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5STB17N5200

型号：

5STB17N5200

描述：

双向晶闸管控制[ Bi-Directional Control Thyristor ]

品牌：

ABB[ THE ABB GROUP ]

页数：

6 页

PDF大小：

221 K

下载PDF手册
VSM  
ITAVM  
ITRMS  
ITSM  
VT0  
=
=
=
5200 V  
1800 A  
2830 A  
Bi-Directional Control Thyristor  
5STB 17N5200  
= 29000 A  
=
=
1.02 V  
0.320  
rT  
mΩ  
Doc. No. 5SYA1036-03 Sep. 01  
• Two thyristors integrated into one wafer  
• Patented free-floating silicon technology  
• Designed for traction, energy and industrial applications  
• Optimum power handling capability  
• Interdigitated amplifying gate.  
The electrical and thermal data are valid for one thyristor half of the device.  
Blocking  
Conditions  
Part Number  
5STB 17N5200  
5STB 17N5000  
5STB 17N4600  
VSM  
VRM  
ISM  
IRM  
dV/dtcrit  
5200 V  
4400 V  
5000 V  
4200 V  
≤ 400 mA  
≤ 400 mA  
2000 V/µs  
4600 V  
4000 V  
f = 5 Hz, tp = 10ms  
f = 50 Hz,tp = 10ms  
VSM  
VRM  
@ Exp. to 0.67xVSM  
Tj = 125°C  
VRM is equal to VSM up to Tj = 110°C  
Mechanical data  
FM  
Mounting force  
nom.  
min.  
90 kN  
81 kN  
max.  
108 kN  
a
Acceleration  
Device unclamped  
Device clamped  
Weight  
50 m/s2  
100 m/s2  
2.9 kg  
m
DS  
Da  
Surface creepage distance  
Air strike distance  
53 mm  
22 mm  
ABB Semiconductors AG reserves the right to change specifications without notice.  
5STB 17N5200  
On-state  
ITAVM  
Max. average on-state  
1800 A  
2830 A  
Half sine wave, TC = 70°C  
t
ITRMS  
Max. RMS on-state current  
ITSM  
Max. peak non-repetitive  
surge current  
29000 A  
31000 A  
4205 kA2s  
3990 kA2s  
1.68 V  
tp  
tp  
tp  
tp  
IT  
=
=
=
=
=
=
10 ms T
j
= 125°C  
8.3 ms After surge:  
10 ms VD = VR = 0V  
8.3 ms  
I2t  
Limiting load integral  
VT  
VT0  
rT  
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
2000 A  
1.02 V  
IT  
1000 - 3000 A Tj = 125°C  
0.320  
mΩ  
IH  
50-250 mA  
25-150 mA  
100-500 mA  
50-300 mA  
Tj  
Tj  
Tj  
Tj  
= 25°C  
= 125°C  
= 25°C  
= 125°C  
IL  
Latching current  
Switching  
di/dtcrit Critical rate of rise of on-state  
current  
250 A/µs Cont. f = 50 Hz  
VD ≤ 0.67⋅VDRM , Tj = 125°C  
ITRM = 3000 A  
500 A/µs 60 sec.  
f = 50Hz  
IFG = 2 A, tr = 0.5 µs  
IFG = 2 A, tr = 0.5 µs  
ITRM = 3000 A, Tj = 125°C  
td  
tq  
Delay time  
3.0 µs  
≤
≤
VD = 0.4⋅VDRM  
VD ≤ 0.67⋅VDRM  
Turn-off time  
700 µs  
dvD/dt = 20V/µs VR > 200 V, diT/dt = -1.5 A/µs  
Qrr  
Recovery charge  
min  
4000 µAs  
5200 µAs  
max  
Triggering  
VGT  
IGT  
Gate trigger voltage  
Gate trigger current  
2.6 V  
Tj = 25°C  
≤
≤
≥
≥
400 mA Tj = 25°C  
VGD  
IGD  
Gate non-trigger voltage  
Gate non-trigger current  
Peak forward gate voltage  
Peak forward gate current  
Peak reverse gate voltage  
Maximum gate power loss  
0.3 V  
10 mA  
12 V  
10 A  
10 V  
3 W  
Tj = 125°C  
Tj = 125°C  
VD = 0.4⋅VRM  
VD = 0.4⋅VRM  
VFGM  
IFGM  
VRGM  
PG  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1036-03 Sep. 01  
page 2 of 6  
5STB 17N5200  
Thermal  
Tj  
Operating junction temperature range  
-40…125 °C  
-40…150 °C  
22.8 K/kW  
Tstg  
RthJC  
Storage temperature range  
Thermal resistance  
Anode side cooled  
junction to case  
22.8 K/kW  
11.4 K/kW  
4 K/kW  
Cathode side cooled  
Double side cooled  
Single side cooled  
Double side cooled  
RthCH  
Thermal resistance case to  
heat sink  
2 K/kW  
Analytical function for transient thermal  
impedance:  
ZthJC [K/kW]  
15  
10  
5
180° sine:  
add 1 K/kW  
180° rectangular: add 1 K/kW  
120° rectangular: add 1 K/kW  
60° rectangular: add 2 K/kW  
n
(t) = åR  
ZthJC  
i
(1-e-t/τ i )  
i=1  
Fm = 81..108 kN  
Double-side cooling  
i
1
2
3
4
0
Ri(K/kW)  
6.77  
2.51  
1.34  
0.78  
0.001  
0.010  
0.100  
1.000  
10.000  
t [s]  
0.8651  
0.1558  
0.0212  
0.0075  
τi(s)  
Fig. 1 Transient thermal impedance junction to case.  
On-state characteristic model:  
VT = A+ B⋅iT +C⋅ln(iT +1)+ D⋅ IT  
Valid for iT = 500 – 4000 A  
A
B
C
D
1.309  
0.00008  
-0.125  
0.026  
Fig. 2 On-state characteristics.  
Fig. 3 On-state characteristics.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1036-03 Sep. 01  
page 3 of 6  
5STB 17N5200  
Tcase (°C)  
130  
Double-sided cooling  
125  
120  
115  
110  
105  
100  
95  
DC  
180° rectangular  
180° sine  
120° rectangular  
90  
85  
80  
75  
70  
0
500  
1000  
1500  
2000  
2500  
3000  
IT
A
V
(A)  
Fig. 4 On-state power dissipation vs. mean on-  
state current. Turn - on losses excluded.  
Fig. 5 Max. permissible case temperature vs.  
mean on-state current.  
Fig. 6 Surge on-state current vs. pulse length.  
Half-sine wave.  
Fig. 7 Surge on-state current vs. number of  
pulses. Half-sine wave, 10 ms, 50Hz.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1036-03 Sep. 01  
page 4 of 6  
5STB 17N5200  
Fig. 8 Gate trigger characteristics.  
Fig. 9 Max. peak gate power loss.  
Q
rr(µAs)  
( )  
RM A  
I
103  
30000  
20000  
800  
700  
ITRM = 3000 A  
Tj = Tjmax  
ITRM = 3000 A  
Tj = Tjmax  
600  
500  
400  
300  
104  
8000  
7000  
200  
6000  
102  
5000  
80  
70  
4000  
3000  
60  
20001  
2
3
4
5
6
7
8 910  
20  
30  
30  
30  
-diT/dt (A/µs)  
1
2
3
4
5
6
7
8 910  
20  
-diT/dt (A/µs)  
Fig. 10 Recovery charge vs. decay rate of on-  
state current.  
Fig. 11 Peak reverse recovery current vs. decay  
rate of on-state current.  
Turn - off time, typical parameter relationship.  
f2 (-diT /dt)  
1.3  
1.2  
1.1  
1.0  
0
4
8
12 16 20 24 28 32  
di /dt (A/µs)  
-
T
Fig. 12 tq/tq1 = f1(Tj)  
Fig. 13 tq/tq1 = f2(-diT/dt)  
Fig. 14 tq/tq1 = f3(dv/dt)  
tq1 :at normalized values (see page 2)  
tq : at varying conditions  
tq = tq1 • f1(Tj) • f2(-diT/dt) • f3(dv/dt)  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1036-03 Sep. 01  
page 5 of 6  
5STB 17N5200  
Turn-on and Turn-off losses  
Won (Ws/pulse)  
3.0  
W
(Ws/pulse)  
on  
5
di/dt = 10 A/µs  
tp  
tp  
tp  
=
=
=
1 ms  
2 ms  
5 ms  
di/dt = 5 A/µs  
di/dt = 2 A/µs  
di/dt = 1 A/µs  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4
3
2
1
0
tp = 10 ms  
0
1
2
3
4
5
6
8
7 IT (kA)  
0
1
2
3
4
5
6
8
7 IT (kA)  
Fig. 15Won = f(IT, tP), Tj = 125 °C.  
Half sinusoidal waves.  
Fig. 16Won = f(IT, di/dt), Tj = 125 °C.  
Rectangular waves.  
W
(Ws/pulse)  
W
off (Ws/pulse)  
off  
18  
10  
9
8
7
6
5
4
3
2
1
0
di/dt = 10 A/µs  
di/dt = 5 A/µs  
di/dt = 2 A/µs  
di/dt = 1 A/µs  
16  
14  
12  
10  
8
ITRM = 8000 A  
I
I
TRM = 6000 A  
TRM = 4000 A  
6
4
2
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
V0 (kV)  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
V0 (kV)  
Fig. 17Woff = f(V0, IT), Tj = 125 °C.  
Half sinusoidal waves. tP = 10 ms.  
Fig. 18Woff = f(V0,di/dt), Tj = 125 °C.  
Rectangular waves.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
ABB Semiconductors AG  
Fabrikstrasse 3  
Doc. No. 5SYA1036-03 Sep. 01  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)62 888 6419  
Fax  
+41 (0)62 888 6306  
abbsem@ch.abb.com  
www.abbsem.com  
Email  
Internet  
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