs. pulse length.  
Fig. 7 Surge on-state current vs. number of pulses.  
Half-sine wave.  
Half-sine wave, 10 ms, 50Hz.  
IG (t)  
IGM  
IGon  
» 2..5 A  
³ 1.5 IGT  
100 %  
90 %  
IGM  
diG/dt ³ 2 A/ms  
tr  
£ 1 ms  
tp(IGM  
)
» 5...20 ms  
diG/dt  
IGon  
10 %  
tr  
t
tp (IGM  
)
tp (IGon  
)
Fig. 8 Recommended gate current waveform  
Fig. 9 Max. peak gate power loss  
Fig. 10 Recovery charge vs. decay rate of on-state  
Fig. 11 Peak reverse recovery current vs. decay rate  
current  
of on-state current  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1035-03 May 06  
page 5 of 7  
5STB 13N6500  
Turn-on and Turn-off losses  
Fig. 12 Turn-on energy, half sinusoidal waves  
Fig. 13 Turn-on energy, rectangular waves  
Fig. 14 Turn-off energy, half sinusoidal waves  
Fig. 15 Turn-off energy, rectangular waves  
Total power loss for repetitive waveforms:  
Turn-off  
P
= P +Won ×f +Woff ×f  
TOT  
T
where  
1 T  
P =  
IT ×VT (IT ) dt  
T
T ò  
0
Fig. 16 Current and voltage waveforms at turn-off  
Fig. 17 Relationships for power loss  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1035-03 May 06  
page 6 of 7  
5STB 13N6500  
g
g
Fig. 18 Device Outline Drawing  
Related documents:  
5SYA 2020  
5SYA 2034  
5SYA 2036  
5SZK 9104  
Design of RC-Snubber for Phase Control Applications  
Gate-Drive Recommendations for PCT's  
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors  
Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please  
contact factory  
5SZK 9105  
Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on  
request, please contact factory  
Please refer to http://www.abb.com/semiconductors for actual versions.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1035-03 May 06  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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