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5STB25U5200

型号：

5STB25U5200

描述：

双向控制ThyristorBi定向控制晶闸管[ Bi-Directional Control ThyristorBi-Directional Control Thyristor ]

品牌：

ABB[ THE ABB GROUP ]

页数：

6 页

PDF大小：

437 K

下载PDF手册
VSM  
IT(AV)M  
IT(RMS)  
ITSM  
VT0  
=
=
=
5200 V  
1980 A  
3100 A  
Bi-Directional Control Thyristor  
= 42×10 A  
=
=
5STB 25U5200  
1.06 V  
0.219  
Preliminary  
rT  
mΩ  
Doc. No. 5SYA1038-02 Jul. 03  
• Two thyristors integrated into one wafer  
• Patented free-floating silicon technology  
• Designed for energy and industrial applications  
• Optimum power handling capability  
• Interdigitated amplifying gate.  
The electrical and thermal data are valid for one thyristor half of the device.  
Blocking  
Maximum rated values 1)  
Symbol  
VSM  
Conditions  
5STB 25U5200 5STB 25U5000 5STB 25U4600  
f = 5 Hz, tp = 10 ms  
f = 50 Hz, tp = 10 ms  
Exp. to 0.67 x VRM, Tvj = 110°C  
5200 V  
4400 V  
5000 V  
4200 V  
4600 V  
4000 V  
VRM  
dV/dtcrit  
2000 V/µs  
Characteristic values  
Parameter  
Symbol Conditions  
IRM VRM, Tvj = 110°C  
min  
typ  
max  
400  
Unit  
mA  
Max. leakage current  
VRM is equal to the VSM value up to Tj = 95 °C  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
min  
typ  
max  
160  
Unit  
kN  
m/s2  
m/s2  
Mounting force  
Acceleration  
FM  
a
120  
135  
Device unclamped  
Device clamped  
50  
Acceleration  
Characteristic values  
Parameter  
a
100  
Symbol Conditions  
typ  
max  
3.6  
Unit  
Weight  
m
kg  
Surface creepage distance DS  
Air strike distance Da  
1) Maximum rated values indicate limits beyond which damage to the device may occur  
53  
mm  
mm  
22  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5STB 25U5200  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
A
Average on-state current  
IT(AV)M  
IT(RMS)  
ITSM  
Half sine wave, Tc = 70°C  
1980  
RMS on-state current  
3100  
42.0×103  
A
Peak non-repetitive surge  
current  
tp = 10 ms, Tvj = 110 °C,  
A
VD = VR = 0 V  
Limiting load integral  
I2t  
8.82×106 A2s  
45.0×103  
Peak non-repetitive surge  
current  
ITSM  
tp = 8.3 ms, Tvj = 110 °C,  
A
VD = VR = 0 V  
Limiting load integral  
Characteristic values  
Parameter  
I2t  
8.40×106 A2s  
Symbol Conditions  
min  
typ  
max  
1.7  
Unit  
V
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
VT  
VT0  
rT  
IT = 3000 A, Tvj = 110 °C  
IT = 1300 A - 4000 A, Tvj= 110 °C  
1.06  
0.219  
125  
70  
V
mΩ  
mA  
mA  
mA  
mA  
IH  
Tvj = 25 °C  
Tvj = 110 °C  
Tvj = 25 °C  
Tvj = 110 °C  
Latching current  
IL  
900  
700  
Switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Critical rate of rise of on-  
state current  
di/dtcrit  
Tvj = 110 °C,  
TRM = 3000 A,  
VD ≤ 0.67 VRM  
FG = A, tr = 0.5 µs  
Tvj = 110°C, ITRM = 2000 A,  
Cont.  
250  
A/µs  
A/µs  
µs  
I
f = 50 Hz  
Cont.  
Critical rate of rise of on-  
state current  
di/dtcrit  
1000  
,
f = 1Hz  
I
Circuit commutated turn-off tq  
time  
800  
VR = 200 V, diT/dt = -1.5 A/µs,  
VD ≤ 0.67⋅VRM, dvD/dt = 20V/µs,  
Characteristic values  
Parameter  
Symbol Conditions  
min  
3600  
typ  
max  
Unit  
Recovery charge  
Qrr  
Tvj = 110°C, ITRM = 2000 A,  
VR = 200 V,  
4600  
µAs  
diT/dt = -1.5 A/µs  
Delay time  
td  
3
µs  
VD = 0.4⋅VRM, IFG = 2 A, tr = 0.5 µs  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1038-02 Jul. 03  
page 2 of 6  
5STB 25U5200  
Triggering  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Peak forward gate voltage VFGM  
12  
10  
V
Max. rated peak forward  
gate current  
IFGM  
A
Peak reverse gate voltage VRGM  
Max. rated gate power loss PG  
10  
3
V
For DC gate current  
W
Max. rated peak forward  
gate power  
PGM  
see Fig. 9  
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Gate trigger voltage  
VGT  
IGT  
Tvj = 25 °C  
2.6  
V
Gate trigger current  
Tvj = 25 °C  
400  
mA  
V
Gate non-trigger voltage  
Gate non-trigger current  
VGD  
IGD  
VD = 0.4 x VRM, Tvjmax = 110 °C  
VD = 0.4 x VRM  
0.3  
10  
mA  
Thermal  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
Unit  
Operating junction  
temperature range  
Tvj  
110  
°C  
Storage temperature range Tstg  
Characteristic values  
Parameter  
-40  
140  
°C  
Symbol Conditions  
min  
max  
Unit  
Thermal resistance junction Rth(j-c)  
to case  
Double-side cooled  
8.5  
K/kW  
Rth(j-c)A Anode-side cooled  
Rth(j-c)C Cathode-side cooled  
17  
17  
K/kW  
K/kW  
K/kW  
Thermal resistance case to Rth(c-h)  
heatsink  
Double-side cooled  
1.6  
Rth(c-h)  
Single-side cooled  
3.2  
K/kW  
Analytical function for transient thermal  
impedance:  
n
-t/τ  
i
Zth(j - c)(t) = Ri(1- e  
)
∑
i=1  
i
1
2
3
4
Ri(K/kW)  
τi(s)  
5.748  
0.9531  
1.731  
0.1240  
0.688  
0.333  
0.0144  
0.0031  
Fig. 1 Transient thermal impedance junction-to case.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1038-02 Jul. 03  
page 3 of 6  
5STB 25U5200  
Max. on-state characteristic model:  
Max. on-state characteristic model:  
VT110  
VT25  
= A +B ⋅IT +CTvj ⋅ln(IT +1)+D ⋅ IT  
= A + BTvj ⋅IT +CTvj ⋅ln(IT +1)+ D ⋅ IT  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Valid for IT = 500 – 80000 A  
Valid for IT = 500 – 80000 A  
A25  
B25  
C25  
D25  
A110  
B110 C110  
D110  
200.70×10-6 116.90×10-6 176.4×10-3 -2.52×10-3  
157.10×10-6 145.60×10-6 155.60×10-3 -27.48×10-6  
Fig. 2 Max. on-state voltage characteristics  
Fig. 3 Max. on-state voltage characteristics  
Fig. 4 On-state power dissipation vs. mean on-state  
Fig. 5 Max. permissible case temperature vs. mean  
current. Turn - on losses excluded.  
on-state current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1038-02 Jul. 03  
page 4 of 6  
5STB 25U5200  
Fig. 6 Surge on-state current vs. pulse length. Half-  
Fig. 7 Surge on-state current vs. number of pulses.  
sine wave.  
Half-sine wave, 10 ms, 50Hz.  
IG (t)  
IGM  
IGon  
≈ 2..5 A  
≥ 1.5 IGT  
100 %  
90 %  
IGM  
diG/dt ≥ 2 A/µs  
tr  
tp(IGM  
≤ 1 µs  
≈ 5...20 µs  
)
diG/dt  
IGon  
10 %  
tr  
t
tp (IGM  
)
tp (IGon  
)
Fig. 8 Recommended gate current waveform.  
Fig. 9 Max. peak gate power loss.  
Fig. 10 Recovery charge vs. decay rate of on-state  
Fig. 11 Peak reverse recovery current vs. decay rate  
current.  
of on-state current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1038-02 Jul. 03  
page 5 of 6  
5STB 25U5200  
Fig. 12 Device Outline Drawing.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1038-02 Jul. 03  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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